Studies on nature of defect centers and charge trapping characteristics of silicon nitride films and low dielectric constant dielectric films for the nonvolatile memory applications

• Project/Area Number: 21560336
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokai University
• Principal Investigator: KOBAYASHI Kiyoteru 東海大学, 工学部, 教授 (90408005)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2011: ¥130,000 (Direct Cost: ¥100,000、Indirect Cost: ¥30,000); Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 半導体メモリ / 電子・電気材料 / 不揮発性メモリ / LSI / シリコン窒化膜 / 常磁性欠陥 / CVD / Cat-CVD / Si_3N_4 / SiCN

Research Abstract

The nature of the K centers in silicon nitride films was investigated. We revealed that the paramagnetic K^0 centers acted as generation centers of electron-hole pairs in the nitride films. It was also shown that hole trap sites in the silicon nitride films in memory devices fabricated in the present study were not K centers. In addition, silicon nitride films with a high density of hole traps were formed using low-temperature catalytic chemical vapor deposition(Cat-CVD). The Cat-CVD nitride films provided the superior retention characteristics in the erase condition of memory elements. We also showed that low-dielectric constant SiCN films yielded sufficient retention characteristics for the charge trapping dielectric layer of nonvolatile memory devises.

Research Products

• [Journal Article] Conduction Currents and Paramagnetic Defect Centers in UV-Illuminated Silicon Nitride Films (2011)
  • Author(s): K. Kobayashi and K. Ishikawa
  • Journal Title: ECS Transactions Volume: Vol.41, No.3 Pages: 401-414
  • Peer Reviewed
• [Journal Article] Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-k Films (2011)
  • Author(s): S. Nagano, K. Sakoda, S. Hasaka, and K. Kobayashi
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.50
  • NAID: 210000138869
  • Peer Reviewed
• [Journal Article] Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films (2011)
  • Author(s): K. Kobayashi and K. Ishikawa
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.50
  • NAID: 40018777873
  • Peer Reviewed
• [Journal Article] Conduction Currents and Paramagnetic Defect Centers in UV-Illuminated Silicon Nitride Films (2011)
  • Author(s): K.Kobayashi, K.Ishikawa
  • Journal Title: ECS Transactions Volume: 41(3) Issue: 3 Pages: 401-414
  • DOI: 10.1149/1.3633055
  • Peer Reviewed
• [Journal Article] Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-k Flims (2011)
  • Author(s): S.Nagano, K.Sakoda, S.Hasaka, K.Kobayashi
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Issue: 5S1 Pages: 05EB08-05EB08
  • DOI: 10.1143/jjap.50.05eb08
  • Peer Reviewed
• [Journal Article] Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films (2011)
  • Author(s): K.Kobayashi and K.Ishikawa
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50
  • NAID: 40018777873
• [Presentation] Conduction currents and paramagnetic defect centers in UV-illuminated silicon nitride films (2011)
  • Author(s): K.Ishikawa, K.Kobayashi
  • Organizer: 220th ECS Meeting
  • Place of Presentation: Boston
