Mesoplasma lateral epitaxy for next generation giant electronics
| Project/Area Number |
20686049
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KAMBARA Makoto The University of Tokyo, 大学院・工学系研究科, 准教授 (80359661)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥25,610,000 (Direct Cost: ¥19,700,000、Indirect Cost: ¥5,910,000)
Fiscal Year 2010: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2009: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2008: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
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| Keywords | 薄膜プロセス / エピタキシャル成長 / メゾプラズマ / 横方向成長 / キャビティリングダウン / エピタキシー / シリコン / 太陽電池 |
|---|
| Research Abstract |
Mesoplasma environment for high rate and low temperature epitaxy was revealed to possess low electron temperature and high ion density characteristics. Atomic hydrogen is also distributed at high concentration uniformly spatially. Nanoclusters, growth precursors for mesoplasma epitaxy, are not affected by a change in the hydrogen partial pressure. These enable us to deposit high quality epitaxial films with no special pre-treatment for substrate prior to deposition, suggesting its advantageous characteristics for large area epitaxial deposition.
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Report
(4 results)
Research Products
(37 results)
