Structural study of superconductive boron under high pressure

• Project/Area Number: 19540380
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Condensed matter physics II
• Research Institution: Okayama University of Science
• Principal Investigator: MORI Yoshihisa Okayama University of Science, 理学部, 准教授 (00258211)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2009: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2008: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2007: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: 分子性固体 / 有機導体 / 超伝導 / 高圧 / ボロン / 高圧X線回折 / 構造相転移 / 体積弾性率 / 状態方程式

Research Abstract

The X-ray diffraction studies of α-boron and B_4C under high-pressure beyond 200 GPa were carried out by using the synchrotron radiation source at SPring-8 or Photon Factory. The data were analyzed by the Rietveld method to determine the crystal structure including the atomic position and by the DV-Xα method to determine the electronic structure under pressure. We obtained the relation between the crystal and/or electronic structure and the superconductivity. On the other hand, α-boron was sintered under pressure at high temperature by the technique of laser heated diamond anvil cell.

Research Products

• [Journal Article] Crystal structure and energy gap of Ba1-xSrxSi2 (x= 0. 20 and 0. 41) (2010)
  • Author(s): M. Imai, A. Sato, T. Aoyagi, T. Kimura, Y. Mori
  • Journal Title: Intermetallics 18 Pages: 548-552
  • Peer Reviewed
• [Journal Article] Crystal structure and energy gap of Ba_<1-x>SrxSi_2(x=0.20 and 0.41) (2010)
  • Author(s): M.Imai, (他4名)
  • Journal Title: Intermetallics 18 Pages: 548-552
  • Peer Reviewed
• [Journal Article] X-ray diffraction study of B_4C under high pressure (2010)
  • Author(s): T.Fujii, (他3名)
  • Journal Title: J.Phys.Conf.Ser.
  • Peer Reviewed
• [Journal Article] The local structure ofα-FeSi2 under high pressure (2009)
  • Author(s): Y. Mori, (他5名)
  • Journal Title: phys. stat. Sol. (b) 246 Pages: 541-543
  • Peer Reviewed
• [Journal Article] The local structure of α-FeSi_2 under high pressure (2009)
  • Author(s): Y.Mori, (他5名)
  • Journal Title: Phys.Stat.Sol.(b) 246 Pages: 541-543
  • Peer Reviewed
• [Journal Article] X-ray study of amorphous phase of BaSi2 under high-pressure (2007)
  • Author(s): T. Nishii, T. Mizuno, Y. Mori, (他3名)
  • Journal Title: phys. stat. sol. (b) 244 Pages: 270-273
  • Peer Reviewed
• [Journal Article] Pressure-induced Phase Transition of Co-doped ZnO (2007)
  • Author(s): Y. Mori, (他8名)
  • Journal Title: phys. stat. sol. (b) 244 Pages: 234-238
  • Peer Reviewed
• [Presentation] B_4Cにおける高圧下での微細構造変化 (2010)
  • Author(s): 藤井竜也, (他4名)
  • Organizer: 日本物理学会
  • Place of Presentation: 東京
  • Year and Date: 2010-03-30
• [Presentation] αボロンの高温高圧合成の可能性II (2010)
  • Author(s): 藤井竜也, 江尻昌平, 廣川裕規, 森嘉久
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山市
  • Year and Date: 2010-03-22
• [Presentation] B4Cにおける高圧下での微細構造変化(2) (2010)
  • Author(s): 藤井竜也, 江尻昌平, 廣川裕規, 森嘉久, (他2名)
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山市
  • Year and Date: 2010-03-22
• [Presentation] αボロンの高温高圧合成の可能性II (2010)
  • Author(s): 藤井竜也, (他3名)
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山
  • Year and Date: 2010-03-22
• [Presentation] B_4Cにおける高圧下での微細構造変化(2) (2010)
  • Author(s): 藤井竜也, (他4名)
  • Organizer: 日本物理学会
  • Place of Presentation: 岡山
  • Year and Date: 2010-03-22
• [Presentation] αボロンの高温高圧合成 (2010)
  • Author(s): Y.Mori, (他2名)
  • Organizer: 第27回PFシンポジウム
  • Place of Presentation: つくば
  • Year and Date: 2010-03-09
• [Presentation] X-ray diffraction study of B4C under high pressure (2009)
  • Author(s): T. Fujii, Y. Mori, (他2名)
  • Organizer: 22nd Int. Association for the Advancement of High Pres. Sci. And Tech.
  • Place of Presentation: Tokyo(Japan)
  • Year and Date: 2009-07-28
• [Presentation] X-ray diffraction study of B_4C under high pressure (2009)
  • Author(s): 藤井竜也, (他3名)
  • Organizer: AIRAPT-22(22nd Int.Association for the Advancement of High Pressure Science and Technology)
  • Place of Presentation: Tokyo(JAPAN)
  • Year and Date: 2009-07-28
• [Presentation] B4Cにおける高圧下での微細構造変化 (2009)
  • Author(s): 藤井竜也, 南慶典, 森嘉久, (他2名)
