| Project/Area Number |
19F19353
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 外国 |
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| Review Section |
Basic Section 28020:Nanostructural physics-related
|
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| Research Institution | The University of Tokyo |
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| Host Researcher |
野村 政宏 東京大学, 生産技術研究所, 准教授 (10466857)
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| Foreign Research Fellow |
GUO YANGYU 東京大学, 生産技術研究所, 外国人特別研究員
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| Project Period (FY) |
2019-11-08 – 2022-03-31
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| Project Status |
Granted (Fiscal Year 2020)
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| Budget Amount *help |
¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 2020: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2019: ¥400,000 (Direct Cost: ¥400,000)
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| Outline of Research at the Start |
We plan to establish the non-equilibrium Green function computational framework with anharmonic phonon-phonon scattering taken into account. Heat transport through silicon and germanium thin films as well as Si/Ge interface will be considered in establishing the algorithm. As a first step, we plan to adopt the modified valence force field empirical atomic interaction models for both silicon and germanium. This computational framework will be validated for heat transport through bulk Si and Ge at different temperatures, and heat transport through Si/Ge interface at room temperature.
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