Electromagnetical coupling of AlCeN films grown by RF magnetron sputtering
| Project/Area Number |
18K19037
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| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
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| Allocation Type | Multi-year Fund |
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| Review Section |
Medium-sized Section 30:Applied physics and engineering and related fields
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| Research Institution | Waseda University |
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Principal Investigator |
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| Project Period (FY) |
2018-06-29 – 2021-03-31
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| Project Status |
Completed (Fiscal Year 2020)
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| Budget Amount *help |
¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2020: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2019: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 圧電薄膜デバイス / BAWフィルタ / FBAR / AlN / 圧電デバイス / 圧電薄膜 |
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| Outline of Final Research Achievements |
Nitride piezoelectric films are attractive for FBAR filters. Enhancement of piezoelectricity was recently found in ScAlN films. Electromagnetical coupling directly contribute to the low insertion loss and large band width. In this study, CeAlN piezoelectric films were grown by RF magnetron sputtering. omega-scan rocking curve FWHM of the c-axis oriented CeAlN films were found to be 3.3 deg., indicating good crystalline orientation. Electromechanical coupling coefficient of the films was determined to be 4.4 % using HBAR conversion loss method.
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| Academic Significance and Societal Importance of the Research Achievements |
圧電性の大きさは直接、スマートフォンのRFフィルタのバンド幅と挿入損失を決定づける。窒化物圧電薄膜の研究は各メーカにおいて急速に進み、現在は大面積量産技術およびデバイスへの搭載技術が確立され、産業化されている。
これまで計算化学では、多くの希土類とAlN, GaN, InNの組み合わせで圧電性増幅が予測されている。しかしながら、実験的には、希土類添加について世界中で大量の実験が行われているにも関わらず、探索研究は頭打ちになっている。本研究では、安価なCeとAlNの組み合わせおいて、結晶成長に成功し、圧電性を実験的に測定した。
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Report
(4 results)
Research Products
(183 results)
