Study on multiple-color emission mechanism and device application of InGaN nanocolumns

• Project/Area Number: 18310079
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: Sophia University
• Principal Investigator: KIKUCHI Akihiko Sophia University, 理工学部, 准教授 (90266073)
• Co-Investigator(Kenkyū-buntansha): NOMURA Ichirou 上智大学, 理工学部, 講師 (00266074) ; KISHINO Katsumi 上智大学, 理工学部, 教授 (90134824)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥17,900,000 (Direct Cost: ¥15,500,000、Indirect Cost: ¥2,400,000); Fiscal Year 2008: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2007: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000); Fiscal Year 2006: ¥7,500,000 (Direct Cost: ¥7,500,000)
• Keywords: ナノコラム / 発光ダイオード / ナノデバイス / 量子井戸 / 半導体超微細化 / ナノ結晶 / 光源技術 / 窒化物半導体 / 分子線エピタキシー

Research Abstract

InGaN/GaN多重量子井戸を発光層とする自己形成型GaNナノコラム結晶における多色発光現象の発現機構を説明する有力なモデルを構築した。デバイス応用技術として金属膜上フレキシブルナノコラムLEDを作製し室温赤色発光を得た。また、Tiマスクによるナノ結晶の位置・形状制御技術、ナノコラム径による青色から赤色までの発光色制御技術、なよび新しい機能性ナノ結晶であるGaNナノウォールを降開発した。

Research Products

• [Journal Article] Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays (2009)
  • Author(s): K. Kishino, H. Sekiguchi, A. Kikuchi
  • Journal Title: Journal of Crystal Growth 311 Pages: 2063-2068
• [Journal Article] Improved Ti-mask selective-area growth (SAG)by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays (2009)
  • Author(s): K. Kishino, H. Sekiguchi, A. Kikuchi
  • Journal Title: Journal of Crystal Growth 311 Pages: 2063-2068
  • Peer Reviewed
• [Journal Article] Ti-mask selective-area growth of GaN by RF-plasma-assisted molecular-beam epitaxy for fabricating regularly arranged InGaN/GaN nanocolumns (2008)
  • Author(s): H. Sekiguchi, K. Kishino, A. Kikuchi
  • Journal Title: Applied Physics Express 1 No. 12 Pages: 124002-124002
  • NAID: 10025083819
• [Journal Article] Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma assisted molecular-beam epitaxy (2008)
  • Author(s): K. Kishino, T. Hoshino, S. Ishizawa, A. Kikuchi
  • Journal Title: Electronics Lett 44-No 13 Pages: 819-821
• [Journal Article] GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111)Si by RF-plasma-assisted molecular beam epitaxy (2008)
  • Author(s): H. Sekiguchi, K. Kishino, A. Kikuchi
  • Journal Title: Electronics Letters 44 Pages: 151-152
  • Peer Reviewed
• [Journal Article] Selective-area growth of GaN nanocolumns on titanium-mask-patternedsilicon (111)substrates by RF-plasma-assisted molecular beam epitaxy (2008)
  • Author(s): K. Kishino, T. Hoshino, S. Ishizawa, A. Kikuchi
  • Journal Title: Electronics Letters 44 Pages: 819-821
  • Peer Reviewed
• [Journal Article] Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111)Si substrates by rf-plasma-assisted molecular beam epitaxy (2008)
  • Author(s): H. Sekiguchi, K. Kato, J. Tanaka, A. Kikuchi, K. Kishino
  • Journal Title: physica status solidi (a) 205 Pages: 1067-1069
  • Peer Reviewed
• [Journal Article] Selective growth of GaN nanocolumns on predeposited Al patterns byrf-plasma-assisted molecular-beam epitaxy (2008)
  • Author(s): S. Ishizawa, A. Kikuchi, K. Kishino
  • Journal Title: physica status solidi (c) 5 Pages: 1879-1882
  • Peer Reviewed
• [Journal Article] Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy (2008)
  • Author(s): H. Sekiguchi, K. Kato, A. Kikuchi, K. Kishino
  • Journal Title: physica status solidi (c) 5 Pages: 3069-3072
  • Peer Reviewed
• [Journal Article] Ti-mask selective-area growth of GaN by RF-plasma-assisted molecular-beam epitaxy for fabricating regularly arranged InGaN/GaN nanocolumns (2008)
  • Author(s): H. Sekiguchi, K. Kishino, A. Kikuchi
  • Journal Title: Applied Physics Express 1 Pages: 124002-124002
  • NAID: 10025083819
  • Peer Reviewed
• [Journal Article] GaN/AIGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy (2008)
  • Author(s): H. Sekiguchi, A. Kikuchi, K. Kishino
  • Journal Title: ElectronicsLetters 44 Pages: 151-152
  • Peer Reviewed
