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Development of Novel High-Performance Semiconductor Bonding Mediated by Monolayer Materials for the Realization of Ultrahigh-Efficiency Solar Cells

Research Project

Project/Area Number 18H01475
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionKyoto University

Principal Investigator

Tanabe Katsuaki  京都大学, 工学研究科, 准教授 (60548650)

Project Period (FY) 2018-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2021: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2020: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2019: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2018: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Keywords半導体接合 / ウェハ貼り合わせ / 単原子層材料 / 機能性材料 / 透明導電酸化物 / 波長変換材料 / 太陽電池 / 光電子デバイス / 量子ドット / ウェハ接合 / ハイドロジェル / 半導体 / 光・電子デバイス / 接合 / ダブルヘテロ構造 / グラフェン
Outline of Final Research Achievements

We proposed and experimentally demonstrated various novel high-functionality semiconductor wafer bonding technologies. We succeeded in the first-time realization of semiconductor bonding via a monolayer material. We also generated the concept of hydrogel-mediated semiconductor wafer bonding. The unique property of hydrogels was utilized to simultaneously realize high mechanical stability, electrical conductivity, and optical transparency in semiconductor interfaces. Furthermore, a new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. This bonding and interfacial scheme can improve the performance and structural flexibility of optoelectronic devices, such as solar cells, by allowing the spectral light incidence suitable for each photovoltaic material, and photonic integrated circuits, by delivering the respective preferred frequencies to the optical amplifier, modulator, waveguide, and detector materials.

Academic Significance and Societal Importance of the Research Achievements

ウェハ接合は低結晶欠陥密度の格子不整合ヘテロ構造形成法であり、高品質な半導体素子の作製法として期待されている。本研究では、界面特性として、高い接合強度、導電性、透光性、表面粗さ許容度を同時に達成した。これまでの半導体接合法として、直接接合、酸化物、金属、ポリマー材料を介した接合が存在していたが、これらの特性全てを満たすものはなく、初めてとなる高性能な接合技術である。また、採用した透明導電材料はハイドロジェルやZnOであり、従来のITO等と比較して、コスト、元素埋蔵量、環境負荷といった点で有利である。これらの新規接合技術は今後、多様な高性能光・電子デバイスの低コスト生産に繋がるものと期待される。

Report

(6 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • Products Report
  • Research Products

    (16 results)

All 2022 2021 2020 2019 2018

All Journal Article (11 results) (of which Peer Reviewed: 11 results,  Open Access: 5 results) Presentation (2 results) (of which Int'l Joint Research: 2 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] Strain relaxation in semiconductor wafer bonding2021

    • Author(s)
      Tanabe Katsuaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 5 Pages: 055504-055504

    • DOI

      10.35848/1347-4065/abf9e4

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Selective transfer of Si thin-film microchips by SiO2 terraces on host chips for fluidic self-assembly2021

    • Author(s)
      Y. Fujita, S. Ishihara, Y. Nakashima, K. Nishigaya, and K. Tanabe
    • Journal Title

      Applied Mechanics

      Volume: 2 Issue: 1 Pages: 16-16

    • DOI

      10.3390/applmech2010002

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Graphene-quantum-dot-mediated semiconductor bonding: A route to optoelectronic double heterostructures and wavelength-converting interfaces2020

    • Author(s)
      K. Nishigaya, K. Kishibe, and K. Tanabe
    • Journal Title

      Journal of Carbon Research

      Volume: 6 Issue: 2 Pages: 28-28

    • DOI

      10.3390/c6020028

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Nanoscale silicon fluidic transfer for ultrahigh-density self-assembled integration2020

    • Author(s)
      S. Ishihara and K. Tanabe
    • Journal Title

      Nano Express

      Volume: 1 Issue: 1 Pages: 010063-010063

    • DOI

      10.1088/2632-959x/ab9d8e

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] III-V light-emitting diodes on silicon by hydrogel-mediated wafer bonding2020

