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Innovative hybrid tandem-type white LED

Research Project

Project/Area Number 21686034
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionMeijo University

Principal Investigator

IWAYA Motoaki  名城大学, 理工学部, 准教授 (40367735)

Project Period (FY) 2009 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2009: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Keywords半導体 / GaInN / 超格子 / レーザリフトオフ / 緑・赤色領域 / トンネル接合 / 窒化物半導体太陽電池 / p型GaInN / タンデム構造 / 緑・赤領域 / GaN / LED / III族窒化物半導体 / Pn接合 / 光の3原色 / 透明導電膜
Research Abstract

In this study, we proceed following the establishment of fundamental technology for nitride based semiconductor emitters
(1) Technology for fabrication of GaInN based LED with wavelength region from violet to red.
(2) Moth-eye technology
(3) Laser lift off process
(4) Ag-Pd-Cu alloys high reflective contact
(5) Transparent contact
(6) DBR
(7) High hole concentration p-type GaInN
In addition, we have advanced the realization of a new device by applying these techniques.

Report

(4 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • 2009 Annual Research Report
  • Research Products

    (89 results)

All 2012 2011 2010 2009

All Journal Article (41 results) (of which Peer Reviewed: 41 results) Presentation (39 results) Book (4 results) Patent(Industrial Property Rights) (5 results)

  • [Journal Article] Laser lift-off of AlN/sapphire for UV light-emitting diodes2012

    • Author(s)
      H. Aoshima, K. Takeda, K. Takehara, S. Ito, M. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      physica status solidi(c)

      Volume: Vol.9 Pages: 753-753

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of GaN and AlGaN on(100)β-Ga2O3 substrates2012

    • Author(s)
      S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    • Journal Title

      physica status solidi(c)

      Volume: Vol.9 Pages: 519-519

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors2012

    • Author(s)
      K. Ikeda, Y. Isobe, H. Ikki, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
    • Journal Title

      physica status solidi(c)

      Volume: Vol.9 Pages: 942-942

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Properties of nitride-based photovoltaic cells under concentrated light illumination2012

    • Author(s)
      S. Yamamoto, M. Mori, Y. Kuwahara, T. Fujii, T. Nakao, S. Kondo, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      Rapid Research Letters

      Volume: Vol.6 Pages: 145-145

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Epitaxial Indium Tin Oxide Film Deposited on Sapphire Substrate by Solid-Source Electron Cyclotron Resonance Plasma2012

    • Author(s)
      S. Kaneko, H. Torii, M. Soga, K. Akiyama, M. Iwaya, M. Yoshimoto, and T. Amazawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51

    • NAID

      210000140049

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Indium-Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes2012

    • Author(s)
      K. Takehara, K. Takeda, S. Ito, H. Aoshima, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H Amano
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51 Pages: 42101-42101

    • NAID

      210000140419

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth and light properties of fluorescent SiC for white LEDs2012

    • Author(s)
      M. Syvajarvi, R. Yakimova, M. Iwaya, T. Takeuchi, I. Akasaki, and S Kamiyama
    • Journal Title

      Materials Science Forum

      Volume: Vols. 717-720 Pages: 87-92

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of GaN and AlGaN on (100) β-Ga203 substrates2012

    • Author(s)
      Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
    • Journal Title

      physica status solidi c

      Volume: 9 Issue: 3-4 Pages: 519-522

    • DOI

      10.1002/pssc.201100499

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] その場観察X線回折測定を用いた窒化物半導体の有機金属化合物気相成長2011

    • Author(s)
      飯田大輔、岩谷素顕、竹内哲也、上山智、赤崎勇
    • Journal Title

      日本結晶成長学会誌

      Volume: Vol.38 Pages: 227-227

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Microstructures of GaInN/GaInN Superlattices on GaN Substrates2011

    • Author(s)
      T. Sugiyama, Y. Kuwahara, Y. Isobe, T. Fujii, K. Nonaka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H Amano
    • Journal Title