• [Journal Article] Photoluminescence of exciton and biexciton in GaN nanocolumns (2008)
  • Author(s): K. Kouyama, M. Inoue, Y. Inose, N. Suzuki, H. Sekiguchi, H. Kunugita, K. Ema, A. Kikuchi, K. Kishino
  • Journal Title: Journal of Luminescence 128 Pages: 10841086-10841086
  • Peer Reviewed
• [Journal Article] Ultrafast intersubband relaxation dynamics at 1.55ロm in GaN/AIN multiple quantum disk nanocolumns (2008)
  • Author(s): K. Tanaka, K. lkuno, Y. Kasai, K. Fukunaga, H. Kunugita, K. Ema, A. Kikuchi, K. Kishino
  • Journal Title: Journal of Luminescence 128 Pages: 1084-1086
  • Peer Reviewed
• [Journal Article] Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy (2007)
  • Author(s): H. Sekiguchi, T. Nakazato, A. Kikuchi, K. Kishino
  • Journal Title: Journal of Crystal Growth 300(1) Pages: 259-262
• [Journal Article] Structural and optical properties of GaN nanocolumns grown on(0001)sapphire substrates by rf-plasma-assisted molecular-beam epitaxy (2007)
  • Author(s): H. Sekiguchi, T. Nakazato, A. Kikuchi, K. Kishino
  • Journal Title: Journal of Crystal Growth 300 Pages: 259-262
  • Peer Reviewed
• [Journal Article] Raman Scattering in GaN/NIN Multiple Quantum Disk Nanocolumns (2007)
  • Author(s): T. Sekine, S. Suzuki, M. Tada, T. Nakazato, A. Kikuchi, K. Kishino
  • Journal Title: Proceedings of 28th International Conference on the Physics of Semicounductors 898 Pages: 867-868
• [Journal Article] Growth of high-In-content InAIN nanocolumns on Si (111) by RF-plasma-assisted molecular-beam epitaxy (2007)
  • Author(s): J. Kamimura, T. Kouno, S. Ishizawa, A. Kikuchi, K. Kishino
  • Journal Title: Journal of Crystal Growth 300 Pages: 160-163
  • Peer Reviewed
• [Journal Article] InN/lnAIN Multiple Quantum Well Nanocolumns Grown on (111)Si substrates by RF-Plasma Assisted Molecular Beam Epitaxy (2007)
  • Author(s): K. Kishino, J. Kamimura, A. Kikuchiand P. Holmstrom
  • Journal Title: State-of-the-Art Program on Composed Semiconductors 46 (SOTAPOCS46)-and-Processes at the Semiconductor/Solution Interface 2 6 Pages: 205-210
• [Journal Article] Selective growth of GaN nanocolumns by Al thin layer on substrate (2007)
  • Author(s): S. Ishizawa, H. Sekiguchi, A. Kikuchiand K. Kishino
  • Journal Title: physica stat solidi (b) 244 Pages: 1815-1819
  • Peer Reviewed
• [Journal Article] Selective-Area Growth GaN Nanocolumns on Si (111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy (2007)
  • Author(s): S. Ishizawa, K. Kishino, A. Kikuchi
  • Journal Title: Applied physics Express 1 Pages: 15006-15006
  • NAID: 10024292701
  • Peer Reviewed
• [Journal Article] Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns (2007)
  • Author(s): T.Sekine, S.Suzuki, M.Tada, T.Nakazato, A.Kikuchi, K.Kishino
  • Journal Title: AIP Conference Proceedings, Phisics of Semiconductors : 28th International Conference on the Physics of Semiconductors 893 Pages: 867-868
• [Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nancolumns (2007)
  • Author(s): Y.Kawakami, S.Suzuki, A.Kaneta, M.Funamoto, A.Kikuchi, K.Kishino
  • Journal Title: Applied Physics Letters 89
• [Journal Article] Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy (2007)
  • Author(s): H.Sekiguchi, T.Nakazato, A.Kikuchi, K.Kishino
  • Journal Title: Journal of Crystal Growth 300 Pages: 259-262
• [Journal Article] Growth of high-In-content InAlN nanocolumns on Si (111) by RF-plasma-assisted molecular-beam epitaxy (2007)
  • Author(s): J.Kamimura, T.Kouno, S.Ishizawa, A.Kikuchi, K.Kishino
  • Journal Title: Journal of Crystal Growth Accepted for publication
• [Journal Article] Selective growth of GaN nanocolumns by Al thin layer on substrate (2007)
  • Author(s): S.Ishizawa, H.Sekiguchi, A.Kikuchi, K.Kishino
  • Journal Title: physica status solidi (b) Accepted for publication
• [Journal Article] Origin of high oscillator strength in green-emitting InGaN/GaN nancolumns (2006)
  • Author(s): Y. Kawakami, S. Suzuki, A. Kaneta, M. Funamoto, A. Kikuchi, K. Kishino
