| Budget Amount *help |
¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2021: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2020: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2019: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Outline of Final Research Achievements |
Improvement of operation speed and functionality of large-scale integrated circuits has been achieved by scaling of silicon transistors. However, this approach of improvement of large-scale integrated circuit performance by scaling of silicon transistors is facing to the physical limit. For further improvement of large-scale integrated circuit performance, a new approach is required to obtain high-performance transistors. In the present study, techniques for growth of high-quality GeSn crystals on insulator and high-concentration doping have been developed to realize high-performance transistors having GeSn channel on insulator.
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