Spin injection into Si using Co-based Heusler alloys
| Project/Area Number |
20760478
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SUKEGAWA Hiroaki National Institute for Materials Science, 磁性材料センター, 研究員 (30462518)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | スピンエレクトロニクス / 超薄膜 / 磁性 |
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| Research Abstract |
Highly spin-polarized ferromagnetic materials are suitable for a spin source to realize an efficient spin-injection into semiconductor Si. In this study I focused on a Co_2FeAl_<0.5>Si_<0.5> (CFAS) Heusler alloy and established fabrication techniques of high-quality CFAS thin films. As a result, very high spin-polarization of the CFAS films was confirmed through analyses of transport properties of multilayers with the CFAS. In addition, formation of MgAl_2O_4 epitaxial thin films on the CFAS was achieved. The MgAl_2O_4 can be used as a tunnel barrier for future spin-injection devices since almost perfect lattice matching between MgAl_2O_4 and CFAS is achieved.
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Report
(3 results)
Research Products
(36 results)
