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Film formation utilizing bi-layer and (111)-slope on Si (001) substrate

Research Project

Project/Area Number 19569003
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Toyama

Principal Investigator

SAITO Mitsufumi  University of Toyama, 地域連携推進機構・産学連携部門, 研究員 (70452092)

Project Period (FY) 2007 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥2,270,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥1,100,000 (Direct Cost: ¥1,100,000)
Keywordsヘテロエピタキシャル成長 / インジウムアンチモン(InSb) / シリコン(Si) / MBE / InSb / Si
Research Abstract

本研究では、Si基板上における良質なInSb, AlInSb薄膜の形成を目指した。Si基板上での低消費電力高速論理回路のためのInSb-basedデバイス集積化を将来的な目標とする。Si基板とInSb,AlInSb間の大きな格子不整合の問題を解決するために、1)InSb/Si, AlInSb/Si間にInSb単分子層の導入2)Si(001)基板上に傾斜(111)面の形成、を行うことで、従来の直接成長と比べ、薄く品質の良い薄膜形成が可能である事を示した。

Report

(3 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report

Research Products

(34 results)

All 2009 2008 2007 Other

All Journal Article (8 results) (of which Peer Reviewed: 3 results) Presentation (26 results)

  • [Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
    • Journal Title

      e-Journal of Surface Science and Nano Technology Vol.7

      Pages: 145-148

    • NAID

      130004439133

    • Related Report
      2008 Final Research Report
  • [Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009

    • Author(s)
      Masayuki MORI
    • Journal Title

      e-Journal of Surface Science and Nano Technology Vol. 7

      Pages: 145-148

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008

    • Author(s)
      M. Saito, M. Mori, K. Maezawa Appl
    • Journal Title

      Surf. Sci 254

      Pages: 6052-6054

    • Related Report
      2008 Final Research Report
  • [Journal Article] Heteroepitaxial InSb films grown via Si(111)-7x3-In surface reconstruction2008

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
    • Journal Title

      Phys. Stat. Sol (c)5, No.9

      Pages: 2772-2774

    • Related Report
      2008 Final Research Report
  • [Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008

    • Author(s)
      Mitsufumi SAITO
    • Journal Title

      Applied Surface Science 254

      Pages: 6052-6054

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Heteroepitaxial InSb films grown via Si(111)-√7×√3-In surface reconstruction2008

    • Author(s)
      Masayuki MORI
    • Journal Title

      Physica status solidi (c) Vol. 5

      Pages: 2772-2774

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111)substrate

    • Author(s)
      M. Saito, M. Mori, K. Ueda, K. Maezawa
    • Journal Title

      Phys. Stat. Sol.(c)(accepted) : Refereed

    • Related Report
      2008 Final Research Report
  • [Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate

    • Author(s)
      M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Murata, K. Maezawa
    • Journal Title

      e-Journal of Surface Science and Nano Technology (accepted) : Refereed

    • Related Report
      2008 Final Research Report
  • [Presentation] V字型の(111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2009

    • Author(s)
      岩杉 達矢
    • Organizer
      春季第56回応用物理学関係連合講演会
    • Place of Presentation
      茨城県つくば市・筑波大学筑波キャンパス
    • Year and Date
      2009-04-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] InSb単分子層を介したSi(111)基板上のInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      上田 広司
    • Organizer
      平成20年度応用物理学会 北陸・信越支部学術講演会
    • Place of Presentation
      石川県石川郡野々市・金沢工業大学
    • Year and Date
      2008-11-22
    • Related Report
      2008 Annual Research Report
  • [Presentation] V字型の(111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      岩杉 達矢
    • Organizer
      平成20年度応用物理学会 北陸・信越支部学術講演会
    • Place of Presentation
      石川県石川郡野々市・金沢工業大学
    • Year and Date
      2008-11-22
    • Related Report
      2008 Annual Research Report
  • [Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2008

    • Author(s)
      Masayuki MORI
    • Organizer
      5^<th> Internetional Symposium on Surface Science and Nanotechnology (ISSS-5)
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Year and Date
      2008-11-12
    • Related Report
      2008 Annual Research Report
  • [Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008

    • Author(s)
      Mitsufumi SAITO
    • Organizer
      8^<th> Japan-Russia Seminar on Semiconductor Surfaces (TRSSS-8)
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Year and Date
      2008-10-21
    • Related Report
      2008 Annual Research Report
  • [Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008

    • Author(s)
      Masayuki MORI
    • Organizer
      8^<th> Japan-Russia Seminar on Semiconductor Surfaces (TRSSS-8)
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Year and Date
      2008-10-21
    • Related Report
      2008 Annual Research Report
  • [Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008