      Applied Physics Express

      Volume: Vol.4 Pages: 15701-15701

    • NAID

      10027782720

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fluorescent SiC and its application to white light-emitting diodes2011

    • Author(s)
      S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syvajarvi, and R. Yakimova
    • Journal Title

      Journal of Semiconductors

      Volume: Vol.32 Pages: 13004-13004

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate2011

    • Author(s)
      Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      Applied Physics Express

      Volume: Vol.4 Pages: 21001-21001

    • NAID

      10027782804

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011

    • Author(s)
      T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      physica status solidi(c)

      Volume: Volume 8 Pages: 2463-2465

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate2011

    • Author(s)
      T. Nakao, T. Fujii, T. Sugiyama, S. Yamamoto, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      Applied Physics Express

      Volume: Vol.4 Pages: 101001-101001

    • NAID

      10029790429

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011

    • Author(s)
      T.Fujii, Y.Kuwahara, D.Iida, Y.Fujiyama, Y.Morita, T.Sugiyama, Y.Isobe, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
    • Journal Title

      physica status solidi c

      Volume: 8 Issue: 7-8 Pages: 2463-2465

    • DOI

      10.1002/pssc.201001152

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells2011

    • Author(s)
      Kazuhio Ban, Jun-ichi Yamamoto, Kenichro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
    • Journal Title

      Applied Physics Express

      Volume: 4 Issue: 5 Pages: 052101-052101

    • DOI

      10.1143/apex.4.052101

    • NAID

      10028210215

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fluorescent SiC and its application to white light-emitting diodes2011

    • Author(s)
      S.Kamiyama, M.Iwaya, T.Takeuchi, I.Akasaki, M.Syvajarvi, R.Yakimova
    • Journal Title

      Journal of Semiconductors

      Volume: 32 Issue: 1 Pages: 013004-013004

    • DOI

      10.1088/1674-4926/32/1/013004

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate2011

    • Author(s)
      T.Nakao, T.Fujii, T.Sugiyama, S.Yamamoto, D.Iida, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
    • Journal Title

      Applied Physics Express

      Volume: 4 Issue: 10 Pages: 101001-101001

    • DOI

      10.1143/apex.4.101001

    • NAID

      10029790429

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Microstructures of GaInN/GaInN Superlattices on GaN Substrates2011

    • Author(s)
      T.Sugiyama, Y.Kuwahara, Y.Isobe, T.Fujii, K.Nonaka, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
    • Journal Title

      Applied Physics Express

      Volume: 4 Pages: 15701-15701

    • NAID

      10027782720

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010

    • Author(s)
      R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su
    • Journal Title

      physica status solidi(c)

      Volume: Vol.7 Pages: 2180-2182

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth and characterization of GaN grown on moth-eye patterned sapphire substrates2010

    • Author(s)
      A. Ishihara, R. Kawai, T. Kitano, A. Suzuki, T. Kondo, M. Iwaya, H. Amano, S. Kamiyama, and I. Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.7 Pages: 2056-2058

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nitride-based light-emitting solar cell2010

    • Author(s)
      Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.7 Pages: 1807-1809

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Compensation effect of Mg-doped aand c-plane GaN films grown by metalorganic vapor phase epitaxy2010

    • Author(s)
      D. Iida, K. Tamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 312 Pages: 3131-3135

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] GaInN/GaN p-i-n light-emitting solar cells2010

    • Author(s)
      Y. Fujiyama, Y. Kuwahara, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.7 Pages: 2382-2385

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate2010

    • Author(s)
      Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Journal Title

      Applied Physics Express

      Volume: Vol.3 Pages: 111001-111001

    • NAID

      10027441681

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO2010

    • Author(s)
      Z.H.Wu, K.W.Sun, Q.Y.Wei, A.M.Fischer, F.A.Ponce, Y.Kawai, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
    • Journal Title

      Applied Physics Letters

      Volume: 96 Pages: 71909-71909

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010

    • Author(s)
      R.Kawai, T.Kondo, A.Suzuki, F.Teramae, T.Kitano, K.Tamura, H.Sakurai, M.Iwaya, H.Amano, S.Kamiyama, I.Akasaki, M.Chen, A.Li, K.Su
    • Journal Title

      pnysica status solidi (c)