  • Journal Title: Applied Physics Letters 89
• [Journal Article] InGaN/GaN nanocolumn LEDs emitting from blue to red (2006)
  • Author(s): K.Kishino, A.Kikuchi, H.Sekiguchi, S.Ishizawa
  • Journal Title: Proceedings of SPIE 6473
• [Presentation] RF-MBE法を用いた選択成長によるGaNヘキサゴナル・ナノリング構造の成長と光学特性 (2009)
  • Author(s): 光野徹也, 岸野克巳, 菊池昭彦
  • Organizer: 第56回応用物理関係連合講演会
  • Place of Presentation: 茨城県
• [Presentation] RF-MBE法・規則配列GaNナノコラム成長におけるInGaN量子ドット構造の形成 (2009)
  • Author(s): 関口寛人, 岸野克巳, 田中譲, 菊池昭彦
  • Organizer: 第56回応用物理関係連合講演会
  • Place of Presentation: 茨城県
• [Presentation] Intersubband photonic devices by III-V nitrides (2008)
  • Author(s): P. Holmstrom, X. Y. Liu, G. Kobayashi, T. Aggerstam, A. Kikuchi, K. Kishino, S. Lourdudoss, T. G. Andersson, L. Thylen
  • Organizer: SPIE Asia-Pacific Optical Communications (APOC)2008
  • Place of Presentation: Wuhan, China
  • Year and Date: 2008-11-15
• [Presentation] Emission-color control of well-arranged GaN nanocolumns on the same substrate by changing the nanocolumn size and period (2008)
  • Author(s): H. Sekiguchi, K. Kishino, A. Kikuchi
  • Organizer: IEEE Nanotchnology Materials and Devices Conference 2008 (NMDC2008), TuC II-3, Kyoto, Japan
• [Presentation] GaN nanowalls with InGaN quantum wells grown by Ti-mask selective area RF-plasma assisted molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: International Workshop on Nitride Semiconductors (IWN2008), We3-B-3, Montreux, Switzerland
• [Presentation] Structural characterization of GaN nanowalls grown by Ti-mask selective area growth of molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: 35th International Symposium on Compound Semiconductors (iscs2008), Mo 3.4, the Europa-Park Rust near Freiburg, Germany,
• [Presentation] Growth of InGaN/GaN-based hexagonal nano-plate on GaN nanocolumn (nano-parasol) by molecular beam epitaxy using strong anisotropic growth technique (2008)
  • Author(s): A. Kikuchi, H. Sekiguchi, K. Kishino
  • Organizer: 15th International Conference on Molecular Beam Epitaxy (MBE2008), WB2.5, Vancouver, Canada
• [Presentation] Growth and characterization of GaN based nanowalls (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: Second International Symposium on Growth of III-Nitrides (ISGN-2), I-Tu-4, Izu, Japan
  • Place of Presentation: Invited
• [Presentation] Ti-mask selective area growth of GaN nanowalls by rf-plasma assisted molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: International Symposium on Semiconductor Light Emitting Devices (ISSLED-2008), Ol, Phoenix, Arizona, USA
  • Place of Presentation: Invited
• [Presentation] Selective growth of GaN nanowalls with InGaN quantum well by RF-plasma assisted molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino, S. Ishizawa, H. Sekiguchi
  • Organizer: 2008 SPIE Photonics West, Gallium Nitride Materials and Devices III, 6894-04, San Jose, CA, USA
• [Presentation] ナノコラム径及び周期による同一基板上規則配列InGaN/GaNナノコラムの発光色制御 (2008)
  • Author(s): 関口寛人, 岸野克巳, 菊池昭彦
  • Organizer: 第69回応用物理学会学術講演会、5a-CA-10
  • Place of Presentation: 愛知県
• [Presentation] Selective area growth of GaN nanocolumns on Si(111)and GaN(0001)surfaces with Al and Ti nanopatterns by rf-plasma assisted MBE (Invited) (2008)
  • Author(s): K. Kishino, A. Kikuchi, S. Ishizawa, H. Sekiguchi, T. Hoshino
  • Organizer: 7^<th> International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces'(ESPS-NIS)
  • Place of Presentation: Phoenix, Arizona, USA
• [Presentation] Ti-mask selective area growth of GaN nanowalls by rf-plasma assisted molecular beam epitaxy (Invited) (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: International Symposium on Semiconductor Light Emitting Devices (ISSLED-2008)
  • Place of Presentation: Phoenix, Arizona, USA
• [Presentation] Position control of GaN nanocolumns by selective area growth on patterned substrates (Invited) (2008)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S, Ishizawa
