| Budget Amount *help |
¥19,630,000 (Direct Cost: ¥15,100,000、Indirect Cost: ¥4,530,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2009: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2008: ¥11,050,000 (Direct Cost: ¥8,500,000、Indirect Cost: ¥2,550,000)
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| Research Abstract |
Although optical properties of silicon-related semiconductor nanocrystals (NCs) is not as excellent as compound semiconductor materials such as cadmium selenide, these materials are highlighted as one of the promising frontiers in the future optoelectronic devices because of non-toxicity and abundance. We propose in-flight plasma synthesis of silicon carbide NCs with size tunable photoluminescence. As-produced NCs were dispersed into organic solvent, followed by spin coating to fabricate NC containing thin film. We successfully fabricated 3-12 nm NCs, and observed size-dependent photoluminescence between 650 nm and 900 nm. However electroluminescence was not possible due to significant oxidation of NCs. Compared with NCs synthesized using SiH_4, chlorine- terminated NCs are oxidized 1000-time faster than hydrogen-terminated NCs. Further development of given plasma technology for NCs containing lighting devices, ambient oxygen and moisture must be strictly eliminated.
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