  • Year and Date: 2011-10-11
• [Presentation] Cat-CVD法によるシリコン窒化膜の不揮発性メモリデバイスへの応用 (2011)
  • Author(s): 高原優, 高木牧子, 山本裕子, 座間秀昭, 小林清輝
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-31
• [Presentation] Effects of thermal annealing on current component and paramagnetic defects induced by UV exposure of silicon nitride films (2011)
  • Author(s): K.Ishikawa, K.Kobayashi
  • Organizer: 30th Electronic Materials Symposium (EMS-30)
  • Place of Presentation: ラフォーレ琵琶湖(滋賀県)
  • Year and Date: 2011-06-30
• [Presentation] Carrier Transport in UV-illuminated Silicon Nitride Films (2011)
  • Author(s): K.Ishikawa and K.Kobayashi
  • Organizer: 2011 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES : SCIENCE AND TECHNOLOGY
  • Place of Presentation: 東京工業大学(東京都)
  • Year and Date: 2011-01-20
• [Presentation] Effects of thermal annealing on current component and paramagnetic defects induced by UV exposure of silicon nitride films (2011)
  • Author(s): K. Ishikawa and K. Kobayashi
  • Organizer: Extended Abstracts of 30th Electronic Materials Symposium(EMS-30)
  • Place of Presentation: Moriyama
• [Presentation] Cat-CVD法によるシリコン窒化膜の不揮発性メモリデバイスへの応用 (2011)
  • Author(s): 高原優, 高木牧子, 山本裕子, 座間秀昭, 小林清輝
  • Organizer: 2011年秋季第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学
• [Presentation] Conduction Currents and Paramagnetic Defect Centers in UV-Illuminated Silicon Nitride Films (2011)
  • Author(s): K. Ishikawa and K. Kobayashi
  • Organizer: 220th ECS Meeting
  • Place of Presentation: Boston, Abstract
• [Presentation] Carrier Transport in UV-illuminated Silicon Nitride Films (2011)
  • Author(s): K. Ishikawa and K. Kobayashi
  • Organizer: Extended Abstracts of 2011 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES : SCIENCE AND TECHNOLOGY(IWDTF-11)
• [Presentation] Charge Trapping Characteristics in Silicon Nitrides Deposited Using Catalytic Chemical Vapor Deposition (2010)
  • Author(s): Y.Takahara, H.Watanabe, M.Takagi, H.Zama, and K.Kobayashi
  • Organizer: 薄膜材料デバイス研究会第7回研究集会
  • Place of Presentation: なら100年会館(奈良県)
  • Year and Date: 2010-11-05
• [Presentation] Internal Repair for Plasma Damaged Low-k Films by Methylating Chemical Vapor (2010)
  • Author(s): S.Nagano, K.Sakoda, S.Hasaka, and K.Kobayashi
  • Organizer: Advanced Metallization Conference 2010 : 20th Asian Session
  • Place of Presentation: 東京大学(東京都)
  • Year and Date: 2010-10-20
• [Presentation] Photoinduced leakage currents and paramagnetic defects in amorphous SiCN and Si_3N_4 dielectrics for ULSI applications (2010)
  • Author(s): K.Kobayashi
  • Organizer: Asia Pacific Interfinish 2010
  • Place of Presentation: The BIOPOLIS (Singapore)
  • Year and Date: 2010-10-20
• [Presentation] 低誘電率SiCN膜の不揮発性メモリデバイスへの応用 (2010)
  • Author(s): 立崎悟史, 渡辺紘章, 五反田慎, 小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-20
• [Presentation] 紫外線照射を行ったSi_3N_4膜における電気伝導機構の検討(I) (2010)
  • Author(s): 石川貢吉, 浅妻裕文, 渡辺紘章, 村田龍紀, 浅井孝祐, 土本淳一, 小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-19
• [Presentation] 紫外線照射を行ったSi_3N_4膜における電気伝導機構の検討(II) (2010)
  • Author(s): 石川貢吉, 浅妻裕文, 渡辺紘章, 村田龍紀, 浅井孝祐, 土本淳一, 小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-19
