|Budget Amount *help
¥89,310,000 (Direct Cost: ¥68,700,000、Indirect Cost: ¥20,610,000)
Fiscal Year 2011: ¥14,040,000 (Direct Cost: ¥10,800,000、Indirect Cost: ¥3,240,000)
Fiscal Year 2010: ¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2009: ¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
Fiscal Year 2008: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2007: ¥20,410,000 (Direct Cost: ¥15,700,000、Indirect Cost: ¥4,710,000)
Silicon carbide(SiC) has gained considerable attention for power electronics. Among the various types of power devices, metal-oxide-semiconductor(MOS) should become a key component for next generation SiC switching devices. In this study, we investigated fundamental aspects of SiC oxidation and MOS interfaces, and proposed novel methods for improving electrical properties of SiC-MOS devices. We also fabricated MOS transistors with high-permittivity gate dielectrics and successfully demonstrated superior device performance.