  • Organizer: MBE Taiwan 2008
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] InGaAlN-based nanocolumns and related optical nanodevices (Invited) (2008)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa
  • Organizer: Japan Brazil Memorial Symposium on Science & Technology
  • Place of Presentation: Sao Paulo, Brazil
• [Presentation] Growth and characterization of GaN based nanowalls (Invited) (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: Second International Symposium on Growth of III-Nitrides(ISGN-2)
  • Place of Presentation: Izu, Japan
• [Presentation] Nanocolumn GaN LEDs covering full visible colors and related growth technology (Invited) (2008)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa
  • Organizer: Asia-Pacific Optical Communications
  • Place of Presentation: Hangzhou, China
• [Presentation] Well-arranged InGaN/GaN nanocolumns on GaN template with Ti-nanoholes grown by rf-plasma-assisted molecular-beam epitaxy (2008)
  • Author(s): H. Sekiguchi, J. Tanaka, A. Kikuchi, K. Kishino
  • Organizer: International Symposium on Semiconductor Light Emitting Devices(ISSLED-2008)
  • Place of Presentation: Phoenix, Arizona, USA
• [Presentation] Improved Ti-mask selective-area-growth (SAG) by rf-MBE demonstrating extremely uniform GaN nanocolumn arrays (2008)
  • Author(s): K. Kishino, H. Sekiguchi, A. Kikuchi
  • Organizer: 15th International Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Vancouver, Canada
• [Presentation] Growth of InGaN/GaN-based hexagonal nano-plate on GaN nanocolumn (nano-parasol)by molecular beam epitaxy using strong anisotropic growth technique (2008)
  • Author(s): A. Kikuchi, H. Sekiguchi, K. Kishino
  • Organizer: 15th International Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Vancouver, Canada
• [Presentation] Structural characterization of GaN nanowalls grown by Ti-mask selective area growth of molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: 35th International Symposium on Compound Semiconductors (iscs2008)
  • Place of Presentation: the Europa-Park Rust near Freiburg, Germany
• [Presentation] Optical properties of amber-emission InGaN/GaN single quantum disk nanocolumns (2008)
  • Author(s): J. Tanaka, K. Kishino, H. Sekiguchi, A. Kikuchi
  • Organizer: 35th International Symposium on Compound Semiconductors (iscs2008)
  • Place of Presentation: the Europa-Park Rust near Freiburg, Germany
• [Presentation] GaN nanowalls with InGaN quantum wells grown by Ti-mask selective area RF-plasma assisted molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino
  • Organizer: International Workshop on Nitride Semiconductors (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] High optical efficiency well-arranged InGaN/GaN nanocolumns grown by selective area growth of rf-plasma-assisted molecular-beam epitaxy (2008)
  • Author(s): H. Sekiguchi, K. Kishino, J. Tanaka, A. Kikuchi
  • Organizer: International Workshop on Nitride Semiconductors (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] Emission-color control of well-arranged GaN nanocolumns on the same substrate by changing the nanocolumn size and period (2008)
  • Author(s): H. Sekiguchi, K. Kishino, A. Kikuchi
  • Organizer: IEEE Nanotchnology Materials and Devices Conference 2008 (NMDC2008)
  • Place of Presentation: Kyoto, Japan
• [Presentation] Effect of growth condition on well arranged InGaN/GaN nanocolumns grown by selective area growth of rf-plasma assisted molecular beam epitaxy (2008)
  • Author(s): H. Sekiguchi, K. Kishino, A. Kikuchi
  • Organizer: International Conference on on Solid State Devices and Materials (SSDM 2008)
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Emission characteristics of InGaN-based nanocolumn arrays grown by rf-plasma assisted molecular beam epitaxy (2008)
  • Author(s): K. Kishino, H. Sekiguchi, A. Kikuchi
  • Organizer: MRS fall meeting, Symposium LL : Nanowires-Synthesis
  • Place of Presentation: Boston, U.S.A.