      Volume: 7 Pages: 2180-2182

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy2010

    • Author(s)
      D.Iida, K.Tamura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: 312 Pages: 3131-3135

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaInN/GaN p-i-n light-emitting solar cells2010

    • Author(s)
      Y.Fujiyama, Y.Kuwahara, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
    • Journal Title

      physica status solidi (c)

      Volume: 7 Pages: 2382-2385

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate2010

    • Author(s)
      Y.Kuwahara, T.Fujii, Y.Fujiyama, T.Sugiyama, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
    • Journal Title

      Applied Physics Express

      Volume: 3 Pages: 111001-111001

    • NAID

      10027441681

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN2009

    • Author(s)
      A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce
    • Journal Title

      Applied Physics Express

      Volume: Vol.2 Pages: 4102-4102

    • NAID

      10025085540

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Activation energy of Mg in a-plane Ga_<1-x> In_xN(0<x<0.17)2009

    • Author(s)
      D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      physica status solidi(b)

      Volume: Vol.246 Pages: 1188-1190

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes2009

    • Author(s)
      R. Kawai, T. Mori, W. Ochiai, A. Suzuki, M. Iwaya, H. Amano, S. Kamiyama, and I. Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.6

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-performance UV detector based on AlGaN/GaN junction heterostructure field-effect transistor with a p-GaN gate2009

    • Author(s)
      M. Iwaya, Shuichi Miura, Takahiro Fujii, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.6

    • NAID

      40016818863

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Realization of high crystalline-quality and thick GaInN films2009

    • Author(s)
      R. Senda, T. Matsubara, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.6

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy2009

    • Author(s)
      Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      physica status solidi(c)

      Volume: Vol.6

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth of thick GaInN on grooved(10-1-1) GaN/(10-1-2) 4H-SiC2009

    • Author(s)
      T. Matsubara, R. Senda, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: Volume 311 Pages: 2926-2928

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy2009

    • Author(s)
      Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      Journal of Crystal Growth

      Volume: Volume 311 Pages: 2929-2932

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN2009

    • Author(s)
      R. Senda, T. Matsubara, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Journal Title

      Applied Physics Express

      Volume: Vol.2 Pages: 61004-61004

    • NAID

      10025086396

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN2009

    • Author(s)
      Ryota Senda, Tetsuya Matsubara, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
    • Journal Title

      Applied Physics Express 2

      Pages: 61004-61004

    • NAID

      10025086396

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Activation energy of Mg in a -plane Ga_<1-x>In_xN(0<x<0.17)2009

    • Author(s)
      Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
    • Journal Title

      physica status solidi(b) 246

      Pages: 1188-1190

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Understanding the relationship between IQE and defects in nitride-based LEDs2012

    • Author(s)
      M. Iwaya and H. Amano
    • Organizer
      2012 SPIE Photonics west
    • Place of Presentation
      San Francisco USA
    • Related Report
      2011 Final Research Report
  • [Presentation] Observation of GaInN strain relaxation using in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth2012

    • Author(s)
      M. Iwaya, D. Iida, D. Tanaka, T. Sugiyama, M. Sowa, Y. Kondo, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      5th LED and solid state lighting conference
    • Place of Presentation
      Pusan, Korea
    • Related Report
      2011 Final Research Report
  • [Presentation] Understanding the relationship between IQE and defects in nitride-based LEDs2012

    • Author(s)
      Motoaki Iwaya, Hiroshi Amano
    • Organizer
      2012 SPIE Photonics west
    • Place of Presentation
      San Francisco USA(招待講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Observation of GaInN strain relaxation using in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth2012

    • Author(s)
      M.Iwaya, D.Iida, D.Tanaka, T.Sugiyama, M.Sowa, Y.Kondo, T.
    • Organizer
      5th LED and solid state lighting conference
    • Place of Presentation
      Pusan, Korea(招待講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaN系デバイス用基板としてのサファイアに対する期待2011