    • Author(s)
      K. Nishigaya and K. Tanabe
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 9 Issue: 8 Pages: 086002-086002

    • DOI

      10.1149/2162-8777/abb794

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ohmic InP/Si direct-bonded heterointerfaces2019

    • Author(s)
      Inoue Ryoichi、Tanabe Katsuaki
    • Journal Title

      Applied Physics Letters

      Volume: 114 Issue: 19 Pages: 191101-191101

    • DOI

      10.1063/1.5092436

    • NAID

      120006634660

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct Semiconductor Wafer Bonding in Non-Cleanroom Environment: Understanding the Environmental Influences on Bonding2019

    • Author(s)
      Inoue Ryoichi、Takehara Nagito、Naito Takenori、Tanabe Katsuaki
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 1 Issue: 6 Pages: 936-944

    • DOI

      10.1021/acsaelm.9b00118

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hydrogel-mediated semiconductor wafer bonding2019

    • Author(s)
      Kishibe Kodai、Tanabe Katsuaki
    • Journal Title

      Applied Physics Letters

      Volume: 115 Issue: 8 Pages: 081601-081601

    • DOI

      10.1063/1.5096540

    • NAID

      120006719311

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Solution‐Processed‐ZnO‐Mediated Semiconductor Bonding with High Mechanical Stability, Electrical Conductivity, Optical Transparency, and Roughness Tolerance2019

    • Author(s)
      Yamashita Tatsushi、Hirata Soichiro、Inoue Ryoichi、Kishibe Kodai、Tanabe Katsuaki
    • Journal Title

      Advanced Materials Interfaces

      Volume: 6 Issue: 22 Pages: 1900921-1900921

    • DOI

      10.1002/admi.201900921

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Wavelength-Conversion-Material-Mediated Semiconductor Wafer Bonding for Smart Optoelectronic Interconnects2019

    • Author(s)
      Kishibe Kodai、Hirata Soichiro、Inoue Ryoichi、Yamashita Tatsushi、Tanabe Katsuaki
    • Journal Title

      Nanomaterials

      Volume: 9 Issue: 12 Pages: 1742-1742

    • DOI

      10.3390/nano9121742

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Fabrication of Si/graphene/Si Double Heterostructures by Semiconductor Wafer Bonding towards Future Applications in Optoelectronics2018

    • Author(s)
      Naito Takenori、Tanabe Katsuaki
    • Journal Title

      Nanomaterials

      Volume: 8 Issue: 12 Pages: 1048-1048

    • DOI

      10.3390/nano8121048

    • NAID

      120006621538

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] Upconversion material-mediated semiconductor bonding2021

    • Author(s)
      N. Sano, K. Nishigaya, and K. Tanabe
    • Organizer
      7th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Selective transfer of Si thin-film microchips for fluidic self-assembly2021

    • Author(s)
      Y. Fujita, S. Ishihara, K. Nishigaya, Y. Nakashima, and K. Tanabe
    • Organizer
      7th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Patent(Industrial Property Rights)] 太陽電池の製造方法2022

    • Inventor(s)
      田辺 克明, 外5名
    • Industrial Property Rights Holder
      国立大学法人京都大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2022-128625
    • Filing Date
      2022
    • Related Report
      Products Report
  • [Patent(Industrial Property Rights)] 微細シリコンデバイスのセルフアッセンブリ方法2020

    • Inventor(s)
      田辺克明、石原翔治
    • Industrial Property Rights Holder
      田辺克明、石原翔治
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2020-088292
    • Filing Date
      2020
    • Related Report
      2020 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体構造物、多接合太陽電池及び半導体構造物の製造方法2019

    • Inventor(s)
      田辺克明、岸部航大、平田桑一朗
    • Industrial Property Rights Holder
      京都大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2019-027609
    • Filing Date
      2019
    • Related Report
      2018 Annual Research Report

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Published: 2018-04-23   Modified: 2024-03-28  

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