  • Organizer: 日本物理学会
  • Place of Presentation: 東京都
  • Year and Date: 2009-03-30
• [Presentation] B4Cの高圧X線回折実験 (2008)
  • Author(s): 森嘉久, (他5名)
  • Organizer: 日本高圧力学会
  • Place of Presentation: 姫路市
  • Year and Date: 2008-11-13
• [Presentation] α-Boronの高温高圧合成の可能性 (2008)
  • Author(s): 藤井竜也, 南慶典, 中野弘子, 古賀久美子, 志田謙嗣, 長山周平, 廣澤美樹, 村上一成, 森嘉久, (他3名)
  • Organizer: 日本高圧力学会
  • Place of Presentation: 姫路市
  • Year and Date: 2008-11-13
• [Presentation] 高圧下におけるB4Cの結晶構造 (2008)
  • Author(s): 森嘉久, (他2名)
  • Organizer: 日本物理学会
  • Place of Presentation: 盛岡市
  • Year and Date: 2008-09-22
• [Presentation] αボロンの高温高圧合成の可能性(2) (2008)
  • Author(s): 藤井竜也, 南慶典, 森嘉久, (他3名)
  • Organizer: 日本物理学会
  • Place of Presentation: 盛岡市
  • Year and Date: 2008-09-22
• [Presentation] Charge density ofα-Boron under high pressure (2008)
  • Author(s): Y. Fujii, T. Fujii, Y. Mori, (他2名)
  • Organizer: 16th Int. Symp. on Boron, Borides and Related Mater.
  • Place of Presentation: Matsue (Japan)
  • Year and Date: 2008-09-09
• [Presentation] X-ray diffraction study ofα- Boron up to 200 GPa (2008)
  • Author(s): Y. Mori, (他4名)
  • Organizer: 13th Int. Conf. on High Pres. Semiconductor Physics
  • Place of Presentation: Fortaleza(Brazil)
  • Year and Date: 2008-07-24
• [Presentation] α-Boronにおけるクラスター構造と電子密度の圧力変化 (2008)
  • Author(s): 藤井穣, 藤井暁, 中野弘子, 藤井竜也, 森嘉久, (他4名)
  • Organizer: 日本物理学会
  • Place of Presentation: 東大阪市
  • Year and Date: 2008-03-26
• [Presentation] α-Boronの高温高圧合成の可能性 (2008)
  • Author(s): 藤井竜也, 中野弘子, 藤井暁, 藤井穣, 森嘉久, (他3名)
  • Organizer: 日本物理学会
  • Place of Presentation: 東大阪市
  • Year and Date: 2008-03-26
• [Presentation] α-Boronにおけるクラスター構造と電子密度の圧力変化 (2008)
  • Author(s): 藤井 穣, 森 嘉久, 他7名
  • Organizer: 日本物理学会第43回年次大会(日本物理学会)
  • Place of Presentation: 東大阪
  • Year and Date: 2008-03-23
• [Presentation] Charge density of α-Boron under high pressure (2008)
  • Author(s): Y. Fujii, T. Fujii, Y. Mori, (他2名)
  • Organizer: 16^<th> International Symposium on Boron, Borides and Related Materials
  • Place of Presentation: Matsue(Japan)
• [Presentation] X-ray diffraction study of α-Boron up to 200 GPa (2008)
  • Author(s): Y. Mori, Y. Fujii, H. Hyodo, (他2名)
  • Organizer: 13^<th> International conference on High Pressure Semiconductor Physics
  • Place of Presentation: Fortaleza(Brazil)
• [Presentation] B_4Cの高圧X線回折実験 (2008)
  • Author(s): 森嘉久, 藤井竜也, (他4名)
  • Organizer: 高圧討論会(日本高圧力学会)
  • Place of Presentation: 姫路
• [Presentation] α-Boronの高温高圧合成の可能性 (2008)
  • Author(s): 藤井竜也, 森嘉久, (他10名)
  • Organizer: 高圧討論会(日本高圧力学会)
  • Place of Presentation: 姫路
• [Presentation] 高圧下におけるB_4Cの結晶構造 (2008)
  • Author(s): 森嘉久, 藤井竜也, 南慶典
  • Organizer: 日本物理学会2008年秋季大会(日本物理学会)
  • Place of Presentation: 盛岡
• [Presentation] αボロンの高温高圧合成の可能性(2) (2008)
  • Author(s): 森嘉久, 藤井竜也, (他4名)
  • Organizer: 日本物理学会2008年秋季大会(日本物理学会)
  • Place of Presentation: 盛岡
• [Presentation] α-Boronの高圧下における20面体クラスターの構造変化2 (2007)
  • Author(s): 藤井穣, 藤井暁, 中野弘子, 森嘉久, (他3名)
  • Organizer: 日本高圧力学会
  • Place of Presentation: 倉吉
  • Year and Date: 2007-11-21
• [Presentation] α-Boronの高圧下における20面体クラスターの変化(2) (2007)
  • Author(s): 藤井 穣, 森 嘉久, 他4名
  • Organizer: 高圧討論会(日本高圧力学会)
  • Place of Presentation: 倉吉
  • Year and Date: 2007-11-21
• [Presentation] X-ray diffraction study of α-Boron up to108GPa (2007)
  • Author(s): Y. Fujii, Y. Mori, 他5名
  • Organizer: AIRAPT-45th Intemational Association for the Advancement of High Pressure Science and Technology
  • Place of Presentation: Catania(Italy)
  • Year and Date: 2007-09-18
• [Presentation] X-ray diffraction study ofα-Boron up to 106 GPa (2007)
  • Author(s): Y. Fujii, Y. Mori, (他5名)
  • Organizer: 21st Int. Association for the Advancement of High Pres. Sci. And Tech.
  • Place of Presentation: Catania(Italy)
  • Year and Date: 2007-07-19
• [Patent(Industrial Property Rights)] 移動式の簡易高圧環境観察装置 (2010)
  • Inventor(s): 森嘉久
  • Industrial Property Rights Holder: 森嘉久
  • Industrial Property Number: 2009-192698
  • Acquisition Date: 2010
• [Patent(Industrial Property Rights)] 移動式の簡易高圧環境観察装置 (2009)
  • Inventor(s): 森嘉久
  • Industrial Property Rights Holder: 森嘉久
  • Industrial Property Number: 2009-192698
  • Filing Date: 2009-08-24