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Creation of ultrawide-bandgap-semiconductor exciton-engineering using deep-ultraviolet time and spatially resolved spectroscopies under extreme environments

Research Project

Project/Area Number 19H02615
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 30010:Crystal engineering-related
Research InstitutionKyoto University

Principal Investigator

Ishii Ryota  京都大学, 工学研究科, 助教 (60737047)

Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2021: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2020: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2019: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
Keywordsフォトルミネッセンス / エレクトロルミネッセンス / 窒化物半導体 / ダイヤモンド / 励起子 / 深紫外分光 / 近接場分光 / 極限環境下分光 / 束縛励起子 / AlGaN / 量子井戸 / 時間分解分光 / 超ワイドギャップ半導体 / 極限環境 / 顕微分光
Outline of Research at the Start

本研究の目的は,超ワイドギャップ半導体における励起子光物性の解明である.この研究目的を達成するために,極限環境下(極低温下・応力下・磁場下)における深紫外時空間分解分光法の利用を提案しているところに本研究の学術的独自性がある.

励起子とは,電子と正孔がクーロン相互作用によって結合した素励起状態のことである.超ワイドギャップ半導体中の励起子は光と強く相互作用するため,高効率発光/受光デバイスの創出が期待されているが実現には至っていない.この背景には,超ワイドギャップ半導体における励起子光物性の理解が不十分であることが問題点として挙げられる.本研究では,この問題点を解決し,励起子工学の創成を目指す.

Outline of Final Research Achievements

This study explored the excitonic properties of ultrawide bandgap semiconductors and the techniques of deep-ultraviolet time and spatially resolved spectroscopies under extreme environments. These include, unveiling that threading dislocations act as non-radiative recombination centers in blue-emitting LEDs at above room temperatures, first observation of deep-ultraviolet band-edge emission from nano-polycrystalline diamond, elucidating the internal quantum efficiency, current injection efficiency, and light extraction efficiency of AlGaN-based deep-ultraviolet LEDs, demonstration of deep-ultraviolet scanning near-field optical microscope with spatial resolution better than 100 nm, resolving the bound excitonic properties of n-type aluminum nitride.

Academic Significance and Societal Importance of the Research Achievements

波長200 nmから300 nmの深紫外光は,浄水やウイルスの不活化,ラベルフリー生体イメージング,および半導体微細加工技術などに大変有用である.超ワイドギャップ半導体は深紫外光源の1つとして注目されているが,現状超ワイドギャップ半導体を用いた深紫外光源の性能は低く留まっている.そこで本研究では,未だ成熟していない深紫外分光の深化とともに,深紫外分光を用いた超ワイドギャップ半導体の光物性解明に取り組み,深紫外光源の高性能化に繋がる超ワイドギャップ半導体の基礎光物性を明らかにすることに成功した.

Report

(5 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Products Report
  • Research Products

    (35 results)

All 2022 2021 2020 2019 Other

All Int'l Joint Research (1 results) Journal Article (18 results) (of which Int'l Joint Research: 6 results,  Peer Reviewed: 17 results,  Open Access: 9 results) Presentation (14 results) (of which Int'l Joint Research: 8 results,  Invited: 4 results) Remarks (1 results) Patent(Industrial Property Rights) (1 results)

  • [Int'l Joint Research] TU Berlin(ドイツ)

    • Related Report
      2021 Annual Research Report
  • [Journal Article] Stimulated emission mechanism of aluminum nitride2022

    • Author(s)
      R. Ishii, T. Nagashima, R. Yamamoto, T. Hitomi, M. Funato, and Y. Kawakami
    • Journal Title

      Phys. Rev. B

      Volume: 105 Issue: 20 Pages: 1-9

    • DOI

      10.1103/physrevb.105.205206

    • Related Report
      Products Report
    • Peer Reviewed
  • [Journal Article] Microscopic origin of thermal droop in blue-emitting InGaN/GaN quantum wells studied by temperature-dependent microphotoluminescence spectroscopy2021

    • Author(s)
      R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
    • Journal Title

      Optics Express

      Volume: 29 Issue: 15 Pages: 22847-22854

    • DOI

      10.1364/oe.428421

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle2021

    • Author(s)
      A. Kafar,A. Sakaki,R. Ishii,K. Shojiki,S. Stanczyk,K. Gibasiewicz,G. Staszczak,L. Marona,D. Schiavon,S. Grzanka,S. Krukowski,T. Suski,P. Perlin,M. Funato,Y. Kawakami
    • Journal Title

      Optical Materials Express

      Volume: 12 Issue: 1 Pages: 119-135

    • DOI

      10.1364/ome.445043

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Impact of the positive electron-hole exchange interaction constant on the binding energy of neutral donor bound excitons in AlN2021

