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超低損失パワーデバイス実現に向けた窒化ガリウムのアバランシェ破壊特性の解明

Research Project

Project/Area Number 18J20080
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Electronic materials/Electric materials
Research InstitutionKyoto University
Research Fellow 前田 拓也  京都大学, 工学研究科, 特別研究員(PD)
Project Period (FY) 2018-04-25 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2020: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2019: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2018: ¥1,100,000 (Direct Cost: ¥1,100,000)
Keywords窒化ガリウム(GaN) / アバランシェ破壊 / 衝突イオン化係数 / 絶縁破壊電界 / p-n接合 / Franz-Keldysh効果 / 光電流 / パワーデバイス / 半導体 / 窒化ガリウム / 電子デバイス / p-n接合ダイオード / 絶縁破壊
Outline of Annual Research Achievements

本年度は,窒化ガリウム(GaN)半導体のアバランシェ破壊特性の解明を目指し,衝突イオン化係数およびその温度依存性の測定に取り組んだ.p-n接合界面から主にp層側へ空乏層が拡がるGaN p-/n+接合ダイオードを作製し,基礎吸収端(~365nm)より短波長/長波長の光照射下における光誘起電流の測定・解析を行うことで,電子注入・正孔注入時のアバランシェ増倍係数を求めた.得られた増倍係数を解析することでGaNの電子・正孔の衝突イオン化係数を223-373K温度範囲で抽出することに成功した.得られた衝突イオン化係数を経験式を用いてモデル化し,得られた衝突イオン化係数の式(パラメータ)を用いてGaNの理想的な絶縁破壊特性をシミュレーションした.様々なドーピング密度のGaN p-n接合に対して絶縁破壊電圧をシミュレーションしたところ,過去に報告されているGaNパワーデバイスの絶縁破壊特性をよく再現した.得られた絶縁破壊電圧より絶縁破壊電界のドーピング密度依存性を経験式を用いてモデル化した.また,絶縁破壊特性の温度依存性,耐圧維持層の極性依存性,膜厚依存性についてもシミュレーションを行い,詳細に議論した.これらの結果は,J. Appl. Phys.に投稿・採択された.

Research Progress Status

令和2年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

令和2年度が最終年度であるため、記入しない。

Report

(3 results)
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • 2018 Annual Research Report

Research Products

(37 results)

All 2021 2020 2019 2018

All Journal Article (12 results) (of which Peer Reviewed: 12 results,  Open Access: 2 results) Presentation (25 results) (of which Int'l Joint Research: 17 results,  Invited: 4 results)

  • [Journal Article] Impact Ionization Coefficients and Critical Electric Field in GaN2021

    • Author(s)
      Takuya Maeda, Tetsuo Narita, Shinji Yamada, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda
    • Journal Title

      Journal of Applied Physics

      Volume: 129

    • DOI

      10.1063/5.0050793

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Defect-insensitive current-voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition2020

    • Author(s)
      Takuya Maeda, Mitsuru Okigawa, Yuji Kato, Isao Takahashi, Takashi Shinohe
    • Journal Title

      AIP Advances

      Volume: 10

    • DOI

      10.1063/5.0028985

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces2020

    • Author(s)
      M. Hara, S. Asada, T. Maeda, and T. Kimoto
    • Journal Title

      Applied Physics Express

      Volume: 13 Pages: 041001-041001

    • DOI

      10.35848/1882-0786/ab7bcd

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Design and Fabrication of GaN p-n Junction Diodes with Negative Beveled-Mesa Termination2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Journal Title

      IEEE Electron Device Letters

      Volume: 40 Pages: 941-944

    • DOI

      10.1109/led.2019.2912395

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from Recombination Current in GaN p-n+ Junction Diodes2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SCCB14-SCCB14

    • DOI

      10.7567/1347-4065/ab07ad

    • NAID

      210000155942

    • ISSN
      0021-4922, 1347-4065
    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Journal Title

      Proceedings of the 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

      Volume: - Pages: 59-62

    • DOI

      10.1109/ispsd.2019.8757676

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Franz-Keldysh effect in 4H-SiC p-n junction diode under high electric field along the <11-20> direction2019

    • Author(s)
      T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 9 Pages: 091007-091007

    • DOI

      10.7567/1347-4065/ab3873

    • ISSN
      0021-4922, 1347-4065
    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Journal Title

      Applied Physics Letters

      Volume: 115 Pages: 142101-142101

    • DOI

      10.1063/1.5114844

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ junction2019

    • Author(s)
      T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Journal Title

      IEDM Technical Digest

      Volume: - Pages: 70-73

    • DOI

      10.1109/iedm19573.2019.8993438

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage2018

    • Author(s)
      Takuya Maeda, Xilun Chi, Masahiro Horita, Jun Suda and Tsunenobu Kimoto
    • Journal Title

