Optical properties of rare-earth doped semiconducting silicides
| Project/Area Number |
20760199
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
TERAI Yoshikazu Osaka University, 工学研究科, 講師 (90360049)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | シリサイド半導体 / 希土類添加半導体 / 半導体光物性 / 鉄シリサイド / シリコンオプトエレクトロニクス / 変調分光法 / フォトリフレクタンス / エピタキシャル成長 / 分子線エピタキシー法 |
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| Research Abstract |
We have investigated optical properties of rare-earth doped semiconducting silicides grown by ion implantation to develop silicon-based optoelectronics devices. Rare-earth ion of Er^<3+> was doped into β-FeSi_2 epitaxial films on Si substrate. The Er-doped β-FeSi_2 showed 1.5μm emission which is a wavelength for fiber optics communications.
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Report
(3 results)
Research Products
(39 results)
