Development of new method of crystal growth using dynamic electromagnetic force
| Project/Area Number |
19360012
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
KAKIMOTO Koichi Kyushu University, 応用力学研究所, 教授 (90291509)
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| Co-Investigator(Kenkyū-buntansha) |
KANGAWA Yoshihiro 九州大学, 応用力学研究所, 准教授 (90327320)
LIU Lijun 九州大学, 応用力学研究所, 研究員 (00380535)
KANGAWA Yoshihiro 九州大学, 応用力学研究所, 技術職員 (80423557)
UDA Satoshi 東北大学, 金属材料研究所, 教授 (90361170)
HUANG Xinming 東北大学, 金属材料研究所, 准教授 (80375104)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2009: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2008: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2007: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
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| Keywords | 電磁場 / 結晶成長 / Si / SiC / シリコン / 3次元解析 |
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| Research Abstract |
We developed new methods of crystal growth of silicon and SiC by using external electro-magnetic fields. The study focused on the crystal growth methods of liquid phase epitaxy and sublimation method. We clarified how gas pressure in a furnace during crystal growth in a furnace for sublimation growth affects growth velocity of SiC. Furthermore, we studied the effects on frequency on flow of the solution in liquid phase epitaxy method.
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Report
(4 results)
Research Products
(65 results)
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[Journal Article]2009
Author(s)
P.Rudolph, et al
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Journal Title
Crystal Growth from the Melt under External Force Fields(MRS BULLETIN)
Pages: 251-258
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