Domain wall motion devices by controlling spin current distribution
| Project/Area Number |
19760210
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Ibaraki University |
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Principal Investigator |
KOMINE Takashi Ibaraki University, 工学部, 准教授 (90361287)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥2,460,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥360,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2007: ¥900,000 (Direct Cost: ¥900,000)
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| Keywords | スピン流分布 / マイクロマグネティックス / 磁性ナノワイヤ / 磁壁移動 / 微細加工 / スピン流 / 磁性体形状 |
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| Research Abstract |
We developed the micromagnetic simulation including non-uniform spin current distribution, and investigated current-induced domain wall motion in a nanowire. As a result, in an in-plane magnetization nanowire, the influences of notch shape and pulse current on the critical current density driving domain wall motion were clarified. Moreover, the multi-bit motion in a nanowire with perpendicular magnetic anisotropy was demonstrated, and a new issue to realize a nanowire memory was suggested.
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Report
(4 results)
Research Products
(70 results)