      Appl. Phys. Express

      Volume: 11 Issue: 9 Pages: 091302-091302

    • DOI

      10.7567/apex.11.091302

    • NAID

      210000136335

    • ISSN
      1882-0778, 1882-0786
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination2018

    • Author(s)
      Takuya Maeda, Narita Tetsuo, Hiroyuki Ueda, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Journal Title

      IEDM Technical Digest

      Volume: - Pages: 687-690

    • DOI

      10.1109/iedm.2018.8614669

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage2018

    • Author(s)
      Takuya Maeda, Narita Tetsuo, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Journal Title

      Applied Physics Letters

      Volume: 112

    • DOI

      10.1063/1.5031215

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Presentation] GaNの電子・正孔の衝突イオン化係数の温度依存性2021

    • Author(s)
      前田拓也,成田哲生,山田真嗣,加地徹,木本恒暢,堀田昌宏,須田淳
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] サファイア基板上Mist-CVD成長α-Ga2O3ショットキーバリアダイオードにおけるほぼ理想的な熱電子放出および熱電子電界放出2021

    • Author(s)
      前田拓也,沖川満,加藤勇次,高橋勲,四戸孝
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ Junction2020

    • Author(s)
      前田拓也,成田哲生,山田真嗣,加地徹,木本恒暢,堀田昌宏,須田淳
    • Organizer
      IEEE関西コロキアム電子デバイスワークショップ
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] GaNの電子・正孔の衝突イオン化係数の測定2020

    • Author(s)
      前田拓也,成田哲生,山田真嗣,加地徹,木本恒暢,堀田昌宏,須田淳
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] <11-20>方向に電界印加した4H-SiC p-n接合ダイオードにおけるFranz-Keldysh効果に起因したフォノンアシスト光吸収2019

    • Author(s)
      前田拓也,遅熙倫,田中一,堀田昌宏,須田淳,木本恒暢
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode2019

    • Author(s)
      T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita and J. Suda
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination2019

    • Author(s)
      前田拓也,成田哲生,上田博之,兼近将一,上杉勉,加地徹,木本恒暢,堀田昌宏,須田淳
    • Organizer
      IEEE関西コロキウム・電子デバイスワークショップ
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Record Breakdown Fields of 2.8-3.5 MV/cm in GaN p-n Junction Diodes2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Organizer
      The 38th Electronic Materials Symposium (EMS),
    • Related Report
      2019 Annual Research Report
  • [Presentation] Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Organizer
      The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Estimation of Impact Ionization Coefficient in GaN and its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth of P-Type GaN Layers with Low Mg Concentrations by Using MOVPE and the Application to Vertical Power Devices2019

    • Author(s)
      T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, T. Maeda, M. Horita, M. Kanechika, H. Ueda, T. Kachi and J. Suda
    • Organizer
      The 13th International Conference on Nitride Semiconductors (ICNS13)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers2019

    • Author(s)
      T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Organizer
      The 51st International Conference on Solid-State Devices and Materials (SSDM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction2019

    • Author(s)
      D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto
    • Organizer
      The 18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes2019

    • Author(s)
      M. Hara, S. Asada, T. Maeda and T. Kimoto
    • Organizer
      The 18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction2019

    • Author(s)
      T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto
    • Organizer
      The 18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces2019

    • Author(s)
      M. Hara, S. Asada, T. Maeda and T. Kimoto
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations2019

    • Author(s)
      D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ junction2019

    • Author(s)
      T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda
    • Organizer
      The 65th International Electron Devices Meeting (IEDM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage2018

    • Author(s)
      Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Organizer
      60th Electronic Materials Conference (EMC60)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V, I-V, and IPE measurements2018

    • Author(s)
      Takuya Maeda, Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Organizer
      2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage2018

    • Author(s)
      Takuya Maeda, Xilun Chi, Masahiro Horita, Jun Suda and Tsunenobu Kimoto
    • Organizer
      European Conference on Silicon Carbide and Related Materials 2018 (ECSCRM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect2018

    • Author(s)
      Takuya Maeda, Narita Tetsuo, Hiroyuki Ueda, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Organizer
      50th International Conference on Solid-State Devices and Materials (SSDM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect2018

    • Author(s)
      Takuya Maeda, Narita Tetsuo, Hiroyuki Ueda, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes2018

    • Author(s)
      Takuya Maeda, Narita Tetsuo, Hiroyuki Ueda, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination2018

    • Author(s)
      Takuya Maeda, Narita Tetsuo, Hiroyuki Ueda, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita and Jun Suda
    • Organizer
      64th International Electron Devices Meeting (IEDM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research

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Published: 2018-05-01   Modified: 2021-12-27  

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