    • Author(s)
      岩谷素顕
    • Organizer
      第41回結晶成長国内会議
    • Place of Presentation
      つくば
    • Year and Date
      2011-11-04
    • Related Report
      2011 Final Research Report
  • [Presentation] その場観察X線回折測定を用いた窒化物半導体のMOVPE成長2011

    • Author(s)
      飯田大輔、岩谷素顕、竹内哲也、上山智、赤崎勇
    • Organizer
      第41回結晶成長国内会議
    • Place of Presentation
      つくば
    • Year and Date
      2011-11-04
    • Related Report
      2011 Final Research Report
  • [Presentation] GaN系デバイス用基板としてのサファイアに対する期待2011

    • Author(s)
      岩谷素顕
    • Organizer
      第41回結晶成長国内会議
    • Place of Presentation
      つくば(招待講演)
    • Year and Date
      2011-11-04
    • Related Report
      2011 Annual Research Report
  • [Presentation] 紫外領域LEDの現状とその可能性2011

    • Author(s)
      岩谷素顕
    • Organizer
      第25回日本レーザー医学会東海地方会(特別講演)
    • Place of Presentation
      名古屋市立大学
    • Year and Date
      2011-07-24
    • Related Report
      2011 Final Research Report
  • [Presentation] Realization of high conversion-efficiency GaInN based solar cells2011

    • Author(s)
      M. Iwaya, Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2011 Final Research Report
  • [Presentation] IQE and EQE of the nitride-based UV/DUV LEDs2011

    • Author(s)
      H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      CLEO 2011
    • Place of Presentation
      Baltimore, Maryland, USA
    • Related Report
      2011 Final Research Report
  • [Presentation] High temperature MOVPE of AlGaN for UV/DUV devices and increased pressure MOVPE of InGaN for green/yellow devices2011

    • Author(s)
      H. Amano, T. Ohata, S. Sakakura, T. Sugiyama, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Miyoshi, M. Imade, Y. Mori, K. Ban, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      E-MRS ICAM IUMRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Related Report
      2011 Final Research Report
  • [Presentation] Internal quantum efficiency of nitride-basedlight emitting devices2011

    • Author(s)
      H. Amano, T. Tabata, G. J. Park, T. Murase, T. Sugiyama, T. Tanikawa, Y. Kawai, Y. Honda, M. Yamaguchi, K. Takeda, M. Iwaya, T. Takeuchi, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Toba, Mie, Japan
    • Related Report
      2011 Final Research Report
  • [Presentation] Fabrication of the High Efficiency GaInN Based Solar Cells2011

    • Author(s)
      M. Iwaya, Y. Kuwahara, T. Fujii, Y. Morita, T. Nakao, S. Yamamoto, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
    • Organizer
      16th Semiconducting and Insulating Materials Conference(SIMC-XVI)
    • Place of Presentation
      School of Information and Communication Technology, KTH, Stockholm
    • Related Report
      2011 Final Research Report
  • [Presentation] Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method2011

    • Author(s)
      M. Iwaya, M. Yamakawa, K. Murata, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, and M. Azuma
    • Organizer
      The 9th International Conference of Nitride Semiconductors
    • Place of Presentation
      Glasgow United Kingdum
    • Related Report
      2011 Final Research Report
  • [Presentation] Metalorganic Vapor Epitaxy growth of nitrides analyzed using a novel in situ X-ray diffraction system2011

    • Author(s)
      D. Tanaka, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      The 9th International Conference of Nitride Semiconductors
    • Place of Presentation
      Glasgow United Kingdum
    • Related Report
      2011 Final Research Report
  • [Presentation] Improvement of the light extraction efficiency in the GaN based LED by moth-eye structure2011

    • Author(s)
      M. Iwaya, T. Kondo, A. Ishihara, T. Kitano, K. Naniwae, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Organizer
      The 11th International Meeting on Information Display
    • Place of Presentation
      Seoul, Korea
    • Related Report
      2011 Final Research Report
  • [Presentation] IQE and EQE of the nitride-based UV/DUV LEDs2011

