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Study on gallium oxide-based deep ultraviolet light emitters

Research Project

Project/Area Number 19360007
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto University

Principal Investigator

FUJITA Shizuo  Kyoto University, 工学研究科, 教授 (20135536)

Project Period (FY) 2007 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2007: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Keywords酸化物半導体 / 深紫外線 / 光源 / 検出器 / 結晶成長 / 物性制御 / バルク基板 / 酸化ガリウム / MBE成長 / 深紫外光領域 / 発光デバイス / 光検出器 / パワー電子デバイス / ステップフロー成長 / 多層構造
Research Abstract

We aimed at developing new semiconductor-based LEDs, which may lead to brighter and cheaper LED bulbs. The results suggested the requirement of further efforts from the more basic points of views, but the evolution is positively expected. On the other hand, this semiconductor was found to be promising for new devices supporting our secure and safe life, for example, those monitoring ultrasonic sanitization processes for water or foods and those detecting fire at the earliest stage with flame monitoring.

Report

(4 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (47 results)

All 2009 2008 2007 Other

All Journal Article (16 results) (of which Peer Reviewed: 16 results) Presentation (24 results) Remarks (3 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] ワイドギャップ酸化ガリウム半導体2009

    • Author(s)
      藤田静雄、大島孝仁、金子健太郎
    • Journal Title

      応用物理 78(12)

      Pages: 1150-1154

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] β-Al2xGa2-2xO3 thin film growth by molecular beam epitaxy2009

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, Y. Kobayashi,, S. Fujita
    • Journal Title

      Jpn. J. Appl. Phys. 48(7)

    • NAID

      40016664119

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Wet etching of β-Ga2O3 substrates2009

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, Y. Kobayashi,, S. Fujita
    • Journal Title

      Jpn. J. Appl. Phys. 48(4)

    • NAID

      40016559574

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Flame detection by a β-Ga2O3-based sensor2009

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, N. Suzuki, H. Hino,, S. Fujita
    • Journal Title

      Jpn. J. Appl. Phys. 48(1)

    • NAID

      40016425921

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Wet etching of β-Ga_2O_3 substrates2009

    • Author(s)
      Takayoshi Oshima
    • Journal Title

      Japanese Journal of Applied Physics 48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of highly crystalline corundum-structured α-(Ga_<1-x>Fe_x)_2O_3 alloy thin films on sapphire substrates2009

    • Author(s)
      Kentaro Kaneko
    • Journal Title

      Applied Physics Express 2

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] β-Al_<2x>Ga_<2-2x>O_3 thin film growth by molecular beam epitaxy2009

    • Author(s)
      Takayoshi Oshima
    • Journal Title

      Japanese Journal of Applied Physics 48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] ワイドギャップ酸化ガリウム半導体2009

    • Author(s)
      藤田静雄
    • Journal Title

      応用物理 78

      Pages: 1150-1154

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Flame detection by a β-Ga_2O_3-based sensor2009

    • Author(s)
      Takayoshi Oshima
    • Journal Title

      Japanese Journal of Applied Physics 48

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Properties of Ga2O3-based (InxGa1-x)2O3 alloy thin films grown by molecular beam epitaxy2008

    • Author(s)
      T. Oshima, S. Fujita
    • Journal Title

      Phys. Stat. Solidi (c) 5(9)

      Pages: 3113-3115

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga2O3 substrates2008

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira,, S. Fujita
    • Journal Title

      Appl. Phys. Express 1(1)

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Properties of Ga_2O_3-based (In_xGa_<1-x>)_2O_3 alloy thin films grown by molecular beam epitaxy2008

    • Author(s)
      Takayoshi Oshima
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 3113-3115

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hetero-epitaxy of corundum-structured α-Ga_2O_3 thin films on α-Al_2O_3 substrates by ultrasonic mist chemical vapor deposition2008

    • Author(s)
      Daisuke Shinohara
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 7311-7313

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga2O3 substrates2008

    • Author(s)
      Takayoshi Oshima
    • Journal Title

      Applied Physics Express 1

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors2007

    • Author(s)
      T. Oshima, T. Okuno, S. Fujita
    • Journal Title

      Jpn. J. Appl. Phys. 46(11)

      Pages: 7217-7220

    • NAID

      40015705085

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet2007

    • Author(s)
      Takayoshi Oshima
    • Journal Title

      Japanese Journal of Applied Physics 46

      Pages: 7217-7220

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] Wide bandgap oxide semiconductors for novel functions and applications2009

