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Identification of defects degrading SiC device performance by the excess carrier lifetime mapping with micrometer resolution

Research Project

Project/Area Number 19760215
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionNagoya Institute of Technology

Principal Investigator

KATO Masashi  Nagoya Institute of Technology, 大学院・工学研究科, 准教授 (80362317)

Project Period (FY) 2007 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥3,830,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2007: ¥2,400,000 (Direct Cost: ¥2,400,000)
Keywords作成 / 評価技術 / SiC / 過剰キャリアライフタイム / 評価 / 欠陥 / Sic
Research Abstract

We have developed an excess carrier lifetime mapping system with micrometer resolution for identification of defects degrading device performance in silicon carbide. As a result, although we have obtained excess carrier lifetime maps for silicon samples, further improvement of the system has been required to obtain excess carrier lifetime maps for silicon carbide. On the other hand, by characterizing excess carrier lifetime in p-type silicon carbide with various defects concentration, we have found that carbon-related defects have impact on the excess carrier lifetime in p-type silicon carbide.

Report

(4 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (16 results)

All 2010 2009 2008 2007

All Journal Article (6 results) (of which Peer Reviewed: 4 results) Presentation (10 results)

  • [Journal Article] Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method2010

    • Author(s)
      Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
    • Journal Title

      Materials Science Forum Vol.645-648

      Pages: 207-210

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconduc tivity decay method2010

    • Author(s)
      Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
    • Journal Title

      Materials Science Forum 645-648

      Pages: 207-210

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] マイクロ波光導電減衰法によるp型4H-SiCエピタキシャル膜の評価2008

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮、大島武
    • Journal Title

      信学技報 Vol.108-34

      Pages: 95-100

    • NAID

      110006862294

    • Related Report
      2009 Final Research Report
  • [Journal Article] マイクロ波光導電減衰法によるp型4H-SiCエピタキシャル膜の評価2008

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮、大島武
    • Journal Title

      信学技報 108-34

      Pages: 95-100

    • NAID

      110006862294

    • Related Report
      2008 Annual Research Report
  • [Journal Article] Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method2007

    • Author(s)
      Masashi Kato, Masahiko Kawai, Tatsuhiro Mori, Masaya Ichimura, Shingo Sumie, Hidehisa Hashizume
    • Journal Title

      Japanese Journal of Applied Physics Vol.46

      Pages: 5057-5061

    • NAID

      40015538130

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method2007

    • Author(s)
      Masashi Kato, Masahiko Kawai, Tatsuhiro Mori, Masaya Ichimura, Shingo Sumie, and Hidehisa Hashizume
    • Journal Title

      Japanese Journal of Applied Physics 46

      Pages: 5057-5061

    • NAID

      40015538130

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] 電子線照射を施したp型4H-SiCエピ膜における熱処理後の過剰キャリアライフタイム2010

    • Author(s)
      加藤正史、松下由憲、市村正也、畑山智亮、大島武
    • Organizer
      2010年春季第57回応用物理学関連連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report 2009 Final Research Report
  • [Presentation] CHARACTERIZATION OF P-TYPE 4H-SiC EPILAYERS BY THE MICROWAVE PHOTOCONDUCTIVITY DECAY METHOD2010

    • Author(s)
      Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA
    • Organizer
      14th National Seminar on Crystal Growth
    • Place of Presentation
      インド、ベロール
    • Year and Date
      2010-03-11
    • Related Report
      2009 Final Research Report
  • [Presentation] CHARACTERIZATION OF P-TYPE 4H-SiC EPILAYERS BY THE MICR OWAVE PHOTOCONDUCTIVITY DECAY METHOD2010

    • Author(s)
      Yoshinori MATSUSHITA, Masashi KATO, Masava ICHIMURA
    • Organizer
      14^<th> National Seminar on Crystal Growth
    • Place of Presentation
      インド、ベロール
    • Year and Date
      2010-03-11
    • Related Report
      2009 Annual Research Report
  • [Presentation] Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method2009

    • Author(s)
      Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2009
    • Place of Presentation
      ドイツ、ニュルンベルク
    • Year and Date
      2009-10-12
    • Related Report
      2009 Final Research Report
  • [Presentation] Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconduc tivity decay method2009

    • Author(s)
      Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
    • Organizer
      International Conference on Silicon Carbide and Related Materials 2009
    • Place of Presentation
      ドイツ、ニュルンベルク
    • Year and Date
      2009-10-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] P型4H-SiCエピタキシャル膜の過剰キャリア減衰曲線の解析2008

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮、大島武
    • Organizer
      SiC及び関連ワイドギャップ半導体研究会第17回講演会
    • Place of Presentation
      大田区産業プラザ
    • Year and Date
      2008-12-08
    • Related Report
      2009 Final Research Report 2008 Annual Research Report
  • [Presentation] 様々な欠陥濃度を有するp型4H-SiCエピタキシャル膜の過剰キャリア減衰曲線の評価2008

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮、大島武
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Related Report
      2009 Final Research Report 2008 Annual Research Report
  • [Presentation] マイクロ波光導電減衰法によるp型4H-SiCエピタキシャル膜の評価2008

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮、大島武
    • Organizer
      電子情報通信学会ED2008
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2008-05-16
    • Related Report
      2009 Final Research Report 2008 Annual Research Report
  • [Presentation] p型4H-SiCエピタキシャル膜の過剰キャリア減衰曲線の評価2007

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮
    • Organizer
      SiC及び関連ワイドギャップ半導体研究会第16回講演会
    • Place of Presentation
      愛知県女性総合センター
    • Year and Date
      2007-11-29
    • Related Report
      2009 Final Research Report
  • [Presentation] p型4H-SiCエピタキシャル幕の過剰キャリア減衰曲線の評価2007

    • Author(s)
      松下由憲、加藤正史、市村正也、畑山智亮
    • Organizer
      SiC及び関連ワイドギャップ半導体研究会 第16回講演会
    • Place of Presentation
      愛知県女性総合センター
    • Year and Date
      2007-11-29
    • Related Report
      2007 Annual Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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