Fundamental Study on GaN-based Surface emitting devices and their integration

• Project/Area Number: 18560344
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kogakuin University
• Principal Investigator: HONDA Tohru Kogakuin University, 工学部, 教授 (20251671)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥3,750,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥450,000); Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2007: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2006: ¥1,800,000 (Direct Cost: ¥1,800,000)
• Keywords: 窒化物 / 半導体 / 発光素子 / 面発光 / 集積 / 発光ダイオード / エレクトロルミネッセンス / 分子線エピタキシャル成長 / 紫外線発光 / 窒化ガリウム / ショットキー型 / アルミニウム / 集積化 / 窒化物半導体 / GaN / ディスプレイ / 分子線エピタキシー

Research Abstract

高効率発光ダイオードがダブルへテロ構造および量子井戸、pn接合により実現されているが、マイクロディスプレイ応用の観点から、製作コストの点からデバイス構造の抜本的改革が必要とされている。本研究ではショットキー型発光ダイオードに着目し、低コスト集積化応用およびその発光効率向上を検討してきた。本素子は、逆方向リーク電流が少ないことが、素子の動作原理上要求される。窒化物上に蒸着したアルミニウム薄膜の大気中酸化およびその大気中エッチングにより低リーク電流を実現した

Research Products

• [Journal Article] Fabrication of MgZnO films by molecular precursor method andtheir application to UV-transparent electrodes (2009)
  • Author(s): Y. Mashiyama, K. Yoshioka, S. Komiyama, H. Nomura, S. Adachi M. Sato, T. Honda
  • Journal Title: Physica Status Solidi (c) 6 Pages: 596-598
  • Peer Reviewed
• [Journal Article] Fabrication of AlN films at low temperature by CS-MBE technique (2008)
  • Author(s): T. Honda, K. Watanabe, K. Sugimoto, M. Arai and K. Takeda
  • Journal Title: Physica Status Solidi (c) vol.5, no.9 Pages: 3026-3028
• [Journal Article] Fabrication of GaN-based Schottky-type light-emitting diodes for micropixels in flat-panel displays (2008)
  • Author(s): T. Honda, T. Kobayashi, S. Komiyama, Y. Mashiyama, M. Arai and K. Yoshioka
  • Journal Title: Physica Status Solidi (c) vol.5, no.6 Pages: 2225-2227
• [Journal Article] Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB light-emitting pixels (2008)
  • Author(s): M. Arai, K. Sugimoto, S. Egawa, T. Honda
  • Journal Title: Physica Status Solidi (c) vol.5, no.6 Pages: 2176-2178
• [Journal Article] Introduction of preheated ammonia during GaN growth on Si by compound-source MBE at low temperature (2008)
  • Author(s): T. Honda, M. Sawadaishi, H. Yamamoto, M. Arai, K. Yoshioka and T. Okuhata
  • Journal Title: Journal of Crystal Growth vol.310 Pages: 1781-1784
• [Journal Article] Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB light-emitting pixels (2008)
  • Author(s): M. Arai, K. Sugimoto, S. Egawa, T. Honda
  • Journal Title: Physica Status Solidi(c) 5 Pages: 2176-2178
  • Peer Reviewed
• [Journal Article] Fabrication of GaN-based Schottky-type light-emitting diodes formicropixels in flat-panel displays (2008)
  • Author(s): T. Honda. T. Kobayashi, SKomiyama, Y. Mashiyama, M. Arai, K. Yoshioka
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2225-2228
  • Peer Reviewed
• [Journal Article] Introduction of preheated ammonia during GaN growth on Si bycompound-source MBE at low temperature (2008)
  • Author(s): T. Honda. M. Sawadaishi, H. Yamamoto, M. Arai, K. Yoshioka, T. Okuhata
  • Journal Title: Journal of Crystal Growth 310 Pages: 1781-1784
  • Peer Reviewed
• [Journal Article] Fabrication of AIN films at low temperature by CS-MBE technique (2008)
  • Author(s): T. Honda, K. Watanabe, K. Sugimoto, M. Arai, K. Takeda
  • Journal Title: Physica Status Solidi (c) 5 Pages: 3026-3028
  • Peer Reviewed
• [Journal Article] Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy (2008)
  • Author(s): S. Komiyama, K. Noguchi, S. Suzuki, T. Honda
