STUDIES ON STEP BEHAVIOR ON Si(110)SURFACE AND ITS APPLICATION TO SELF-ORGANIZED FORMATION OF GRAPHENE NANO-RIBBON

• Project/Area Number: 21360017
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: SUEMITSU Maki 東北大学, 電気通信研究所, 教授 (00134057)
• Co-Investigator(Kenkyū-buntansha): FUKIDOME Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841) ; ENTA Yoshiharu 弘前大学, 理工学部, 准教授 (20232986)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥19,630,000 (Direct Cost: ¥15,100,000、Indirect Cost: ¥4,530,000); Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2009: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
• Keywords: グラフェン / エピタキシャルグラフェン / ステップ / 表面微細加工 / 表面終端 / 電子物性 / 半導体 / 金属 / ナノリボン

Research Abstract

We have studied in detail the impacts of surface microstructures of substrates on the quality and the electronic structure of the epitaxial graphene (EG)formed on them. As a result, we established a method to control the surface steps on Si and SiC substrates, and succeeded in the betterment of EG quality and in controlling the Si-and C-termination of 3C-SiC(111)surfaces. Moreover, it was found that EGs on Si-terminated and C-terminated SiC(111)surfaces show semiconducting and metallic properties, respectively. This finding surely provides a novel method to control the graphene electronic properties, which can be applied to fabrication of graphene devices.