    • Author(s)
      R. Ishii, A. Yoshikawa, H. Kobayashi, M. Funato, and Y. Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 8 Pages: 080901-080901

    • DOI

      10.35848/1347-4065/ac15ae

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction2021

    • Author(s)
      A. Kafar, A. Sakaki, R. Ishii, S. Stanczyk, K. Gibasiewicz, Y. Matsuda, D. Schiavon, S. Grzanka, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
    • Journal Title

      Photonics Research

      Volume: 9 Issue: 3 Pages: 299-307

    • DOI

      10.1364/prj.411701

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Bias-dependent time-resolved photoluminescence spectroscopy on 265-nm AlGaN-based LEDs on AlN substrates2021

    • Author(s)
      R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 2 Pages: 020903-020903

    • DOI

      10.35848/1347-4065/abd91d

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Radiative recombination efficiency of AlGaN quantum wells: do we estimate it accurately in a proper way?2020

    • Author(s)
      Y. Kawakami, M. Funato, and R. Ishii
    • Journal Title

      J. Phys. D: Appl. Phys.

      Volume: 53 Issue: 50 Pages: 503001-503001

    • DOI

      10.1088/1361-6463/aba64c

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] 265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions2020

    • Author(s)
      R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 10 Pages: 102005-102005

    • DOI

      10.35848/1882-0786/abb86f

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes2020

    • Author(s)
      A. Kafar, R. Ishii, K. Gibasiewicz, Y. Matsuda, S. Stanczyk, D. Schiavon, S. Grzanka, M. Tano, A. Sakaki, T. Suski, P. Perlin, M. Funato, and Y. Kawakami
    • Journal Title

      Optics Express

      Volume: 28 Issue: 15 Pages: 22524-22539

    • DOI

      10.1364/oe.394580

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Long-range electron-hole exchange interaction in aluminum nitride2020

    • Author(s)
      R. Ishii, M. Funato, and Y. Kawakami
    • Journal Title

      Physical Review B

      Volume: 102 Issue: 15 Pages: 1-5

    • DOI

      10.1103/physrevb.102.155202

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] エレクトロルミネッセンス・フォトルミネッセンス法によるAlN基板上265nm帯AlGaN LEDの評価2020

    • Author(s)
      石井良太・吉川 陽・永瀬和宏・船戸 充・川上養一
    • Journal Title

      信学技報

      Volume: 120 Pages: 21-24

    • Related Report
      2020 Annual Research Report
  • [Journal Article] Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates2020

    • Author(s)
      R. Ishii, A. Yoshikawa, K. Nagase, M. Funato, and Y. Kawakami
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 12 Pages: 125014-125014

    • DOI

      10.1063/5.0024179

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology2020

    • Author(s)
      B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara
    • Journal Title

      Journal of Applied Physics

      Volume: 127 Issue: 1 Pages: 013102-013102

    • DOI

      10.1063/1.5134050

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Achromatic Deep Ultraviolet Lens Using Novel Optical Materials2020

    • Author(s)
      Y. Minami, M. Cadatal-Raduban, K. Kuroda, K. Shinohara, Y. Lai, K. Yamanoi, N. Sarukura, T. Shimizu, R. Ishii, Y. Kawakami, N. Kabasawa, T. Amano, K. Kiyohara, and M. Kiyohara
    • Journal Title

      physica status solidi (b)

      Volume: in press Issue: 8 Pages: 1900480-1900480

    • DOI

      10.1002/pssb.201900480

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Pushing the limits of deep-ultraviolet scanning near-field optical microscopy2019

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Journal Title

      APL Photonics

      Volume: 4 Issue: 7 Pages: 070801-070801

    • DOI

      10.1063/1.5097865

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Intrinsic exciton transitions of isotopically purified 13C studied by photoluminescence and transmission spectroscopy2019

    • Author(s)
      Ishii Ryota、Shikata Shinichi、Teraji Tokuyuki、Kanda Hisao、Watanabe Hideyuki、Funato Mitsuru、Kawakami Yoichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 1 Pages: 010903-010903

    • DOI

      10.7567/1347-4065/ab5b77

    • NAID

      210000157647

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Synthesis of nano-polycrystalline diamond from glassy carbon at pressures up to 25 GPa2019

    • Author(s)
      Irifune, T., Ueda, C., Ohshita, S., Ohfuji, H., Kunimoto, T. and Shinmei, T.
    • Journal Title