  • Journal Title: Journal of Crystal Growth 310 Pages: 5214-5216
  • Peer Reviewed
• [Journal Article] Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region (2007)
  • Author(s): T. Honda, T. Kobayashi, S. Komiyama and Y. Mashiyama
  • Journal Title: Journal of Vacuum Science and Technology B vol.25,no.4 Pages: 1529-1532
• [Journal Article] Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices (2007)
  • Author(s): T. Honda, T. Baba, M. Watanabe and T. Okuhata
  • Journal Title: Physica Status Solidi (a) vol.204, no.6 Pages: 1982-1986
• [Journal Article] Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources (2007)
  • Author(s): M. Sawada, M. Sawadaishi, H. Yamamoto, M. Arai and T. Honda
  • Journal Title: Journal of Crystal Growth vol.301-302 Pages: 67-70
• [Journal Article] Low-temperature deposition of hexagonal GaN films for UV electroluminescent devices by CS-MBE technique (2007)
  • Author(s): T. Honda, S. Egawa, K. Sugimoto and M. Arai
  • Journal Title: Journal of Crystal Growth vol.301-302 Pages: 424-428
• [Journal Article] GaN films deposited on (111)Si by CS-MBD with re-evaporation enhancement technique for UV light-emitting devices (2007)
  • Author(s): M. Arai, K. Sugimoto, S. Egawa, T. Baba and T. Honda
  • Journal Title: Physica Status Solidi (c) vol.4, no.5 Pages: 1719-1722
• [Journal Article] Compound-source molecular beam epitaxy of GaN on Si at low temperature using GaN powder and ammonia as sources (2007)
  • Author(s): T. Honda, M. Sawada, H. Yamamoto and M. Sawadaishi
  • Journal Title: Mater. Res. Soc. Symp. Proc. 955E, Warrendale, PA
• [Journal Article] Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy (2007)
  • Author(s): T. Honda, T. Kobayashi, S. Egawa, M. Sawada, K. Sugimoto and T. Baba
  • Journal Title: Journal of Crystal Growth vol.300 Pages: 90-93
• [Journal Article] Fabrication of GaN-based electroluminescent devices on Al substrates and their application to red, green and blue pixels for flat-panel displays (2007)
  • Author(s): K. Sugimoto, S. Egawa, M. Arai and T. Honda
  • Journal Title: Physica Status Solidi (c) vol.4, no.1 Pages: 53-56
• [Journal Article] GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays (2007)
  • Author(s): T. Kobayashi, S. Egawa, M. Sawada and T. Honda
  • Journal Title: Physica Status Solidi (c) vol.4, no.1 Pages: 61-64
• [Journal Article] ZnO films fabricated by spin coating and their application to UV electroluminescent devices (2007)
  • Author(s): K. Yoshioka, S. Egawa, T. Kobayashi, T. Baba, K. Sugimoto, M. Arai, H. Nomura, M. Sato and T. Honda
  • Journal Title: Physica Status Solidi (c) vol.4, no.1 Pages: 162-165
• [Journal Article] Integrated light-emitting diodes grown by MOVPE for flat panel displays (2007)
  • Author(s): T. Honda, T. Kobayashi, S. Egawa, M. Sawada, K. Sugimoto and T. Baba
  • Journal Title: Journal of Crystal Growth vol.298 Pages: 736-739
• [Journal Article] Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region (2007)
  • Author(s): T. Honda, T. Kobayashi, S. Komiyama, Y. Mashiyama
  • Journal Title: Journal of Vacuum Science and Technology B 25 Pages: 1529-1532
  • Peer Reviewed
• [Journal Article] Fabrication of surface-oxidized GaN crystallites for UV electroluminescent devices (2007)
  • Author(s): T.Honda, T. Baba, M. Watanabe, T. Okuhata
  • Journal Title: Physica Status Solidi(a) 204 Pages: 1982-1986
  • Peer Reviewed
• [Journal Article] Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources (2007)
  • Author(s): T. Honda, S. Egawa, K. Sugimoto, M. Arai
  • Journal Title: Journal of Crystal Growth 301-302 Pages: 67-70