    • Author(s)
      M.Iwaya, H.Amano, G.J.Park, T.Tanikawa Y.Honda, M.
    • Organizer
      CLEO 2011
    • Place of Presentation
      Baltimore, Maryland, USA(招待講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Fabrication of the High Efficiency GaInN Based Solar Cells2011

    • Author(s)
      Motaoki Iwaya, Yosuke Kuwahara, Takahiro Fujii, Yoshiki Morita
    • Organizer
      16th Semiconducting and Insulating Materials Conference (SIMC-XVI)
    • Place of Presentation
      Stockholm, Sweden(招待講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method2011

    • Author(s)
      Motoaki Iwaya, Masayasu Yamakawa, Kazuki Murata, Tetsuya
    • Organizer
      The 9th International Conference of Nitride Semiconductors
    • Place of Presentation
      Glasgow United Kingdum(招待講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Improvement of the light extraction efficiency in the GaN based LED by moth-eye structure2011

    • Author(s)
      M.Iwaya, T.Kondo, A.Ishihara, T.Kitano, K.Naniwae, T.
    • Organizer
      The 11th International Meeting on Information Display
    • Place of Presentation
      Seoul, Korea(招待講演)
    • Related Report
      2011 Annual Research Report
  • [Presentation] Realization of high-conversion-efficiency GaInN based solar cells2011

    • Author(s)
      M.Iwaya, Y.Kuwahara, T.Fujii, Y.Fujiyama, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2010 Annual Research Report
  • [Presentation] 非極性・半極性窒化物半導体の結晶成長技術2010

    • Author(s)
      岩谷素顕、上山智、天野浩、赤崎勇
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Related Report
      2011 Final Research Report
  • [Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010

    • Author(s)
      Z. H. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Q. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
    • Place of Presentation
      Beijing, China
    • Related Report
      2011 Final Research Report
  • [Presentation] Recent development and future prospects of the fabrication of GaInN-based solar cells2010

    • Author(s)
      H. Amano, T. Sugiyama, Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      The 37th International Conference of Compound Semiconductors
    • Place of Presentation
      Takamatsu
    • Related Report
      2011 Final Research Report 2010 Annual Research Report
  • [Presentation] Microstructure of GaInN/GaInN Superlattice on GaN Substrate2010

    • Author(s)
      T.Sugiyama, Y.Kuwahara, Y.Isobe, T.Fujii, K.Nonaka, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
    • Organizer
      International Workshop on Nitride semiconductors
    • Place of Presentation
      Tampa, Florida USA
    • Related Report
      2010 Annual Research Report
  • [Presentation] 非極性・半極性窒化物半導体の結晶成長技術2010

    • Author(s)
      岩谷素顕、上山智、天野浩、赤崎勇
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学(招待講演)
    • Related Report
      2010 Annual Research Report
  • [Presentation] Role of stacking faults in misfit strain relaxation in m-plane InGaN quantum wells2010

    • Author(s)
      A.M.Fischer, Z.H.Wu, F.A.Ponce, R.Senda, D.Iida, M.Iwaya, H.Amano
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing, China
    • Related Report
      2010 Annual Research Report
  • [Presentation] Homoepitaxial growth of m-plane GaN film on miscut GaN substrates grown by Na flux method2010

    • Author(s)
      Y.Isobe, D.Iida, T.Sakakibara, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, M.Imade, Y.Kitaoka, Y.Mori
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Montpellier, France
    • Related Report
      2010 Annual Research Report
  • [Presentation] Fabrication of nitride-based solar cells on freestanding GaN substrate2010

    • Author(s)
      Y.Kuwahara, Y.Fujiyama, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Montpellier, France
    • Related Report
      2010 Annual Research Report
  • [Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010

    • Author(s)
      Hiroshi Amano, Masahito Yamaguchi, Yoshio Honda, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
    • Organizer
      The 16th International Conference on Crystal Growth(ICCG-16)
    • Place of Presentation
      Beijing, China
    • Related Report
      2010 Annual Research Report
  • [Presentation] Optimization of Initial Growth of the Nonpolar m-plane and a-plane GaN Grown on LPE-GaN Substrates by Na Flux Method2010