    • Author(s)
      Mitsufumi SAITO
    • Organizer
      35^<th> International Symposium on Compound Semiconductors (ISCS2008)
    • Place of Presentation
      Europa-Park, Rust, Germany
    • Year and Date
      2008-09-23
    • Related Report
      2008 Annual Research Report
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      中谷公彦、斉藤光史、上田広司、森雅之、前澤宏一
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井市・中部大学
    • Year and Date
      2008-09-04
    • Related Report
      2008 Final Research Report
  • [Presentation] (111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      五十嵐弘樹、森雅之、斉藤光史、岩杉達矢、ノルスルヤティ ビンティ アハマド、前澤宏一
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井市・中部大学
    • Year and Date
      2008-09-04
    • Related Report
      2008 Final Research Report
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      中谷 公彦
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井市・中部大学春日井キャンパス
    • Year and Date
      2008-09-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] (111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      五十嵐 弘樹
    • Organizer
      秋季第69回応用物理学会学術講演会
    • Place of Presentation
      愛知県春日井市・中部大学春日井キャンパス
    • Year and Date
      2008-09-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer2008

    • Author(s)
      Masayuki MORI
    • Organizer
      15^<th> International Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Univ. of British Columbia, Vancouver, Canada
    • Year and Date
      2008-08-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008

    • Author(s)
      斉藤光史、森雅之、上田広司、前澤宏一
    • Organizer
      電気通信学会 電子デバイス研究会
    • Place of Presentation
      石川県金沢市・金沢大学
    • Year and Date
      2008-06-14
    • Related Report
      2008 Final Research Report
  • [Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008

    • Author(s)
      斉藤 光史
    • Organizer
      電気通信学会 電子デバイス研究会
    • Place of Presentation
      石川県金沢市・金沢大学角間キャンパス
    • Year and Date
      2008-06-14
    • Related Report
      2008 Annual Research Report
  • [Presentation] Si(111)-√7×√3-In再構成構造を介したInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      森 雅之
    • Organizer
      電気通信学会 電子デバイス研究会
    • Place of Presentation
      石川県金沢市・金沢大学角間キャンパス
    • Year and Date
      2008-06-14
    • Related Report
      2008 Annual Research Report
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜の成長2008

    • Author(s)
      斉藤光史、森雅之、上田広司、吉田達雄、新村康成、前澤宏一
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市・日本大学 理工学部
    • Year and Date
      2008-03-29
    • Related Report
      2008 Final Research Report
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜成長2008

    • Author(s)
      斉藤 光史
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      千葉県船橋市・日本大学理工学部 船橋キャンパス
    • Year and Date
      2008-03-29
    • Related Report
      2007 Annual Research Report
  • [Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate2008

    • Author(s)
      M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Maezawa
    • Organizer
      5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
    • Place of Presentation
      Waseda University, Tokyo, Japan
    • Related Report
      2008 Final Research Report
  • [Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008

    • Author(s)
      M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
    • Organizer
      8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Related Report
      2008 Final Research Report
  • [Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
    • Organizer
      8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Related Report
      2008 Final Research Report
  • [Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008

    • Author(s)
      M. Saito, M. Mori, K. Ueda, K. Nakatani, K. Maezawa
    • Organizer
      35th International Symposium on Compound Semiconductors (ISCS2008)
    • Place of Presentation
      Europa-Park, Rust, Germany
    • Related Report
      2008 Final Research Report
  • [Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer2008

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura, K. Maezawa
    • Organizer
      15th International Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Univ. of British Columbia, Vancouver, Canada
    • Related Report
      2008 Final Research Report
  • [Presentation] Si(111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長とその結晶性及び配向性の評価2007

    • Author(s)
      長島 恭兵
    • Organizer
      平成19年度応用物理学会 北陸・信越支部 学術講演会
    • Place of Presentation
      富山県富山市・富山大学
    • Year and Date
      2007-11-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] InSb単分子層/Si(111)上へのAlSb層の成長2007

    • Author(s)
      新村康成
    • Organizer
      平成19年度応用物理学会 北陸・信越支部 学術講演会
    • Place of Presentation
      富山県富山市・富山大学
    • Year and Date
      2007-11-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] Effects of In and Sb momo-layers to form rotated InSb films on a Si (111) substrate2007

    • Author(s)
      Mitsufumi SAITO
    • Organizer
      Fifth International Symposium on Control of Semiconductor Interfaces
    • Place of Presentation
      東京都八王子市・首都大学東京
    • Year and Date
      2007-11-13
    • Related Report
      2007 Annual Research Report
  • [Presentation] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2007

    • Author(s)
      M. Saito, M. Mori, K. Maezawa
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
    • Place of Presentation
      Tokyo Metropolitan Univ., Tokyo, Japan
    • Related Report
      2008 Final Research Report

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Published: 2007-03-31   Modified: 2016-04-21  

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