• [Presentation] ナノ加工によるRF-MBE成長InGaN/GaN量子井戸の歪緩和効果 (2008)
  • Author(s): バディヴェルラメシユ, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] n-(111)Si基板上InGaN/GaN量子ディスクナノコラムLEDのAu膜への転写プロセス (2008)
  • Author(s): 坂本晃輝, 関口寛人, 加藤圭, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE法を用いたTiマスクによるGaNナノコラム選択成長の成長条件依存性 (2008)
  • Author(s): 関口寛人, 岸野克巳, 菊池昭彦
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] AINバッファ層を用いたn型(111)Si基板上GaNナノコラムの成長 (2008)
  • Author(s): 長島和哉, 関口寛人, 加藤圭, 光野徹也, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] GaN連続膜上AlN/GaN DBR構造ナノコラムの選択成長 (2008)
  • Author(s): 杉本修一, 石沢峻介1, 関口寛人, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE法によるGaNテンプレート上AINパターンを用いたGaNナノコラムの選択成長 (2008)
  • Author(s): 田邊雄一郎, 石沢峻介, 岸野克巳, 菊池昭彦
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE法によるSi基板上AINパターンを用いたGaNナノコラムの選択成長 (2008)
  • Author(s): 石沢峻介, 岸野克巳, 山野晃司, 菊池昭彦
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE法を用いたTiマスクによるGaNナノコラム選択性の窒素流量依存性 (2008)
  • Author(s): 木下萌, 関口寛人, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] ナノコラム径及び周期による同一基板上規則配列InGaN/GaNナノコラムの発光色制御 (2008)
  • Author(s): 関口寛人, 岸野克巳, 菊池昭彦
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] n型(111)Si基板上BeドープGaNナノコラムバッファ層上GaN結晶の成長 (2008)
  • Author(s): 加藤圭, 関口寛人, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] 規則配列InGaN/GaN量子デイスクナノコラムの光学特性評価 (2008)
  • Author(s): 田中譲, 関口寛人, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE法を用いたGaNナノウォールのTiマスク選択成長と構造制御 (2008)
  • Author(s): 星野隼之, 菊池昭彦, 岸野克巳
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE 法を用いた選択領域成長によるGaN リング構造の成長 (2008)
  • Author(s): 光野徹也, 岸野克巳, 関口寛人, 菊池昭彦
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県
• [Presentation] RF-MBE法を用いたTiマスク選択成長法による規則配列InGaN/GaNナノコラムの作製 (2008)
  • Author(s): 関口寛人, 岸野克巳, 菊池昭彦
  • Organizer: 電子情報通信学会、LQE研究会
  • Place of Presentation: 名古屋工業大学
• [Presentation] Overgrowth of GaN on GaN nanocolumns with Be doped coalescing layer by RF-plasma assisted molecular beam epitaxy (2008)
  • Author(s): K. Kato, H. Sekiguchi, A. Kikuchi, K. Kishino
  • Organizer: Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Izu, Japan
• [Presentation] Micro-EL characteristics of InGaN/GaN nanocolumn LEDs (2008)
  • Author(s): H. Sekiguchi, K. Kishino, K. Kato, A. Kikuchi
  • Organizer: Second International Symposium on Growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Izu, Japan
• [Presentation] Light localization in random distributed InGaN/GaN quantum disk nanocolumns (2008)
  • Author(s): M. Sakai, T. Ohtsuki, Y. Inose, K. Ema, A. Kikuchi, K. Kishino
  • Organizer: 29th International Conference on the Physics of Semiconductors (ICPS2008)
  • Place of Presentation: Rio de Janeiro, Brazil
• [Presentation] Ti-mask selective area growth of GaN ring-structures by RF-plasma as sisted molecular beam epitaxy (2008)
  • Author(s): T. Kouno, K. Kishino, H. Sekiguchi, A. Kikuchi
  • Organizer: International Workshop on Nitride Semiconductors (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] Champaigne-glass type (Al)InGaN-based nanocolumn LEDs emitting from ultraviolet to red (2008)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa
  • Organizer: 2008 SPIE Photonics West, Light-Emitting Diodes: Research, Manufacturing, and Applications XII
  • Place of Presentation: San Jose, CA, USA
• [Presentation] InGaN/AIGaN nanocolumn LEDs and related nanocohu growth technoionlogy (2008)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa
