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Development of selective strain controlling technique in Silicon Germanium hetero-structures

Research Project

Project/Area Number 19760011
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionMusashi Institute of Technology

Principal Investigator

SAWANO Kentarou  Musashi Institute of Technology, 工学部, 講師 (90409376)

Project Period (FY) 2007 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥3,380,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2007: ¥2,600,000 (Direct Cost: ¥2,600,000)
KeywordsSiGe / 歪み / イオン注入法
Research Abstract

これまで半導体技術は素子の縮小化によって発展を遂げてきたが、近年その縮小化に物理的限界が近づき、新たな技術革新が必須となっている。その中で、シリコン(Si)に結晶歪みを加えた「歪みSi」チャネルが実デバイスに導入されるに至った。今後のさらなるLSIの発展に向けて、この「歪み」の役割がますます高まることは必至であり、歪み制御技術の高度化、新技術開発は最重要かつ不可欠な課題である。本研究では、これまでとは全く異なる新手法を用いた歪みの制御技術開発を行った。具体的には、イオン注入法による選択的欠陥導入を行い、SiGe層における歪み場分布の面内任意制御および異方性歪み場を実現することに成功した。

Report

(3 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report
  • Research Products

    (30 results)

All 2009 2008 2007

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (19 results)

  • [Journal Article] Local Control of Strain in SiGe by Ion Implantation Technique2009

    • Author(s)
      K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami , K. Nakagawa, Y. Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 806-808

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method2009

    • Author(s)
      Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa, Y. Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 825-828

    • Related Report
      2008 Annual Research Report 2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions2008

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
    • Journal Title

      Thin Solid Films 517

      Pages: 87-89

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique2008

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
    • Journal Title

      Thin Solid Films 517

      Pages: 353-355

    • Related Report
      2008 Annual Research Report 2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation2008

    • Author(s)
      Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki
    • Journal Title

      Applied Physics Express 1

      Pages: 121401-121401

    • NAID

      10025083624

    • Related Report
      2008 Annual Research Report 2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions2008

    • Author(s)
      K. Sawano, A. Fukumoto, Y Hoshi, J. Yamanaka, K. Nakagawa, and Y Shiraki
    • Journal Title

      Thin Solid Films 517

      Pages: 87-89

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Local Control of Strain in SiGe by Ion Implantation Technique2008

    • Author(s)
      K. Sawano, Y. Hoshi, Y Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 806-808

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strained-Si n-channel metal-oxide-semiconductor field-effect-transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique2007

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, and K. Nakagawa
    • Journal Title

      Appl. Phys. Lett 90

      Pages: 202101-202101

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique2007

    • Author(s)
      K. Sawano, Y. Shiraki, and K. Nakagawa
    • Journal Title

      ECS Transaction 11

      Pages: 75-75

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Strained-Si n-channel metal-oxide-semiconductor field-effect-transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique2007

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, K. Nakagawa
    • Journal Title

      Applied Physics Letters 90

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique2007

    • Author(s)
      K. Sawano, Y. Shiraki, K. Nakagawa
    • Journal Title

      ECS Transaction 11

      Pages: 75-89

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] 選択的イオン注入により作製したSiGe層における一軸性歪みの観測2008

    • Author(s)
      山田淳矩,澤野憲太郎,星裕介,平岡良康,宇佐美徳隆,中川清和,白木靖寛
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Final Research Report
  • [Presentation] Siイオン注入法により作製されたSiGeバッファー層の歪緩和過程2008

    • Author(s)
      星裕介,澤野憲太郎,平岡良康,山田淳矩,宇佐美徳隆,中川清和,白木靖寛
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report 2008 Final Research Report
  • [Presentation] Fabrication of thin strain-relaxed SiGe buffer layers with high-Ge composition by ion implantation method2008

    • Author(s)
      Y. Hoshi, K. Sawano, Y. Hiraoka, N. Usami, K. Nakagawa, and Y. Shiraki
    • Organizer
      4th Asian Conference on Crystal Growth and Crystal Technology
    • Place of Presentation
      (CGCT-4), Sendai
    • Related Report
      2008 Final Research Report
  • [Presentation] Local Control of Strain in SiGe by Ion Implantation Technique2008

