| Project/Area Number |
19360003
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ONABE Kentaro The University of Tokyo, 大学院・新領域創成科学研究科, 教授 (50204227)
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| Co-Investigator(Kenkyū-buntansha) |
KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115)
YAMAMOTO Takahisa 東京大学, 大学院・新領域創成科学研究科, 准教授 (20220478)
YAGUCHI Hiroyuki 埼玉大学, 大学院・理工学研究科, 教授 (50239737)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2007: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
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| Keywords | エピタキシャル成長 / 希薄窒化物半導体 / III-V-N混晶 / 量子ナノ構造 / 量子ドット / InGaAsN / ジメチルヒドラジン / 自己形成量子ドット / 希薄窒化物 |
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| Research Abstract |
In-containing III-V-N type alloy semiconductors, such as InAsN, InGaAsN, InGaPN and InPN, have been grown by MOVPE in the form of thin films or quantum dots. The growth characteristics and material properties, such as bandgap reduction and luminescence, have been clarified in relation with the N incorporation. In particular, room-temperature photoluminescence of 1.2μm wavelength has been realized with the InAsN quantum dots. A novel potential of III-V-N type alloy semiconductors for useful applications has been demonstrated with this study.
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