  • Organizer: 2008 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices
  • Place of Presentation: Hokkaido, Japan
• [Presentation] Selective growth of GaN nanowalls with InGaN quantum well by RF-plasma assisted molecular beam epitaxy (2008)
  • Author(s): A. Kikuchi, K. Kishino, T. Hoshino, S. lshizawa, H. Sekiguchi
  • Organizer: 2008 SPIE Photonics West, Gallium Nitride Materials and Devices III
  • Place of Presentation: San Jose, CA, USA
• [Presentation] Selective area growth of GaN nanocolumns by rf-plasma assisted molecular-beam epitaxy (2008)
  • Author(s): K. Kishino, A. Kikuchi, S. Ishizawa, H. Sekiguchi, T. Hoshino
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices-2008 German-Japanese-Spanish Joint Workshop
  • Place of Presentation: Hakone, Japan
• [Presentation] GaNナノコラム結晶のプラズモンによるラマン散乱II (2008)
  • Author(s): 村本 浩介, 黒江 晴彦, 関根 智幸, 関口 寛人, 菊池 昭彦, 岸野 克己
  • Organizer: 日本物理学会第63回年次大会
  • Place of Presentation: 大阪府
• [Presentation] GaNナノコラム結晶の発光特性 (2008)
  • Author(s): 幸山 和晃, 井上 昌弥, 猪瀬 裕太, 鈴木 直樹, 欅田 英之, 江馬 一弘, 関口 寛人, 菊池 昭彦, 岸野 克巳
  • Organizer: 日本物理学会第63回年次大会
  • Place of Presentation: 大阪府
• [Presentation] BeドープGaNナノコラムLED;結晶の評価 (2008)
  • Author(s): 加藤 圭, 関口 寛人, 菊池 昭彦, 岸野 克巳
  • Organizer: 第55回応用物理関係連合講演会
  • Place of Presentation: 千葉県
• [Presentation] Tiマスク選択領域成長(SAG)を用いたGaNナノウォールのRF-MBE成長 (2008)
  • Author(s): 菊池 昭彦, 岸野 克巳
  • Organizer: 第55回応用物理関係連合講演会
  • Place of Presentation: 千葉県
• [Presentation] Tiナノホールパターンを用いたGaN連続膜上規則配列InGaN!GaNナノコラムの作製 (2008)
  • Author(s): 関口 寛人, 田中 譲, 菊池 昭彦, 岸野 克巳
  • Organizer: 第55回応用物理関係連合講演会
  • Place of Presentation: 千葉県
• [Presentation] InGaNIGaN量子ディスクナノコラムの光学特性 (2008)
  • Author(s): 田中 譲, 関口 寛人, 菊池 昭彦, 岸野 克巳
  • Organizer: 第55回応用物理関係連合講演会
  • Place of Presentation: 千葉県
• [Presentation] InGaNIGaN単一ナノコラムの偏光発光測定 (2008)
  • Author(s): 金田 昭男, 船戸 充, 川上 養一, 菊池 昭彦, 岸野 克己
  • Organizer: 第55回応用物理関係連合講演会
  • Place of Presentation: 千葉県
• [Presentation] RF-MBE法を用いたSi基板上InGaNIGaNナノコラムLEDの顕微EL特性 (2008)
  • Author(s): 関口 寛人, 加藤 圭, 菊池 昭彦, 岸野 克巳
  • Organizer: 第55回応用物理関係連合講演会
  • Place of Presentation: 千葉県
• [Presentation] 紫外域〜可視域ナノコラムLEDの顕微発光特性 (2007)
  • Author(s): 関口 寛人、坂本 晃輝、加藤 圭、田中 譲、菊池 昭彦、岸野 克巳
  • Organizer: 応用物理学会結晶工学分科会2007年年末講演会
  • Place of Presentation: 東京
  • Year and Date: 2007-12-14
• [Presentation] InGaN (可視長波長域発光デバイス) -ナノコラムInGaNと緑から赤発光 (2007)
  • Author(s): 岸野 克巳、菊池 昭彦、関口 寛人、石沢 峻介
  • Organizer: 日本学術振興会、結晶加工と評価技術第145委員会、第110回研究会
  • Place of Presentation: 東京
  • Year and Date: 2007-06-04
• [Presentation] GaN nanowalls grown by RF-plasma assisted molecular beam epitaxy (2007)
  • Author(s): A. Kikuchi, T. Hoshino, S. Ishizawa, H. Sekiguchi, K. Kishino
  • Organizer: 2007 MRS Fall Meeting, Q4.6, Boston, M.A. USA
• [Presentation] InGaN Nanocolumn based Green-Red Light Emitting Devices (2007)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa
  • Organizer: 26th Electronic Materials Symposium (EMS-26)
  • Place of Presentation: Shiga, Japan
• [Presentation] InN/lnAIN multiple quantum well nanocolumns grown on (111) Si substrates by rf-plasma assisted molecular beam epitaxy (2007)
  • Author(s): K. Kishino, J. Kamimura, A. Kikuchiand P. Holmstrom
  • Organizer: ECS Meeting Abstracts, MA 2007-01, 211th Meeting of The Electrochemical Society
  • Place of Presentation: Chicago, Illinois, USA
• [Presentation] Ultraviolet to red emission nano-LEDs based on one-dimensional III-Vnitride nanocolumns grown on(111)conductive Si substrates (2007)
