| Project/Area Number |
20860090
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
HAYAKAWA Ryoma National Institute for Materials Science, 半導体材料センター, NIMSポスドク研究員 (90469768)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,211,000 (Direct Cost: ¥2,470,000、Indirect Cost: ¥741,000)
Fiscal Year 2009: ¥1,495,000 (Direct Cost: ¥1,150,000、Indirect Cost: ¥345,000)
Fiscal Year 2008: ¥1,716,000 (Direct Cost: ¥1,320,000、Indirect Cost: ¥396,000)
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| Keywords | 有機トランジスタ / 有機ヘテロ界面 / 光 / ヘテロ構造 / 光スイッチング |
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| Research Abstract |
The objective of our study is to control the charge-transfer at organic hetero-interface by photo-irradiation, leading to development of photo-switching organic transistor. Firstly, we successfully improved electrical properties of quaterrylene (QT) thin film transistors by interface-engineering. As a result, even 2ML-thick QT thin films worked as p-typed transistors. Then, we formed organic hetero-layer transistors, where charge-transfer complex molecules with high electron acceptability were deposited on the top of QT transistors. Threshold voltage in the hetero-layer transistors was drastically changed by charge-transfer complex molecules, demonstrating that transistor properties can be controlled through organic hetero-interface.
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