  • Peer Reviewed
• [Journal Article] Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy (2007)
  • Author(s): T.Honda, T.Kobayashi, S.Egawa, M.Sawada, K.Sugimoto, T.Baba
  • Journal Title: Journal of Crystal Growth 300 Pages: 90-93
• [Journal Article] Fabrication of GaN-based electroluminescent devices on Al substrates and their application to red, green and blue pixels for flat-panel displays (2007)
  • Author(s): K.Sugimoto, S.Egawa, M.Arai, T.Honda
  • Journal Title: Physica Status Solidi (c) Vol.4, no.1 Pages: 53-56
• [Journal Article] GaN-based Schottky-type UV light-emitting diodes and their integration for flat-panel displays (2007)
  • Author(s): T.Kobayashi, S.Egawa, M.Sawada, T.Honda
  • Journal Title: Physica Status Solidi (c) Vol.4, no.1 Pages: 61-64
• [Journal Article] ZnO films fabricated by spin coating and their application to UV electroluminescent devices (2007)
  • Author(s): K.Yoshioka, S.Egawa, T.Kobayashi, T.Baba, K.Sugimoto, M.Arai, H.Nomura, M.Sato, T.Honda
  • Journal Title: Physica Status Solidi (c) Vol.4, no.1 Pages: 162-165
• [Journal Article] Integrated light-emitting diodes grown by MOVPE for flat panel displays (2007)
  • Author(s): T.Honda, T.Kobayashi, S.Egawa, M.Sawada, K.Sugimoto, T.Baba
  • Journal Title: Journal of Crystal Growth 298 Pages: 736-739
• [Journal Article] Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy (2006)
  • Author(s): T.Honda, M.Sawada, T.Kobayashi, S.Egawa, Y.Aoki, M.Akiyama, H.Kawanishi
  • Journal Title: Physics Status Solidi (c) Vol.3, no.6 Pages: 1870-1873
• [Presentation] GaN系MOS型紫外発光ダイオードの逆方向リーク電流低減の検討 (2009)
  • Author(s): 野崎理, 小宮山重利, 渡辺謙二, 鈴木翔太, 本田徹
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: 筑波大学, 茨城
  • Year and Date: 2009-04-01
• [Presentation] 化合物原料分子線エピタキシー法による(0001)Al_2O_3基板上へのGaN薄膜成長 (2009)
  • Author(s): 田口悟, 澤田石将士, 相原繁, 後藤大雅, 本田徹
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: 筑波大学, 茨城
  • Year and Date: 2009-03-30
• [Presentation] Tremendous reduction of reverse-bias leakage current in GaN-based Schottky-type light-emitting diodes by a surface modificationusing the aluminum facepack technique (2009)
  • Author(s): T. Honda. S. Komiyama, T. Sakka, K. Noguchi
  • Organizer: 36th Conference on the physics and chemistry of semiconductor interfaces (PCSI-36)
  • Place of Presentation: Hotel Mar Monte, SantaBarbara, CA, U. S. A
  • Year and Date: 2009-01-12
• [Presentation] 36th Conference on the physics and chemistry of semiconductor interfaces (PCSI-36) (2009)
  • Author(s): T. Honda, S. Komiyama, T. Sakka and K. Noguchi
  • Organizer: Hotel Mar Monte
  • Place of Presentation: Santa Barbara, CA, U. S. A
• [Presentation] CS-MBE法による表面窒化したAl基板上へのGaN薄膜の製作 (2008)
  • Author(s): 田口悟, 澤田石将士, 相原繁, 後藤大雅, 本田徹
  • Organizer: 応用物理学会結晶工学分科会2008年末講演会
  • Place of Presentation: 学習院大学, 東京
  • Year and Date: 2008-12-11
• [Presentation] RFラジカル窒素源を用いた化合物原料分子線堆積法による(111)Si基板上へのGaN薄膜の低温堆積 (2008)
  • Author(s): 眼目貴大, 福島孝司, 澤田石将士, 本田徹
  • Organizer: 応用物理学会結晶工学分科会2008年末講演会
  • Place of Presentation: 学習院大学, 東京
  • Year and Date: 2008-12-11
• [Presentation] GaN系MOS型紫外発光ダイオードの逆方向電流の低減 (2008)
  • Author(s): 鈴木翔太, 小宮山重利, 野崎理, 本田徹
  • Organizer: 応用物理学会結晶工学分科会2008年末講演会
  • Place of Presentation: 学習院大学, 東京
  • Year and Date: 2008-12-11
• [Presentation] 分子プレカーサー法を用いた紫外発光素子のためのGa-doped MgZnO透明電極の製作検討 (2008)
  • Author(s): 増山佳宏, 吉岡香織, 藤田健太郎, 野村裕久, 佐藤光史, 本田徹
  • Organizer: 応用物理学会結晶工学分科会2008年末講演会
  • Place of Presentation: 学習院大学, 東京
  • Year and Date: 2008-12-11