  • Author(s): K. Kishino, A. Kikuchi, H. Sekiguchi, S. Ishizawa
  • Organizer: ECS Meeting Abstracts, 212th Meeting of The Electrochemical Society
  • Place of Presentation: Washington, DC, USA
• [Presentation] Remarkable reduction of electron concentration of In-rich InxGal-xN(x〜0.7)by Mg doping (2007)
  • Author(s): A. Kikuchi, J. Kamimura, K. Kishino
  • Organizer: 2007 Electronic Materials Conference
  • Place of Presentation: Nortre Dame, Indiana, USA
• [Presentation] Optical Properties of In-Rich InAIN Nanocolumns (2007)
  • Author(s): J. Kamimura, S. Ishizawa, A. Kikuchi, K. Kishino
  • Organizer: 7th International Conference of Nitride Semiconductors(IONS 7)
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] GaN/AIGaN Nanocolumn Ultraviolet Light Emitting Diodes on N-(Iln SiSubstrates Grown by Rf-Plasma Assisted Molecular Beam Epitaxy (2007)
  • Author(s): H. Sekiguchi, S. Ishizawa, K. Sakamoto, G. Kobayashi, J. Tanaka, K. Kato, A. Kikuchi, K. Kishino
  • Organizer: 7th International Conference of Nitride Semiconductors(IONS 7)
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Selective Growth of GaN Nanocoluxnns with Pre-Deposited Al Pattern on(III)Si by Rf-Plasma Assisted Molecular Beam Epitaxy (2007)
  • Author(s): S. Ishizawa, H. Sekiguchi, T. Hoshino, S. Sugixnoto, A. Kikuchi, K. Kishino
  • Organizer: 7th International Conference of Nitride Semiconductors(ICNS 7)
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] GaN nanowalls grown by RF-plasma assisted molecular beam epitaxy (2007)
  • Author(s): A. Kikuchi, T. Hoshino, S. Ishizawa, H. Sekiguchi, K. Kishino
  • Organizer: 2007MRS Fall Meeting
  • Place of Presentation: Boston, M. A. USA
• [Presentation] Be-doping effect fi)r InGaN/GaN nanocolumn L、EDs grown by RF.assistedmolecular beam epitaxy (2007)
  • Author(s): H. Sekiguchi, S. lshizawa, K Sakamoto, K. Kato, J. Tanaka, A. Kikuchi, K. Kishino
  • Organizer: The 34th International Symposium on Compound Semiconductors(iscs2007)
  • Place of Presentation: Kyoto, Japan
• [Presentation] Time-resolved Photoluminescence Spectroscopy of Single InGaN/GaN Nanocoluxnn (2007)
  • Author(s): Y. Kawakami, A. Kanai, A. Kaneta, M. Funato, A. Kikuchi, K. Kishino
  • Organizer: The 34th International Symposium on Compound Semiconductors(iscs2007)
  • Place of Presentation: Kyoto, Japan
• [Presentation] GaN及びlnGaN/GaNナノコラム結晶の光学特性 (2007)
  • Author(s): 井上 昌弥、幸山 和晃、猪瀬 裕太、鈴木 直樹、欅田 英之、江馬 一弘、関口 寛人、菊池 昭彦、岸野 克巳
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] InGaN/GaNナノコラムLED構造のBeドープ効果 (2007)
  • Author(s): 加藤 圭、関口 寛人、坂本 晃輝、田中 譲、菊池 昭彦、岸野 克巳
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] Tiマイクロパターンを用いたGaNナノコラムの選択成長 (2007)
  • Author(s): 星野 隼之、石沢 峻介、関口 寛人、菊池 昭彦、岸野 克巳
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] RF-MBE法による高In組成lnAINナノコラムの発光特性 (2007)
  • Author(s): 神村 淳平、石沢 峻介、菊池 昭彦、岸野 克巳
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] RF-MBE法を用いたGaNテンプレート上lnGaN/GaN量子井戸の成長 (2007)
  • Author(s): 阿久津 正典、Ramesh Vadivelu、関口 寛人、石沢 峻介、菊池 昭彦、岸野 克巳
  • Organizer: 68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] RF-MBE法によるA1パターンを用いたGaNナノコラムの選択成長:パターン形状依存性 (2007)
  • Author(s): 石沢 峻介、星野 隼之、杉本 修一、関口 寛人、菊池 昭彦、岸野 克巳
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] InGaNIGaN量子ディスクナノコラムのKOH処理による光学特性評価 (2007)
  • Author(s): 田中 譲、関口 寛人、Holmstrom Petter、菊池 昭彦、岸野 克巳
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] Si基板上InGaNIGaN QWナノコラムLEDの電極プロセス (2007)
