| Budget Amount *help |
¥161,200,000 (Direct Cost: ¥124,000,000、Indirect Cost: ¥37,200,000)
Fiscal Year 2012: ¥23,920,000 (Direct Cost: ¥18,400,000、Indirect Cost: ¥5,520,000)
Fiscal Year 2011: ¥43,680,000 (Direct Cost: ¥33,600,000、Indirect Cost: ¥10,080,000)
Fiscal Year 2010: ¥61,360,000 (Direct Cost: ¥47,200,000、Indirect Cost: ¥14,160,000)
Fiscal Year 2009: ¥32,240,000 (Direct Cost: ¥24,800,000、Indirect Cost: ¥7,440,000)
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| Research Abstract |
This project aims at the development of next generation mesoplasma SIEMENS technology for direct production of wafer-equivalent thin film solar cells. Special attentions were paid to understanding the mechanisms of the nano-cluster assisted fast rate epitaxy and also to an in-situ measurement of the absolute density of the excited atomic hydrogen, both of which are the core of the mesoplasma, together with the technological development of the cost effective production system. Based on these knowledge and understandings, we have proved the unique characteristics of mesoplasma CVD by demonstrating the ultrafast epitaxial deposition with high material yields that exceeds beyond the kinetics limit of the SIEMENS technology.
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