| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2021: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2020: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2019: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2018: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
The n-type SnS thin film was realized by optimizing the film deposition conditions using a combinatorial sputtering method at NREL (USA). N-type SnS thin film was realized by supplying atomic sulfur, which reduces the number of in-gap states. It was found that SnS solar cells are expected to have a high open-circuit voltage of ~0.7 V if the interface defects at the p-n interface are suppressed, according to the XPS measurements performed at TU Darmstadt (Germany). A prototype homojunction solar cell was fabricated by forming a p-type thin film on an n-type single crystal. The conversion efficiency of 1.4% was lower than that of existing heterojunction solar cells, but the open-circuit voltage was as high as 0.36 V, demonstrating the effectiveness of homojunction solar cells.
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