    • Author(s)
      Shizuo Fujita
    • Organizer
      216th Electrochemical Society Meeting
    • Place of Presentation
      Vienna, Austria
    • Year and Date
      2009-10-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] ワイドバンドギャップ酸化物半導体・-Ga_2O_3を用いた炎センサ2009

    • Author(s)
      大島孝仁
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] コランダム構造を持つ新しいa型Ga_2O_3-Fe_2O_3-Cr_2O_3混晶系2009

    • Author(s)
      金子健太郎
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Al_<2x>Ga_<2-2x>O_3 thin film growth by molecular beam epitaxy2009

    • Author(s)
      大島孝仁
    • Organizer
      36th Int.Symp.Compound Semiconductors
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2009-08-31
    • Related Report
      2009 Annual Research Report
  • [Presentation] Corundum-structured α-Ga_2O_3-Fe_2O_3-Cr_2O_3 alloy system for novel functions2009

    • Author(s)
      金子健太郎
    • Organizer
      36th Int.Symp.Compound Semiconductors
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2009-08-31
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ultraviolet optical functions of oxide semiconductors2009

    • Author(s)
      S. Fujita
    • Organizer
      Asia-Pacific Workshop Wide Gap Semicond.
    • Place of Presentation
      Zhangjiajie, China
    • Year and Date
      2009-05-26
    • Related Report
      2009 Final Research Report
  • [Presentation] Ultraviolet optical functions of oxide semiconductors2009

    • Author(s)
      Shizuo Fujita
    • Organizer
      Asia-Pacific Workshop on Wide Gap Semiconductors 2009
    • Place of Presentation
      Zhangjiajie, China
    • Year and Date
      2009-05-26
    • Related Report
      2009 Annual Research Report
  • [Presentation] Patterning ofβ-Ga2O3 for device fabrication2009

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, Y. Kobayashi, , S. Fujita
    • Organizer
      6th Int. Symp. Transparent Oxide Thin Films for Electronics and Optics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-04-16
    • Related Report
      2009 Final Research Report
  • [Presentation] Solar-blind photodetector based onβ-Ga2O3 and its application to a flame sensor2009

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, S. Takeda, Y. Kobayashi, H. Hino, , S. Fujita
    • Organizer
      6th Int. Symp. Transparent Oxide Thin Films for Electronics and Optics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-04-16
    • Related Report
      2009 Final Research Report
  • [Presentation] Solar-blind photodetector based on β-Ga_2O_3 and its application to a flame sensor2009

    • Author(s)
      大島孝仁
    • Organizer
      6th Int.Symp.Transparent Oxide Thin Films for Electronics and Optics
    • Place of Presentation
      東京
    • Year and Date
      2009-04-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Patterning of β-Ga_2O_3 for device fabrication2009

    • Author(s)
      大島孝仁
    • Organizer
      6th Int.Symp.Transparent Oxide Thin Films for Electronics and Optics
    • Place of Presentation
      東京
    • Year and Date
      2009-04-16
    • Related Report
      2009 Annual Research Report
  • [Presentation] Potentially high breakdown field inβ-Ga2O3 semiconductors2008

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, , S. Fujita
    • Organizer
      IEEE Nanotech. Mater. and Devices Conf.
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2008-10-21
    • Related Report
      2009 Final Research Report
  • [Presentation] β-Al2xGa2-2xO3 thin film growth by molecular beam epitaxy2008

    • Author(s)
      T. Oshima, T. Okuno, N. Arai, Y. Kobayashi, S. Fujita
    • Organizer
      36th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2008-08-31
    • Related Report
      2009 Final Research Report
  • [Presentation] Ultraviolet optical functions of ZnO and Ga2O3 thin films2008

    • Author(s)
      S. Fujita
    • Organizer
      SPIE Optics+Photonics
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2008-08-14
    • Related Report
      2009 Final Research Report
  • [Presentation] Wide band gap gallium oxide semiconductors with deep ultraviolet optical functions2008

    • Author(s)
      S. Fujita, T. Oshima, D. Shinohara, , T. Okuno
    • Organizer
      Int, Conf. Electronic Materials
    • Place of Presentation
      Sydney, Australia
    • Year and Date
      2008-07-28
    • Related Report
      2009 Final Research Report
  • [Presentation] Deep UV detectors with a novel Ga_2O_3 semiconductor2008

    • Author(s)
      Takayoshi Oshima
    • Organizer
      50th Electronic Materials Conference
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2008-06-27
    • Related Report
      2008 Annual Research Report
  • [Presentation] Deep UV detectors with a novel Ga2O3 semiconductor2008

