| Budget Amount *help |
¥43,290,000 (Direct Cost: ¥33,300,000、Indirect Cost: ¥9,990,000)
Fiscal Year 2012: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2011: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2010: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2009: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
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| Research Abstract |
Silicon carbide (SiC) is a promising semiconductor material for energy-saving power devices. However, because of its high hardness and brittleness, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique, which is plasma etching using atmospheric-pressure plasma, has been considered for thinning and dicing process of SiC substrates by using the newly-developed PCVM apparatus. As a result of thinning experiments, a maximum removal rate of 500 nm/min was obtained over the entire 2-inch 4H-SiC (0001) wafer. And as a result of basic cutting experiments, a maximum removal rate of more than 0.01 mm/min with a groove width of less than 0.2 mm was successfully achieved.
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