Research Products

• [Journal Article] Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations (2011)
  • Author(s): H. Handa, R. Takahashi, S. Abe, K. Imaizumi, E. Saito, M. H. Jung, S. Ito, H. Fukidome and M. Suemitsu
  • Journal Title: JJAP Volume: 50巻
  • NAID: 210000070339
  • Peer Reviewed
• [Journal Article] Temperature-Programmed Desorption Observation of Graphene-on-silicon Process (2011)
  • Author(s): Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu
  • Journal Title: JJAP Volume: 50巻
  • NAID: 210000139163
  • Peer Reviewed
• [Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon using Surface Termination of 3C-SiC(111)/Si (2011)
  • Author(s): Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, and Maki Suemitsu
  • Journal Title: Appled Phsics Express Volume: 4巻
  • NAID: 10030153776
  • Peer Reviewed
• [Journal Article] Transmission-electron-microscopy observations on the growth of epitaxial graphene on 3C-SiC(110)and 3C-SiC(100)virtual substrates (2011)
  • Author(s): Hiroyuki Handa, Shun Ito, Hirokazu Fukidome and Maki Suemitsu
  • Journal Title: Materials Science Forum Volume: 711巻 Pages: 242-245
  • Peer Reviewed
• [Journal Article] Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001)Using Monomethylsilane (2011)
  • Author(s): Eiji Saito, Sergey N. Filimonov, and Maki Suemitsu
  • Journal Title: JJAP Volume: 50巻
  • NAID: 40017446817
  • Peer Reviewed
• [Journal Article] Step bunching and step"rotation" in homoepitaxial growth of Si on Si(110)-16×2 (2011)
  • Author(s): Arnold Alguno, Sergey N. Filimonov, Maki Suemitsu
  • Journal Title: Surface Science Volume: 605巻 Pages: 838-843
  • Peer Reviewed
• [Journal Article] Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations (2011)
  • Author(s): H.Handa, R.Takahashi, S.Abe, K.Imaizumi, E.Saito, M.H.Jung, S.Ito, H.Fukidome, M.Suemitsu
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 210000070339
  • Peer Reviewed
• [Journal Article] Temperature-Programmed Desorption Observation of Graphene-on-ilicon Process (2011)
  • Author(s): Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu
  • Journal Title: Japanese Journal of Applied Physics Volume: 50 Issue: 7R Pages: 070102-070102
  • DOI: 10.1143/jjap.50.070102
  • Peer Reviewed
• [Journal Article] Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon using Surface Termination of 3C-SiC(111)/Si (2011)
  • Author(s): Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito, Maki Suemitsu
  • Journal Title: Appled Phsics Express Volume: 4
  • NAID: 10030153776
  • Peer Reviewed
• [Journal Article] Transmission-electron-microscopy observations on the growth of epitaxial graphene on 3C-SiC(110) and 3C-SiC(110) virtual substrates (2011)
  • Author(s): Hiroyuki Handa, Shun Ito, Hirokazu Fukidome, Maki Suemitsu
  • Journal Title: Materials Science Forum Volume: 711 Pages: 242-245
  • Peer Reviewed
• [Journal Article] Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane (2011)
  • Author(s): Eiji Saito, Sergey N.Filimonov, Maki Suemitsu
  • Journal Title: Japanese Journal of Applied Physics Volume: 50
  • NAID: 40017446817
  • Peer Reviewed
• [Journal Article] Step bunching and step "rotation" in homoepitaxial growth of Si on Si(110)-16×2 (2011)
  • Author(s): Arnold Alguno, Sergey N.Filimonov, Maki Suemitsu
  • Journal Title: Surface Science Volume: 605 Pages: 838-843
  • Peer Reviewed
• [Journal Article] Epitaxial growth processes of graphene on silicon substrates (2010)
  • Author(s): Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, and Maki Suemitsu
  • Journal Title: JJAP Volume: 49巻
  • NAID: 210000067872
  • Peer Reviewed
• [Journal Article] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission (2010)
  • Author(s): Y. Enta, H. Nakazawa, S. Sato, H. Kato, and Y. Sakisaka
  • Journal Title: Journal of Physics : Conference Series Volume: 235巻 Pages: 12008-12013
  • Peer Reviewed
• [Journal Article] Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission (2010)
  • Author(s): Y.Enta, H.Nakazawa, S.Sato, H.Kato, Y.Sakisaka
  • Journal Title: Journal of Physics : Conference Series Volume: 235 Pages: 12008-12013
  • Peer Reviewed
• [Journal Article] Epitaxial Growth Processes of Graphene on Silicon Substrates (2010)
  • Author(s): Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Maki Suemitsu
  • Journal Title: Japanese Journal of Applied Physics 49
  • NAID: 210000067872
  • Peer Reviewed
• [Presentation] Epitaxial growth of graphene on 3C-SiC thin film formed on Si substrates (2012)
  • Author(s): Maki Suemitsu
  • Organizer: International Symposium on Surface Science (ISSS-6)
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2012-12-15
• [Presentation] Epitaxial growth of graphene on 3C-SiC thin film formed on Si substrates (2011)
  • Author(s): Maki Suemitsu
  • Organizer: International Symposium on Surface Science(ISSS-6)
  • Place of Presentation: 東京
  • Year and Date: 2011-12-15
• [Presentation] Tunable electronic structure of epitaxial graphene formed on silicon substrates (2011)
  • Author(s): Maki Suemitsu, and Hirokazu Fukidome
  • Organizer: 3rd Symposium on the Science and Technology of Epitaxial Graphene (STEG3)
  • Place of Presentation: Florida
  • Year and Date: 2011-10-25
• [Presentation] Tunable electronic structure of epitaxial graphene formed on silicon substrates (2011)
  • Author(s): Maki Suemitsu, Hirokazu Fukidome
  • Organizer: 3rd Symposium on the Science and Technology of Epitaxial Graphene (STEG3)
  • Place of Presentation: Florida (USA)(招待講演)
  • Year and Date: 2011-10-25
• [Presentation] Growth of epitaxial graphene on 3C-SiC/Si heterostructure (2011)
  • Author(s): Maki Suemitsu, Hiroyuki Handa, Shun Ito, and Hirokazu Fukidome
  • Organizer: HeteroSiC-WASMPE2011
  • Place of Presentation: Tours
  • Year and Date: 2011-06-30
• [Presentation] Growth of epitaxial graphene on 3C-SiC/Si heterostructure (2011)
  • Author(s): Maki Sue, Hirokazu Fukidome
  • Organizer: HeteroSiC-WASMPE2011
  • Place of Presentation: Tours (France)(招待講演)
  • Year and Date: 2011-06-30
• [Presentation] Novel epitaxy of graphene using substrate microfabrication (2011)
  • Author(s): H.Fukidome, M.Kotsugi, T.Ohokuchi, T.Kinoshita, Th.Seyller, K.Horn, Y.Kawai, M.Suemitsu, Y.Watanabe
  • Organizer: APS March Meeting 2011
  • Place of Presentation: Dallas, USA
• [Presentation] Formation of Epitaxial Graphene on Mesa-patterned SiC Substrate (2010)
  • Author(s): H. Handa, R. Takahashi, K. Imaizumi, Y. Kawai, H. Fukidome, Y. Enta, M. Suemitsu, M. Kotsugi, T. Ohkochi, Y. Watanabe, T. Kinoshita
  • Organizer: 23rd International Microprocesses and Nanotechnology Conference
  • Place of Presentation: 福岡
  • Year and Date: 2010-11-09
• [Presentation] CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE (2010)
  • Author(s): Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
  • Organizer: 2nd International Symposium on Graphene Devices
  • Place of Presentation: 仙台
  • Year and Date: 2010-10-27
• [Presentation] Nanoscale Control of Structure of Epitaxial Graphene by Using Substrate Microfabrication (2010)
  • Author(s): Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe
  • Organizer: 2nd International Symposium on Graphene Devices
  • Place of Presentation: 仙台
• [Presentation] Formation of Epitaxial Graphene on Silicon Substrates via a SiC Ultrathin Film (2009)
  • Author(s): Maki Suemitsu
  • Place of Presentation: シンガポール
  • Year and Date: 2009-12-15
• [Presentation] Formation of Epitaxial Graphene on Silicon Substrates via a SiC Ultrathin Film (2009)
  • Author(s): 末光眞希
  • Organizer: SICC-6
  • Place of Presentation: Singapore、Singapore
  • Year and Date: 2009-12-15
• [Presentation] Si系薄膜の成膜機構の原子・分子レベルでの解明と低温・高品質形成を実現する新たな成膜技術の創生 (2009)
  • Author(s): 末光眞希
  • Organizer: 第50回真空に関する連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2009-11-04
• [Book] Silicon-germanium(SiGe)nanostructures : Production, properties and applications in electronics, Chapter (2011)
  • Author(s): M. Suemitsu and S. Filimonov
  • Total Pages: 3
  • Publisher: Woodhead Publishing
• [Book] Silicon-germanium(SiGe) nanostructures : Production, properties and applications in electronics, Chapter 3 (2011)
  • Author(s): M.Suemitsu, S.Filimonov
  • Publisher: Woodhead Publishing