    • Author(s)
      T. Oshima, N. Arai, N. Suzuki, S. Ohira, , S. Fujita
    • Organizer
      50th Electron. Mater. Conf.
    • Place of Presentation
      Santa Barbara, USA
    • Year and Date
      2008-06-26
    • Related Report
      2009 Final Research Report
  • [Presentation] 分子線エピタキシー法によるβ-Ga2O3基板上へのβ-Ga2O3ステップフロー成長2008

    • Author(s)
      大島孝仁
    • Organizer
      2008年春季第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-28
    • Related Report
      2007 Annual Research Report
  • [Presentation] β-Ga2O3基板を利用した深紫外光検出器2008

    • Author(s)
      大島孝仁
    • Organizer
      2008年春季第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-28
    • Related Report
      2007 Annual Research Report
  • [Presentation] Properties of wide bandgap β-Ga2O3 semiconductors grown by molecular beam epitaxy2007

    • Author(s)
      Takayoshi Oshima
    • Organizer
      34th Int. Symp. Compound Semiconductors
    • Place of Presentation
      京都
    • Year and Date
      2007-10-17
    • Related Report
      2007 Annual Research Report
  • [Presentation] Properties of wide bandgapβ-Ga2O3 semiconductors grown by molecular beam epitaxy2007

    • Author(s)
      T. Oshima, N. Suzuki, N. Arai, S. Ohira, , S. Fujita
    • Organizer
      34th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2007-10-15
    • Related Report
      2009 Final Research Report
  • [Presentation] Homoepitaxial step-flow growth ofβ-Ga2O3 thin films by molecular beam epitaxy2007

    • Author(s)
      T. Oshima, N. Arai, S. Ohira, , S. Fujita
    • Organizer
      14th Int. Workshop on Oxide Electronics
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2007-10-09
    • Related Report
      2009 Final Research Report
  • [Presentation] Homoepitaxial step-flow growth of β-Ga2O3 thin films by molecular beam epitaxy2007

    • Author(s)
      Takayoshi Oshima
    • Organizer
      14th Int. Workshop on Oxide Electronics
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2007-10-09
    • Related Report
      2007 Annual Research Report
  • [Presentation] MBE growth and characterization of Ga2O3 and (InGa)2O3 films with ultraviolet optical functions2007

    • Author(s)
      T. Oshima, T. Okuno, , S. Fujita
    • Organizer
      49th Electron. Mater. Conf.
    • Place of Presentation
      Note Dame, USA
    • Year and Date
      2007-06-22
    • Related Report
      2009 Final Research Report
  • [Remarks] 高感度炎(深紫外光)センサのテレビ放映TUFテレビュー福島「E!気分」2009年5月18日

    • Related Report
      2009 Final Research Report
  • [Remarks] 高感度炎(深紫外光)センサの新聞報道、朝日新聞2009年1月23日、京都新聞2009年1月23日、毎日新聞2009年1月26日、日本経済新聞2009年2月2日

    • Related Report
      2009 Final Research Report
  • [Remarks] 高感度炎(深紫外光)センサのプレスリリース(京都大学ホームページ)2009年1月22日

    • URL

      http://www.kyoto-u.ac.jp/ja/news_data/h/h1/news6/2008/090122_1.htm

    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] 紫外線用フォトディテクタ、およびその製造方法2007

    • Inventor(s)
      大平重男、新井直樹、大島孝仁、藤田静雄
    • Industrial Property Rights Holder
      日本軽金属株式会社、京都大学
    • Industrial Property Number
      2007-301234
    • Filing Date
      2007-11-21
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] 酸化ガリウム基板用電極の製造方法及びそれにより製造される酸化ガリウム基板用電極2007

    • Inventor(s)
      大平重男、鈴木悟仁、新井直樹、大島孝仁、藤田静雄
    • Industrial Property Rights Holder
      日本軽金属株式会社、京都大学
    • Industrial Property Number
      2007-301235
    • Filing Date
      2007-11-21
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] 特許2007

    • Inventor(s)
      大平重男, ほか3名
    • Industrial Property Rights Holder
      日本軽金属京都大学
    • Industrial Property Number
      2007-301234
    • Filing Date
      2007-11-21
    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] 特許2007

    • Inventor(s)
      大平重男, ほか4名
    • Industrial Property Rights Holder
      日本軽金属京都大学
    • Industrial Property Number
      2007-301235
    • Filing Date
      2007-11-21
    • Related Report
      2007 Annual Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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