    • Author(s)
      K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
    • Organizer
      4th Asian Conference on Crystal Growth and Crystal Technology
    • Place of Presentation
      (CGCT-4), Sendai
    • Related Report
      2008 Final Research Report
  • [Presentation] Local Strain Control of SiGe by Selective Ion Implantation Technique2008

    • Author(s)
      K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki, N. Usami, and K. Nakagawa
    • Organizer
      4th International SiGe Technology and Device Meeting (ISTDM) 2008
    • Place of Presentation
      Taiwan
    • Related Report
      2008 Final Research Report
  • [Presentation] Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method2008

    • Author(s)
      Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro Shiraki, Noritaka Usami, and Kiyokazu Nakagawa
    • Organizer
      4th International SiGe Technology and Device Meeting (ISTDM) 2008
    • Place of Presentation
      Taiwan
    • Related Report
      2008 Final Research Report
  • [Presentation] 選択的イオン注入法によるSiGe層の面内歪み制御2008

    • Author(s)
      平岡良康,星裕介,河南信治,澤野憲太郎,中川清和,宇佐美徳隆,白木靖寛
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学(千葉)
    • Related Report
      2008 Final Research Report 2007 Annual Research Report
  • [Presentation] Local Strain Control of SiGe by Selective Ion Implantation Technique2008

    • Author(s)
      K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki, N. Usami, and K. Nakagawa
    • Organizer
      4th International SiGe Technology and Device Meeting (ISTDM) 2008
    • Place of Presentation
      台湾、新竹
    • Related Report
      2008 Annual Research Report
  • [Presentation] Local Control of Strain in SiGe by Ion Implantation Technique2008

    • Author(s)
      K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
    • Organizer
      4th Asian Conference on Crystal Growth and Crystal Technology
    • Place of Presentation
      4th Asian Conference on Crystal Growth and Crystal Technology
    • Related Report
      2008 Annual Research Report
  • [Presentation] Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method2008

    • Author(s)
      Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro Shiraki, No ritaka Usami, and Kivokazu Nakagawa
    • Organizer
      4th International SiGe Technology and Device Meeting (ISTDM) 2008
    • Place of Presentation
      台湾、新竹
    • Related Report
      2008 Annual Research Report
  • [Presentation] Fabrication of thin strain-relaxed SiGe buffer layers with high-Ge comp osition by ion implantation method2008

    • Author(s)
      Y. Hoshi, K. Sawano, Y. Hiraoka, N. Usami, K. Nakagawa, and Y. Shiraki
    • Organizer
      4th Asian Conference on Crystal Growth and Crystal Technology
    • Place of Presentation
      東北大学 (仙台)
    • Related Report
      2008 Annual Research Report
  • [Presentation] 選択的イオン注入により作製したsiGe層における-軸性歪みの観測2008

    • Author(s)
      山田淳矩, 澤野憲太郎, 星裕介, 平岡良康, 宇佐美徳隆, 中川清和, 白木靖寛
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique2007

    • Author(s)
      K. Sawano, Y. Shiraki, and K. Nakagawa
    • Organizer
      The 212th Meeting of the Electrochemical Society, ULSI Process Integration 5 (招待講演)
    • Place of Presentation
      Washington DC, USA
    • Related Report
      2008 Final Research Report
  • [Presentation] イオン注入法により作製した薄膜SiGe緩和層上の歪みSi-nMOSFET2007

    • Author(s)
      澤野憲太郎、福本敦之、星裕介、中川清和、白木靖寛
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2008 Final Research Report 2007 Annual Research Report
  • [Presentation] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions2007

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
    • Place of Presentation
      Marseille, France
    • Related Report
      2008 Final Research Report
  • [Presentation] Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique2007

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
    • Place of Presentation
      Marseille, France
    • Related Report
      2008 Final Research Report
  • [Presentation] Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions2007

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
    • Place of Presentation
      フランス、マルセイユ
    • Related Report
      2007 Annual Research Report
  • [Presentation] Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique2007

    • Author(s)
      K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
    • Place of Presentation
      フランス、マルセイユ
    • Related Report
      2007 Annual Research Report
  • [Presentation] Fabrication of SiGe Virtual Substrates by Ion Implantation Technique2007

    • Author(s)
      K. Sawano, Y. Shiraki, and K. Nakagawa
    • Organizer
      The 212th Meeting of the Electrochemical Society, ULSI Process Integration 5
    • Place of Presentation
      ワシントンDC
    • Related Report
      2007 Annual Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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