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高品質窒化ホウ素半導体への表面ドーピング

Research Project

Project/Area Number 18H01711
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 26020:Inorganic materials and properties-related
Research InstitutionKyushu University

Principal Investigator

堤井 君元  九州大学, 総合理工学研究院, 准教授 (10335995)

Project Period (FY) 2018-04-01 – 2021-03-31
Project Status Granted (Fiscal Year 2020)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2020: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2019: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2018: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Keywordsドーピング / プラズマCVD / パワー半導体

URL: 

Published: 2018-04-23   Modified: 2020-08-26  

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