Investigation on Evanescent-to-Propagating Light Transformation Technique in a Patterned Substrate

• Project/Area Number: 21360016
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: WANG Xuelun 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (80356609)
• Co-Investigator(Kenkyū-buntansha): SHIMIZU Mitsuaki 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究チーム長 (10357212) ; OGURA Mutsuo 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (90356717)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000); Fiscal Year 2011: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2010: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2009: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
• Keywords: 光物性 / エバネッセント光 / リッジ構造 / 指向性 / 空気伝播光 / 結合 / GaAs / GaN / FDTD / 光取り出し効率 / AlGaAs / 放射パターン / MOCVD / 光取出し効率 / SiO_2 / 屈折率

Research Abstract

The evanescent-to-propagating light transformation phenomenon in a fine ridge structure was investigated by optical techniques. It is found that light-extraction efficiency can be further enhanced by about 1.5 times by depositing a thin SiO_2 film on the ridge surface, due to occurrence of the evanescent wave coupling effect at both the semiconductor-SiO_2 and SiO_2-air interfaces. It is also shown that high spatial directionality could be achieved by localizing the light-emitting area around the ridge center.

Research Products

• [Journal Article] Light Source Position Dependence of Evanescent Wave Coupling Effect in Narrow GaAs/AlGaAs Ridge Structure (2012)
  • Author(s): Xue-Lun Wang, Tokio Takahashi
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.51 Issue: 4R Pages: 040205-040205
  • DOI: 10.1143/jjap.51.040205
  • NAID: 40019230895
  • Peer Reviewed
• [Journal Article] 革新的なLED光取出し高効率化技術 (2011)
  • Author(s): 王学論
  • Journal Title: OplusE Volume: 33巻 Pages: 170-172
• [Journal Article] 革:新的なLED光取り出し高効率化技術 (2011)
  • Author(s): 王学論
  • Journal Title: OplusE Volume: 33 Pages: 170-172
• [Journal Article] 半導体発光ダイオードの光取出し効率20倍 (2009)
  • Author(s): 王学論
  • Journal Title: Ceramics Japan Volume: 44巻 Pages: 487-487
• [Journal Article] 半導体発光ダイオードの光取出し効率20倍 (2009)
  • Author(s): 王学論
  • Journal Title: Ceramics Japan 44 Pages: 487-487
• [Presentation] リッジ構造におけるエバネッセント光の結合効果の光源位置依存性 (2012)
  • Author(s): 王学論、高橋言緒
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] リッジ構造におけるエバネッセント光の結合効果の光源位置依存性 (2012)
  • Author(s): 王学論、高橋言緒
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京)
  • Year and Date: 2012-03-17
• [Presentation] 微小表面リッジ構造によるLEDの光取出し技術(招待講演) (2012)
  • Author(s): 王学論
  • Organizer: 第7回表面技術会議
  • Place of Presentation: 東京ビッグサイト
  • Year and Date: 2012-02-15
• [Presentation] 微小表面リッジ構造によるLEDの光取出し技術 (2012)
  • Author(s): 王学論
  • Organizer: 第7回表面技術会議
  • Place of Presentation: 東京ビッグサイト(東京)(招待講演)
  • Year and Date: 2012-02-15
• [Presentation] A Novel Light Extraction Technique Based on Coupling of Evanescent Waves in a Fine Ridge Structure (2011)
  • Author(s): Xue-Lun Wang
  • Organizer: International Conference on Nanoscience & Technology, ChinaNANO2011
  • Place of Presentation: Beijing China
  • Year and Date: 2011-09-09
• [Presentation] A Novel Light Extraction Technique Based on Coupling of Evanescent Waves in a Fine Ridge Structure (2011)
  • Author(s): Xue-Lun Wang
  • Organizer: International Conference on Nanoscience & Technology, China NANO2011
  • Place of Presentation: Beijing, China(招待講演)
  • Year and Date: 2011-09-09
• [Presentation] リッジ構造におけるエバネッセント光の結合現象-3次元放射パターン測定- (2011)
  • Author(s): 王学論、?国棟
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-24
• [Presentation] Radiatively limited dephasing in a single quantum dot strongly coupled to a one-dimensional waveguide (2010)
  • Author(s): A.Enderlin, M.Ravaro, C.Tonin, V.Voliotis, R.Grousson, A.Lemaitre, A.Martinez, X.-L.Wang