• [Presentation] 紫外線照射を行ったSi_3N_4膜における電気伝導機構の検討(III) (2010)
  • Author(s): 渡辺紘章, 浅妻裕文, 石川貢吉, 小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県)
  • Year and Date: 2010-03-19
• [Presentation] Charge Trapping Characteristics in Silicon Nitrides Deposited Using Catalytic Chemical Vapor Deposition (2010)
  • Author(s): Y. Takahara, H. Watanabe, M. Takagi, H. Zama, and K. Kobayashi
  • Organizer: 薄膜材料デバイス研究会第7回研究集会「薄膜デバイスの理解と解析」アブストラクト
  • Place of Presentation: なら100年会館
• [Presentation] Photoinduced leakage currents and paramagnetic defects in amorphous SiCN and Si3N4 dielectrics for ULSI applications (2010)
  • Author(s): K. Kobayashi
  • Organizer: Asia Pacific Interfinish 2010
  • Place of Presentation: Singapole
• [Presentation] Internal Repair for Plasma Damaged Low-k Films by Methylating Chemical Vapor (2010)
  • Author(s): S. Nagano, K. Sakoda, S. Hasaka, and K. Kobayashi
  • Organizer: Advanced Metallization Conference 2010 : 20th Asian Session
  • Place of Presentation: Tokyo
• [Presentation] 低誘電率SiCN膜の不揮発性メモリデバイスへの応用 (2010)
  • Author(s): 立崎悟史、渡辺紘章、五反田慎、小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
• [Presentation] 低誘電率紫外線照射を行ったSi_3N_4膜における電気伝導機構の検討(I) (2010)
  • Author(s): 石川貢吉、浅妻裕文、渡辺紘章、村田龍紀、浅井孝祐、土本淳一、小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
• [Presentation] 低誘電率紫外線照射を行ったSi_3N_4膜における電気伝導機構の検討(II) (2010)
  • Author(s): 浅妻裕文、石川貢吉、渡辺紘章、村田龍紀、浅井孝祐、土本淳一、小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
• [Presentation] 低誘電率紫外線照射を行ったSi_3N_4膜における電気伝導機構の検討(III) (2010)
  • Author(s): 渡辺紘章、石川貢吉、浅妻裕文、渡辺紘章、村田龍紀、浅井孝祐、土本淳一、小林清輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学
• [Remarks]
  • URL: http://www.ei.u-tokai.ac.jp/Lab/kkbys/index.html
• [Remarks]
  • URL: http://www.ei.u-tokai.ac.jp/Lab/kkbys/index.html
• [Remarks]
  • URL: http://www.ei.u-tokai.ac.jp/Lab/kkbys/index.html
• [Patent(Industrial Property Rights)] 不揮発性半導体メモリ装置及びその製造方法、並びに電荷蓄積膜 (2011)
  • Inventor(s): 座間秀昭、高木牧子、小林清輝、渡辺紘章、高原優
  • Industrial Property Rights Holder: 学校法人東海大学、(株)アルバック
  • Filing Date: 2011-07-28
  • Overseas
• [Patent(Industrial Property Rights)] 不揮発性半導体メモリ装置及びその製造方法、並びに電荷蓄積膜 (2011)
  • Inventor(s): 座間秀昭、高木牧子、小林清輝、渡辺紘章、高原優
  • Industrial Property Rights Holder: 学校法人東海大学、(株)アルバック
  • Filing Date: 2011-07-29
  • Overseas
• [Patent(Industrial Property Rights)] 不揮発性半導体メモリ装置及びその製造方法、並びに電荷蓄積膜 (2011)
  • Inventor(s): 座間秀昭、高木牧子、小林清輝、渡辺紘章、高原優
  • Industrial Property Rights Holder: 学校法人東海大学、(株)アルバック
  • Filing Date: 2011-07-28
  • Overseas
• [Patent(Industrial Property Rights)] 不揮発性半導体メモリ装置及びその製造方法、並びに電荷蓄積膜 (2011)
  • Inventor(s): 座間秀昭、高木牧子、小林清輝、渡辺紘章、高原優
  • Industrial Property Rights Holder: 学校法人東海大学、(株)アルバック
  • Filing Date: 2011-07-29
  • Overseas
• [Patent(Industrial Property Rights)] 不揮発性半導体記憶装置及びその製造方法 (2009)
  • Inventor(s): 小林清輝
  • Industrial Property Rights Holder: 学校法人東海大学
  • Industrial Property Number: 2010-540453
  • Filing Date: 2009-11-17
• [Patent(Industrial Property Rights)] 不揮発性半導体記憶装置及びその製造方法 (2009)
  • Inventor(s): 小林清輝
  • Industrial Property Rights Holder: 学校法人東海大学
  • Filing Date: 2009-11-17
  • Overseas