| Project/Area Number |
18360354
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Osaka University |
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Principal Investigator |
HIRATA Yoshinori Osaka University, Graduate school of engineering, Professor (00116089)
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| Co-Investigator(Kenkyū-buntansha) |
NISHIYAMA Hiroaki Osaka University, Graduate school of engineering, Assistant professor (80403153)
MIYASAKA Fumikazu Osaka University, Graduate school ofengineering, Assistant professor (80304012)
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| Project Period (FY) |
2006 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥17,270,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2007: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2006: ¥10,900,000 (Direct Cost: ¥10,900,000)
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| Keywords | Field emission / Microdischarge / Miernelectrndes / Femtnsecnnd laser / ナノチューブ / マイクロプラズマ / 半導体プロセス |
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| Research Abstract |
In this study, we fabricated field emission and micro-discharge devices using femtosecond laser lithography. The experimental results are as follows:
1. Femtosecond laser lithography
We proposed the combined process of femtosemnd laser-induced nonlinear lithography and etching processes. This process enables to fabricate microstructures onto nonpanar substrates, which is rather difficult for the conventional photolithography processes.
2. Space-selective growth of carbon nanotubes on a microelectrode tip
The patterns were formed on Au thin films by field emitted electron beams extracted from the microelectrode tips overall coated with carbon nanotubes. We investigated the effect of curvature radius, gap length between electrodes and applied voltages on the microfabrication of Au thin films by field emitted electron beams. The increases of curvature radius and applied voltages were effective for pattern formation by field emission, resulting in the patterns of 2μm diameters were created. Carbon nanotubes were space-selectively grown only on the top part of a microelectrode tip. The patterns of approximately 2μm diameters could be formed by using the microelectrodes with CNTs.
3. Arrayed microdischarge cavities
Arrays of hollow cathode microelectrode cavities were fabricated in Si wafers by semiconductor technology. The diameter of individual cavity was 30μm. Stable glow discharges were generated in atmospheric pressure of Ar gas. The patterns of 33 μm diameters were successfully formed on a resist thin film by using maskless microdischarge processes with O_2 and Ar mixed gas.
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