Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope
| Project/Area Number |
21360003
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|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saitama University |
|---|
Principal Investigator |
KAMATA Norihiko 埼玉大学, 大学院・理工学研究科, 教授 (50211173)
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|---|
| Co-Investigator(Kenkyū-buntansha) |
FUKUDA Takeshi 埼玉大学, 大学院・理工学研究科, 助教 (40509121)
HIRAYAMA Hideki 理化学研究所 (70270593)
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|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2011: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2010: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
|
|---|
| Keywords | 欠陥準位 / フォトルミネッセンス / 2波長励起 / 非接触測定 |
|---|
| Research Abstract |
By utilizing both above-gap and below-gap excitation sources with a gated CCD camera, the scheme of two-wavelength excited photoluminescence has been improved to detect nonradiative recombination (NRR) centers in various materials. An energy distribution of NRR centers at around 1.55eV was obtained in an InGaN quantum well. Detection of NRR centers in InGaAs quantum wells and Ba_3Si_6O_<12>N_2:Eu^<2+> phosphors became possible for the first time.
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Report
(4 results)
Research Products
(66 results)
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[Book] 電子材料2011
Author(s)
電気学会編集委員会
Total Pages
505
Publisher
朝倉書店
Related Report
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[Book] 電気データブック2011
Author(s)
電気学会編集委員会編
Total Pages
505
Publisher
朝倉書店(「電子材料」担当:神谷武志、鎌田憲彦)
Related Report
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