Optical phase conjugation based on a ferroelectric semiconductor
| Project/Area Number |
21360026
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied optics/Quantum optical engineering
|
|---|
| Research Institution | Chiba University |
|---|
Principal Investigator |
OMATSU Takashige 千葉大学, 大学院・融合科学研究科, 教授 (30241938)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2011: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2010: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2009: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
|
|---|
| Keywords | 非線形光学 / フォトリフラクティブ効果 / フェロエレクトリック半導体 / レーザー / 超短パルスレーザー / 位相共役光学 |
|---|
| Research Abstract |
Photorefractive nonlinear wave mixing at the telecommunication wavelength 1.55 μm has been intensely investigated, because it enables us potentially to demonstrate beam combination, beam cleanup, and optical phase conjugation in combination with fiber optics. Photorefraction at this wavelength regime has been investigated mostly in semiconductors such as CdTe : V, since conventional ferroelectric materials, i.e., Rh doped BaTiO_3 has property of very poor photorefractive sensitivity at this wavelength. However, the CdTe : V requires an additional large alternating current (AC) electric field (.4 kV/cm) and 1.3 μm stimulating illumination to achieve an efficient photorefractive two wave mixing gain.
In this work, we investigate 1.55 μm photorefractive phase conjugation in a ferroelectric semiconductor material, tin thiohypodiphosphate (Sn_2P_2S_6, SPS), showing a relatively narrow band gap (～2.3 eV), a high charge mobility, as well as a large dielectric constant.
|
Report
(4 results)
Research Products
(39 results)
