Development and application of new kinetic theory for thermal oxidation of silicon replacing the Deal-Grove model
| Project/Area Number |
19686005
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Waseda University |
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Principal Investigator |
WATANABE Takanobu Waseda University, 理工学術院, 准教授 (00367153)
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| Project Period (FY) |
2007 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2010: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2009: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2008: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2007: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
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| Keywords | 表面・界面 / 電気・電子材料 / ナノ構造形成・制御 / 分子動力学法 / 並列計算 / 並列計算機 |
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| Research Abstract |
A new general rate equation for thermal oxidation of silicon was formulated. The rate equation is applicable to oxidation processes in dry and wet oxygen ambient, and explains a long-pending problem of a nonlinear oxygen pressure dependency observed in the dry oxidation. Atomistic structures of silicon oxide and germanium oxide films were modeled by means of molecular dynamics, through which the structural relaxation mechanism, diffusion behavior of oxidant molecules, stress distribution, heat transport and phonon mode decay processes are investigated.
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Report
(6 results)
Research Products
(80 results)