• [Presentation] Fabrication of Ga-doped MgZnO-based Transparent Electrodes byMolecular Precursor Method for GaN-based UV LED (2008)
  • Author(s): T. Honda. Y. Mashiyama, S. Komiyama, M. Sato
  • Organizer: Materials Research Society (MRS) 2008 fallmeeting
  • Place of Presentation: Hynes Convention Center, Boston, USA
  • Year and Date: 2008-12-03
• [Presentation] Fabrication of surface-coated GaN crystallites deposited on Si substrate (2008)
  • Author(s): T. Okuhata, K. Tomioka, M. Sawadaishi, S. Taguchi andT. Honda
  • Organizer: IEEE Nanotechnology Materials and DevicesConference 2008
  • Place of Presentation: Kyoto University, Kyoto, Japan
  • Year and Date: 2008-10-22
• [Presentation] Fabrication of AlGaN-based UV MOS LEDs grown by MBE (2008)
  • Author(s): T. Honda. S. Komiyama, S. Suzuki, T. Okuhata
  • Organizer: 35th International Symposium on CompoundSemiconductors (ISCS-2008)
  • Place of Presentation: Europa-Park, Rust, Germany
  • Year and Date: 2008-09-22
• [Presentation] RF-MBE法により成長したAlGaN薄膜を用いた紫外発光MOS-LEDの製作 (2008)
  • Author(s): 鈴木翔太, 小宮山重利, 奥畠隆嗣, 野口和之, 本田徹
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛知
  • Year and Date: 2008-09-05
• [Presentation] GaN薄膜成長のための表面窒化Al基板製作 (2008)
  • Author(s): 田口悟, 澤田石将士, 笹谷光基, 山本博美, 本田徹
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛札
  • Year and Date: 2008-09-05
• [Presentation] AlO_x表面をコートしたGaN微結晶の製作とカソードルミネッセンスによる評価 (2008)
  • Author(s): 奥畠隆嗣, 澤田勝, 澤田石将士, 本田徹
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛知
  • Year and Date: 2008-09-04
• [Presentation] Nitridation of (111)Al substrates for GaN growth by molecular beam epitaxy (2008)
  • Author(s): M. Sawadaishi, S. Taguchi, K. Sasaya, T. Honda
  • Organizer: The 15th International Conference on Molecular Beam Epitaxy (ICMBE-15)
  • Place of Presentation: UBC, Vancouver, Canada
  • Year and Date: 2008-08-05
• [Presentation] Surface recombination of the GaN crystallites at low temperature (2008)
  • Author(s): T. Okuhata, K. Tomioka, M. Sawada, M. Sawadaishi, andT. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Laforet Shuzenji, Izu, Japan
  • Year and Date: 2008-07-09
• [Presentation] Surface-oxide etching on Al substrates for the formation of AIN (2008)
  • Author(s): S. Taguchi, M. Sawadaishi, K. Sasaya, H. Yamamoto, T. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Laforet Shuzenji, Izu, Japan
  • Year and Date: 2008-07-09
• [Presentation] XPS spectra of GaN layers grown by compound-source MBE with RF-plasma assisted N_2 supply (2008)
  • Author(s): T. Sakka, M. Arai, S. Egawa, T. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Laforet Shuzenji, Izu
  • Year and Date: 2008-07-09
• [Presentation] Formation of AIN layer on (111)Al substrate by ammonia nitridation (2008)
  • Author(s): T. Honda, H. Yamamoto, M. Sawadaishi, S. Taguchi andK. Sasaya
  • Organizer: Second international Symposium on growth of III-Nitrides (ISGN-2)
  • Place of Presentation: Laforet Shuzenji, Izu, Japan
  • Year and Date: 2008-07-08
• [Presentation] Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy (2008)
  • Author(s): S. Komiyama, K. Noguchi, S. Suzuki, T. Honda
  • Organizer: 14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-14)
  • Place of Presentation: Metz, France
  • Year and Date: 2008-06-03
• [Presentation] Fabrication of MgZnO Films by Molecular Precursor Method and Its Application to UV-Transparent Electrodes (2008)
  • Author(s): Y. Mashiyama, K. Yoshioka, S. Komiyama, S. Adachi, M. Sato, T. Honda
  • Organizer: International Symposium on Semiconductor Light Emitting Devices (ISSLED2008)