      High Pressure Research

      Volume: 40 Issue: 1 Pages: 96-106

    • DOI

      10.1080/08957959.2019.1702658

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells2019

    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake
    • Journal Title

      AIP Advances

      Volume: 9 Issue: 12 Pages: 125342-125342

    • DOI

      10.1063/1.5125799

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] Temperature-dependent electroluminescence spectroscopy on 265-nm AlGaN-based LEDs grown on AlN substrates2022

    • Author(s)
      Ryota Ishii, Akira Yoshikawa, Mitsuru Funato, and Yoichi Kawakami
    • Organizer
      IWSingularity 2022
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates2022

    • Author(s)
      Ryota Ishii, Mitsuru Funato, and Yoichi Kawakami
    • Organizer
      SPIE PHOTONICS WEST 2022
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Si添加ホモエピタキシャルAlN薄膜の極低温下フォトルミネッセンス測定2021

    • Author(s)
      石井良太,船戸充,川上養一,吉川陽,小林敬嗣
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Epitaxially laterally overgrown AlGaN quantum wells studied by selectively and non-selectively excited photoluminescence2021

    • Author(s)
      Shiki Tanaka, Ryota Ishii, Norman Susilo, Tim Wernicke, Michael Kneissl, Mitsuru Funato, and Yoichi Kawakami
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Recent progress in deep-ultraviolet scanning near-field optical microscope: a tool visualizing the luminescence properties of Al-rich AlGaN active layers2021

    • Author(s)
      Ryota Ishii, Mitsuru Funato, and Yoichi Kawakami
    • Organizer
      SPIE PHOTONICS WEST (Online, Mar. 6-11, 2021),
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Recombination Mechanism in III-Nitride Based Singularity Structures by Scanning Near-field Optical Microscopy2021

    • Author(s)
      Yoichi Kawakami, Ryota Ishii, and Mitsuru Funato
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] エレクトロルミネッセンス・フォトルミネッセンス法によるAlN基板上265 nm帯AlGaN LEDの評価2020

    • Author(s)
      石井良太・吉川 陽・永瀬和宏・船戸 充・川上養一
    • Organizer
      LQE CPM ED
    • Related Report
      2020 Annual Research Report
  • [Presentation] Exciton fine structure of aluminum nitride2020

    • Author(s)
      R. Ishii, M. Funato and Y. Kawakami
    • Organizer
      SPIE Photonics West, San Francisco, USA, 2020 (1-6 Feb., 2020) (invited)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Comparative study of AlGaN multiple quantum wells on annealed-sputtered-AlN and MOVPE-grown-AlN on sapphire substrates2019

    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami and H. Miyake
    • Organizer
      13th International Conference on Nitride Semiconductors, Washington, USA (July 7-12, 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Engineering of emission wavelength of InGaN quantum wells by fabrication of spatial off-cut variation2019

    • Author(s)
      A. Kafar, R. Ishii, S. Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors, Okinawa, Japan (Nov. 10-15, 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] High-temperature promoted nonradiative recombination at threading dislocations in blue-emitting InGaN quantum well2019

    • Author(s)
      R. Ishii, Y. Koyama, M. Funato, and Y. Kawakami
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors, Okinawa, Japan (Nov. 10-15, 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性2019

    • Author(s)
      正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養一, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会, 広島大学
    • Related Report
      2019 Annual Research Report
  • [Presentation] 青色・緑色発光InGaN量子井戸構造の高温環境下における顕微PLマッピング2019

    • Author(s)
      石井良太, 小山友二, 船戸充, 川上養一
    • Organizer
      第80回応用物理学会秋季学術講演会, 北海道大学
    • Related Report
      2019 Annual Research Report
  • [Presentation] Study of luminescence properties of InGaN layers with wide-range lateral indium content profiling2019

    • Author(s)
      A. Kafar, R. Ishii, S .Stanczyk, K. Gibasiewicz, S. Grzanka, T. Suski, P. Perlin, M. Funato and Y. Kawakami
    • Organizer
      第80回応用物理学会秋季学術講演会, 北海道大学
    • Related Report
      2019 Annual Research Report
  • [Remarks] 川上研究室

    • URL

      http://www.optomater.kuee.kyoto-u.ac.jp/

    • Related Report
      2021 Annual Research Report 2020 Annual Research Report 2019 Annual Research Report
  • [Patent(Industrial Property Rights)] 発振器、増幅器2022

    • Inventor(s)
      石井 良太, 外5名
    • Industrial Property Rights Holder
      国立大学法人京都大学、株式会社トクヤマ
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2022-065458
    • Filing Date
      2022
    • Related Report
      Products Report

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Published: 2019-04-18   Modified: 2024-03-28  

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