  • Organizer: The 30th International Conference on the Physics of Semiconductors
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2010-07-27
• [Presentation] Near-80% Light-Extraction Efficiency Realized in a GaAs/AlGaAs Ridge Structure by Evanescent Wave Coupling (2010)
  • Author(s): X.-L. Wang, A. Enderlin, M. Ravaro
  • Organizer: The 37th International Symposium on Compound Semiconductors
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Near-80% Light-Extraction Efficiency Rcalized in a GaAs/AlGaAs Ridge Structure by Evanescent Wave Coupling (2010)
  • Author(s): X.-L.Wang, A.Enderlin, M.Ravaro
  • Organizer: The 37th International Symposium on Compound Semiconductors
  • Place of Presentation: 高松シンボルタワー、香川
  • Year and Date: 2010-06-04
• [Presentation] 凹凸基板におけるエバネッセント光の結合による半導体発光の超高効率取り出し (2010)
  • Author(s): 王学論、A. Enderlin, M. Ravaro
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-20
• [Presentation] 凹凸基板におけるエバネッセント光の結合による半導体発光の超高効率取り出し (2010)
  • Author(s): 王学論、A.Enderlin, M.Ravaro
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2010-03-20
• [Presentation] A Novel Light-Extraction Technique for Light-Emitting Diodes Based on Coupling of Evanescent Waves (2009)
  • Author(s): X.-L. Wang, S. Furue, M. Ogura, V. Voliotis, M. Ravaro, A. Enderlin, R. Grousson
  • Organizer: The 2nd International Conference on White LEDs and Solid State Lighting
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2009-12-16
• [Presentation] A Novel Light-Extraction Technique for Light-Emitting Diodes Based on Coupling of Evanescent Waves (2009)
  • Author(s): X.-L.Wang, S.Furue, M.Ogura, V.Voliotis, M.Ravaro, A.Enderlin, R.Grousson
  • Organizer: The Second International Conference on White LEDs and Solid State Lighting
  • Place of Presentation: Taipei International Convention Center, Taiwan
  • Year and Date: 2009-12-16
• [Presentation] エバネッセント光の制御によるLED光取出し高効率化技術 (2009)
  • Author(s): 王学論
  • Organizer: 技術セミナー「LEDの高輝度・高効率化と蛍光体・封止材料技術」(サイエンス&テクノロジー株式会社主催)
  • Place of Presentation: 東京都大田区産業プラザ
  • Year and Date: 2009-11-25
• [Presentation] Highly Efficient Extraction of Spontaneous Emission through Coupling of Evanescent Waves (2009)
  • Author(s): X.-L.Wang, S.Furue, M.Ogura, V.Voliotis, M.Ravaro, A.Enderlin, R.Grousson
  • Organizer: The 14th International Conference on Modulated Semiconductor Structures
  • Place of Presentation: 神戸国際会議場
  • Year and Date: 2009-07-24
• [Book] LED照明の高効率化プロセス・材料技術と応用展開、第2章、第1節 (2010)
  • Author(s): 王学論
  • Publisher: サイエンス & テクノロジー株式会社
• [Book] LED照明の高効率化プロセス・材料技術と応用展開(第2章、第1節) (2010)
  • Author(s): 王学論
  • Total Pages: 478
  • Publisher: サイエンス&テクノロジー株式会社
• [Remarks]
  • URL: http://www.aist.go.jp/aist_j/press_release/pr2010/pr20100318/pr20100318.html
• [Remarks]
  • URL: http://www.aist.go.jp/aist_j/press_release/pr2010/pr20100318/pr20100318.html
• [Patent(Industrial Property Rights)] 発光ダイオード (2013)
  • Inventor(s): 王 学論
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-049079
  • Filing Date: 2013-03-12
  • Acquisition Date: 2016-11-18
• [Patent(Industrial Property Rights)] 発光ダイオード (2012)
  • Inventor(s): 王学論
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Industrial Property Number: 2012-056750
  • Filing Date: 2012-03-14
• [Patent(Industrial Property Rights)] Semiconductor Light Emitting Diode (2011)
  • Inventor(s): 王学論
  • Industrial Property Rights Holder: 産業技術総合研究所
  • Filing Date: 2011-07-25
  • Overseas
• [Patent(Industrial Property Rights)] Semiconductor Light Emitting Diode (2011)
  • Inventor(s): 王学論
  • Industrial Property Rights Holder: 産総研
  • Filing Date: 2011-07-25
  • Overseas
• [Patent(Industrial Property Rights)] 半導体発光ダイオード (2010)
  • Inventor(s): 王学論、小倉睦郎
  • Industrial Property Rights Holder: 産総研
  • Filing Date: 2010-02-08
  • Overseas