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2008-04-29
• [Presentation] Insertion of oxide layer to GaN-based Schottky-type UV light-emitting diode (2008)
  • Author(s): Tohru HONDA
  • Organizer: 日独スペインワークショップ
  • Place of Presentation: プリンス箱根
  • Year and Date: 2008-03-08
• [Presentation] Formation of AlN layer on (111)Al substrate by ammonia nitridation (2008)
  • Author(s): T. Honda, H. Yamamoto, M. Sawadaishi, S. Taguchi and K. Sasaya
  • Organizer: Second international Symposium on growth ofIII-Nitrides (ISGN-2), Laforet Shuzenji
  • Place of Presentation: Izu, Japan
• [Presentation] Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy (2008)
  • Author(s): S. Komiyama, K. Noguchi, S. Suzuki and T. Honda
  • Organizer: 14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-14)
  • Place of Presentation: Metz, France, We-P. 69
• [Presentation] Nitridation of (111)Al substrates for GaN growth by molecular beam epitaxy (2008)
  • Author(s): M. Sawadaishi, S. Taguchi, K. Sasaya and T. Honda
  • Organizer: The 15th International Conference on Molecular Beam Epitaxy (ICMBE-15), Vancouver
  • Place of Presentation: Canada
• [Presentation] Fabrication of AlGaN-based UV MOS LEDs grown by MBE (2008)
  • Author(s): T. Honda, S. Komiyama, S. Suzuki and T. Okuhata
  • Organizer: 35th International Symposium on Compound Semiconductors (ISCS-2008), Europa-Park, Rust
  • Place of Presentation: Germany
• [Presentation] Fabrication of surface-coated GaN crystallites deposited on Si substrate (2008)
  • Author(s): T. Okuhata, K. Tomioka, M. Sawadaishi, S. Taguchi and T. Honda
  • Organizer: IEEE Nanotechnology Materials and Devices Conference 2008
  • Place of Presentation: Kyoto University, Kyoto, Japan
• [Presentation] Fabrication of Ga-doped MgZnO-based Transparent Electrodes by Molecular Precursor Method for GaN-based UV LED (2008)
  • Author(s): T. Honda, Y. Mashiyama, S. Komiyama and M. Sato
  • Organizer: Materials Research Society (MRS) 2008 fall meeting
  • Place of Presentation: Boston, USA
• [Presentation] Surface recombination of the GaN crystallites at low temperature (2008)
  • Author(s): T. Okuhata, K. Tomioka, M. Sawada, M. Sawadaishi, and T. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Laforet Shuzenji, Izu
• [Presentation] Surface-oxide etching on Al substrates for the formation of AlN (2008)
  • Author(s): S. Taguchi, M. Sawadaishi, K. Sasaya, H. Yamamoto and T. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27), Laforet Shuzenji
  • Place of Presentation: Izu, Japan
• [Presentation] XPS spectra of GaN layers grown by compound-source MBE with RF-plasma assisted N2 supply (2008)
  • Author(s): T. Sakka, M. Arai, S. Egawa and T. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Laforet Shuzenji, Izu, Japan
• [Presentation] Absorption loss in GaN-based Schottky-type UV-LEDs (2008)
  • Author(s): K. Noguchi, S. Komiyama and T. Honda
  • Organizer: 27th Electronic Materials Symposium (EMS-27)
  • Place of Presentation: Laforet Shuzenji, Izu, Japan
• [Presentation] GaN系MOS型紫外発光ダイオードの逆方向電流の低減 (2008)
  • Author(s): 本田徹、小宮山重利、増山佳宏、渡邊謙二
  • Organizer: 電子通信情報学会レーザ・量子エレクトロニクス研究会(LQE)
  • Place of Presentation: 名古屋工業大学, 名古屋市
• [Presentation] Fabrication of MgZnO Films by Molecular Precursor Method and Its Application to UV-Transparent Electrodes (2007)
  • Author(s): Y. Mashiyama, K. Yoshioka, S. Komiyama, S. Adachi, M. Sato and T. Honda
  • Organizer: International Symposium on Semiconductor Light Emitting Devices (ISSLED2008), Phoenix
  • Place of Presentation: Arizona, USA