  • Author(s): 坂本 晃輝、関口 寛人、菊池 昭彦、岸野 克己
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] AIGalnN系赤色〜赤外域ナノコラム光デバイス結晶の開拓 (2007)
  • Author(s): 岸野 克巳、菊池 昭彦、関口 寛人、石沢 峻介、神村 淳平
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道
• [Presentation] Photoluminescence of exciton and biexciton in GaN nanocolumns (2007)
  • Author(s): K. Kouyama, M. Inoue, Y. Inose, N. Suzuki, H. Kunugita, K. Ema, A. Kikuchi, K. Kishino
  • Organizer: 16th International Conference on Dynamical Processes in Excited States of Solids(DPCO7)
  • Place of Presentation: Segovia, Spain
• [Presentation] mtrafast intersubband relaxation dynamics in GaN/AIN multiple quantum disk nanocolumns (2007)
  • Author(s): K. Tanaka, K. lkuno, Y. Kasai, K.Fukunaga, H. Kunugita, K. Ema, A. Kikuchi, K. Kishino
  • Organizer: 16th International Conference on Dynamical Processes in Excited States of Solids(DPCO7)
  • Place of Presentation: Segovia, Spain
• [Presentation] InNナノコラムにおけるバンドギャップとキャリア濃度の評価 (2007)
  • Author(s): 福永 和哉、幸山 和晃、欅田 英之、江馬 一弘、神村 淳平、菊池 昭彦、岸野 克巳
  • Organizer: 日本物理学会第62回年次大会
  • Place of Presentation: 北海道
• [Presentation] Growth and characterization of rainbow-colored InGaN/GaN nanocolumn light emitting diodes (2006)
  • Author(s): A. Kikuchi, H. Sekiguchi, K. Kishino
  • Organizer: Eighth International Conference on Nanostructured Materials (NANO2006), D4-6
  • Place of Presentation: Bangalore, India
• [Book] 化合物半導体の最新技術 大全集 第3章第9節ナノコラムLED (2007)
  • Author(s): 岸野克巳, 菊池昭彦 (分担執筆)
  • Publisher: 技術情報協会
• [Book] "ナノコラムLED"、越路恵一編(化合物半導体の最新技術大全集〈第3章第9節〉分担執筆) (2007)
  • Author(s): 岸野 克巳、菊池 昭彦
  • Publisher: 技術情報協会
• [Book] "GaN Nanocolumn Light Emitting Devices", No.5.1.2:Chapter 5, pp.287-296, 0f "Wide Bandgap Semiconductors" (2007)
  • Author(s): K. Kishino
  • Publisher: Springer
• [Patent(Industrial Property Rights)] III族窒化物構造体およびIII族窒化物半導体微細柱状結晶の製造方法 (2008)
  • Inventor(s): 岸野克巳, 菊池昭彦
  • Industrial Property Rights Holder: 上智学院
  • Filing Date: 2008-08-27
  • Overseas
• [Patent(Industrial Property Rights)] III族窒化物構造体およびIII族窒化物半導体微細柱状結晶の製造方法 (2008)
  • Inventor(s): 岸野克巳, 菊池昭彦
  • Industrial Property Rights Holder: 上智学院
  • Filing Date: 2008-09-01
  • Overseas
• [Patent(Industrial Property Rights)] 半導体素子およびその製造方法 (2008)
  • Inventor(s): 岸野克巳, 菊池昭彦, 関口寛人
  • Industrial Property Rights Holder: 上智学院
  • Industrial Property Number: 2008-224129
  • Filing Date: 2008-09-01
• [Patent(Industrial Property Rights)] 半導体素子およびその製造方法 (2008)
  • Inventor(s): 岸野克巳, 菊池昭彦, 関口寛人
  • Industrial Property Rights Holder: 上智学院
  • Industrial Property Number: 2008-022413
  • Filing Date: 2008-09-01
• [Patent(Industrial Property Rights)] III族窒化物構造体およびIII族窒化物構造体の製造方法 (2008)
  • Inventor(s): 岸野克巳, 菊池昭彦
  • Industrial Property Rights Holder: 上智学院
  • Filing Date: 2008-11-26
  • Overseas
• [Patent(Industrial Property Rights)] III族窒化物構造体およびIII族窒化物構造体の製造方法 (2008)
  • Inventor(s): 岸野克巳, 菊池昭彦
  • Industrial Property Rights Holder: 上智学院
  • Filing Date: 2008-11-26
  • Overseas
• [Patent(Industrial Property Rights)] III族窒化物構造体およびIII族窒化物半導体微細柱状結晶の製造方法 (2007)
  • Inventor(s): 岸野 克巳、菊池 昭彦
  • Industrial Property Rights Holder: 岸野 克巳、菊池 昭彦
  • Industrial Property Number: 2007-306654
  • Filing Date: 2007-09-03
• [Patent(Industrial Property Rights)] III族窒化物構造体および田族窒化物構造体の製造方法 (2007)
  • Inventor(s): 岸野 克巳、菊池 昭彦
  • Industrial Property Rights Holder: 岸野 克巳、菊池 昭彦
  • Industrial Property Number: 2007-306654
  • Filing Date: 2007-11-27