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Imaging of threading dislocations by hyper-Raman scattering

Research Project

Project/Area Number 19K22043
Research Category

Grant-in-Aid for Challenging Research (Exploratory)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 26:Materials engineering and related fields
Research InstitutionOsaka University

Principal Investigator

Tanikawa Tomoyuki  大阪大学, 工学研究科, 准教授 (90633537)

Project Period (FY) 2019-06-28 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2020: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2019: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Keywords窒化物半導体 / 多光子顕微鏡 / 転位 / ラマン散乱 / GaN / ハイパーラマン散乱 / 窒化ガリウム / シリコンカーバイド
Outline of Research at the Start

GaNの深部に伝搬する貫通転位を非破壊で解析するための手法としてハイパーラマン散乱測定を提案し、深部の歪場を検出することを目的とします。多光子励起フォトルミネッセンス測定により転位の三次元座標を特定し、転位近傍の歪場をハイパーラマン散乱測定により計測します。転位による歪場を計算により求め、マッピング測定結果と一致するような結果が得られれば、転位の種類を含めた三次元・非破壊分析が可能となります。

Outline of Final Research Achievements

Analysis of crystalline defects via nonlinear excitation process has been studied. First, identification of Burgers vector of threading dislocations in GaN using via multiphoton-excitation photoluminescence measurement was studied. Threading dislocations were observed as dark lines. They are classified by five according to their propagation habit and contrast. Next, edge component of threading dislocations were characterized using Raman spectroscopy. Peak wavenumber of E2-high mode was influenced by strain field by edge component of dislocations. Therefore threading edge and mixed dislocations were visualized by both multiphoton excitation photoluminescence and E2-high Raman mapping. Threading screw dislocations were only visualized by multiphoton excitation photoluminescence. Comparative study between multiphoton excitation photoluminescence and Raman spectroscopy could identify the type of dislocations.

Academic Significance and Societal Importance of the Research Achievements

結晶欠陥の非破壊評価手法は次世代半導体の高品質化の開発だけでなく、デバイスの信頼性評価においても重要な役割を持つ。多光子励起過程を用いた結晶評価技術は、試料を加工することなく内部の欠陥を評価できることから、評価後の試料をデバイスプロセス等に利用することができ、スループットの向上や解析に係る時間の短縮につながる技術である。本研究で得られた成果を基に非破壊で結晶欠陥の識別や分類ができることで、キラー欠陥の特定につながることを期待している。

Report

(3 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • Research Products

    (18 results)

All 2021 2020 2019 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Open Access: 1 results) Presentation (14 results) (of which Int'l Joint Research: 6 results,  Invited: 7 results) Remarks (1 results)

  • [Journal Article] Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping2021

    • Author(s)
      Tsukakoshi Mayuko、Tanikawa Tomoyuki、Yamada Takumi、Imanishi Masayuki、Mori Yusuke、Uemukai Masahiro、Katayama Ryuji
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 5 Pages: 055504-055504

    • DOI

      10.35848/1882-0786/abf31b

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Multiphoton Microscopy2020

    • Author(s)
      Tanikawa Tomoyuki
    • Journal Title

      Characterization of Defects and Deep Levels for GaN Power Devices

      Volume: - Pages: 1-22

    • DOI

      10.1063/9780735422698_007

    • ISBN
      9780735422704, 9780735422698, 9780735422728, 9780735422711
    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO2 patterns in HVPE growth2019

    • Author(s)
      Fujimoto Satoru、Itakura Hideyuki、Tanikawa Tomoyuki、Okada Narihito、Tadatomo Kazuyuki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SC1049-SC1049

    • DOI

      10.7567/1347-4065/ab1125

    • NAID

      210000156181

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Presentation] 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察2021

    • Author(s)
      谷川智之
    • Organizer
      2021年2月24日新学術領域研究 特異構造の結晶科学 オンライン成果報告・連絡会(Zoom)
    • Related Report
      2020 Annual Research Report
  • [Presentation] GaN結晶中の貫通転位の非破壊分類に向けた多光子励起PLマッピング像とラマンマッピング像の相関解析2021

    • Author(s)
      谷川智之、足立真理子、寺田陸斗、塚越真悠子、上向井正裕、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping2021

    • Author(s)
      T. Tanikawa, M. Tsukakoshi, M. Uemukai, R. Katayama
    • Organizer
      SPIE Photonics West: Conference 11686 -Gallium Nitride Materials and Devices XVI-
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Core structure of threading dislocations in GaN2021

    • Author(s)
      T. Kiguchi , Y. Kodama, Y. Hayasaka, T. Tanikawa, and T. J. Konno
    • Organizer
      "The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)"
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence2021

    • Author(s)
      M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
    • Organizer
      8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Comparative study of dislocation classification in HVPE-grown GaN by etch pit method and multiphoton-excitation photoluminescence imaging2020

    • Author(s)
      M. Tsukakoshi, T. Tanikawa, M. Uemukai, and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Related Report
      2020 Annual Research Report
  • [Presentation] 多光子励起PL三次元測定によるGaN基板中の転位の判別2020

    • Author(s)
      谷川智之、塚越真悠子、上向井正裕、片山竜二
    • Organizer
      ワイドギャップ半導体光・電子デバイス第162委員会 第118回研究会「最先端評価技術を用いたワイドギャップ半導体結晶中の転位評価」
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶中貫通転位の観察と分類2020

    • Author(s)
      塚越真悠子、谷川智之、上向井正裕、片山竜二
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Research-status Report
  • [Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶の貫通転位の観察と分類 (2)2020

    • Author(s)
      塚越真悠子、谷川智之、上向井正裕、片山竜二
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence2020

    • Author(s)
      M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
    • Organizer
      8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence2019

    • Author(s)
      谷川智之、大西一生、加納聖也、向井孝志、松岡隆志
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
    • Invited
  • [Presentation] 多光子顕微鏡によるGaN結晶中の転位伝搬評価2019

    • Author(s)
      谷川智之, 松岡隆志
    • Organizer
      第145委員会,第161委員会 合同研究会 「窒化物半導体における欠陥低減技術の進展と評価技術の最前線」
    • Related Report
      2019 Research-status Report
    • Invited
  • [Presentation] Nondestructive defect characterization of widegap semiconductors using multiphotonexcitation photoluminescence2019

    • Author(s)
      T. Tanikawa, M. Uemukai, R. Katayama
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Multiphoton-Excitation Photoluminescence: Novel Nondestructive Deffect Characterization Technology2019

    • Author(s)
      T. Tanikawa, T. Matsuoka
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research / Invited
  • [Remarks] 使える次世代半導体の実現。GaN 半導体の結晶欠陥を非破壊で識別する技術

    • URL

      https://www.eng.osaka-u.ac.jp/wp-content/uploads/2021/04/PR20210428.pdf

    • Related Report
      2020 Annual Research Report

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Published: 2019-07-04   Modified: 2022-01-27  

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