| Project/Area Number |
21654084
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Plasma science
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
KANEKO Toshiro 東北大学, 大学院・工学研究科, 准教授 (30312599)
KATOU Toshiaki 東北大学, 大学院・工学研究科, 助教 (20502082)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,210,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2009: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | プラズマ応用 / グラフェン / ソフトプラズマ / ドーピング / バンドギャップ / 電界効果トランジスタ |
|---|
| Research Abstract |
A transfer-free method for growing graphene directly on a SiO2 substrate has been realized for the first time by plasma chemical vapor deposition (PCVD). Using this method, high-quality single-layer graphene sheets can be selectively grown between a Ni film and the SiO2 substrate. Systematic investigations reveal that the relatively thin Ni layer and PCVD are critical to the success of this unique method of graphene growth. Selective edge functionalization of graphene is also realized by mild plasma treatment. The electrical transport properties of graphene can be tuned from p-to n-type with our developed mild plasma treatment.
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