Development of dynamically polarization-controlled optical amplifier using stacked quantum dots
| Project/Area Number |
21360151
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Kobe University |
|---|
Principal Investigator |
KITA Takashi 神戸大学, 大学院・工学研究科, 教授 (10221186)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KOJIMA Osamu 神戸大学, 大学院・工学研究科, 准教授 (00415845)
|
|---|
| Project Period (FY) |
2009 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2010: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2009: ¥10,270,000 (Direct Cost: ¥7,900,000、Indirect Cost: ¥2,370,000)
|
|---|
| Keywords | 量子ドット / 光アンプ / 偏波無依存 / 広帯域 / 光通信 |
|---|
| Research Abstract |
Three-dimensionally controlled quantum dot(QD) has aδ-function type density of states, which realizes high-performance devices. In particular, self-assembled InAs/GaAs QDs grown by utilizing the Stranski-Ktrastanov mode are suitable for laser and optical relay devices and are expected to realize polarization-insensitive operation, broad-band operation, and ultrafast response simultaneously. We developed a precisely controlled stacking technique of InAs/GaAs QDs exhibiting the one-dimensional properties. In particular, we fabricated semiconductor amplifiers including the stacked InAs/GaAs QDs and demonstrated the control of the polarization insensitivity.
|
Report
(4 results)
Research Products
(107 results)