    • Author(s)
      Y.Isobe, D.Iida, T.Sakakibara, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Imade, Y.Kitaoka, Y.Mori
    • Organizer
      International Workshop on Nitride semiconductors(IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Related Report
      2010 Annual Research Report
  • [Presentation] High-InN-molar-fraction Nitride-based Solar Cells using GaInN/GaInN Superlattice2010

    • Author(s)
      Takahiro Fujii, Yosuke Kuwahara, Daisuke Iida, Yasuharu Fujiyama, Yoshiki Morita, Toru Sugiyama, Yasuhiro Isobe, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
    • Organizer
      International Workshop on Nitride semiconductors(IWN2010)
    • Place of Presentation
      Tampa, Florida USA
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaN基板を用いた窒化物太陽電池の特性評価2010

    • Author(s)
      桑原洋介、藤山泰治、森田義己、藤井崇裕、杉山徹、岩谷素顕、上山智、天野浩、赤崎勇
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaInN/GaInN超格子構造を用いた窒化物半導体太陽電池の高性能化2010

    • Author(s)
      桑原洋介、藤山泰治、森田義己、藤井崇裕、杉山徹、岩谷素顕、上山智、天野浩、赤崎勇
    • Organizer
      窒化物ナノ・エレクトロニクス材料研究センター講演会
    • Place of Presentation
      東北大学
    • Related Report
      2010 Annual Research Report
  • [Presentation] 持続可能な社会システム構築のための窒化物半導体の役割2009

    • Author(s)
      天野浩、岩谷素顕、上山智、赤崎勇
    • Organizer
      日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大小金井キャンパス1号館1階ホール
    • Related Report
      2011 Final Research Report
  • [Presentation] Growth and conductivity control of high-quality-thick GaInN for the realization of high-efficiency photovoltaic cells2009

    • Author(s)
      H. Amano, Y. Kuwahara, Y. Fujiyama, Y. Morita, D. Iida, M. Iwaya, S. Kamiyama, and I. Akasaki
    • Organizer
      The 2^<nd> Photonics and OptoElectronics Meetings(POEM 2009)
    • Place of Presentation
      Uhan, China
    • Related Report
      2011 Final Research Report
  • [Presentation] Strain control in GaInN/GaN multiple quantum wells for high-performance green-light emitters2009

    • Author(s)
      M. Iwaya, D. Iida, T. Matsubara, S. Kamiyama, H. Amano, I. Akasaki
    • Organizer
      E-MRS Fall Meeting
    • Place of Presentation
      Warsaw, Poland
    • Related Report
      2011 Final Research Report
  • [Presentation] High-performance group III nitride-based light-emitting solar cells(LESCs)2009

    • Author(s)
      M. Iwaya, Y. Kuwahara, Y. Fujiyama, D. Iida, S. Kamiyama, H. Amano, and I. Akasaki
    • Organizer
      The International Conference on Advanced Materials(ICAM)
    • Place of Presentation
      Brazil
    • Related Report
      2011 Final Research Report
  • [Presentation] High-performance group-III-nitride-based light-emitting solar cells(LESCs)2009

    • Author(s)
      M.Iwaya, Y.Kuwahara, Y.Fujiyama, D.Iida, S.Kamiyama, H.Amano, I.Akasaki
    • Organizer
      The International Conference on Advanced Materials(ICAM)
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Related Report
      2009 Annual Research Report
  • [Book] 第3章第1節"MOVPE-サファイア基板上へのc面GaNの成長メカニズム"2012

    • Author(s)
      岩谷素顕
    • Publisher
      サイエンスアンドテクノロジー
    • Related Report
      2011 Final Research Report
  • [Book] 月刊ディスプレイ2月号「超高輝度GaN系LEDの開発動向」2010

    • Author(s)
      岩谷素顕
    • Total Pages
      6
    • Publisher
      テクノタイムズ社
    • Related Report
      2009 Annual Research Report
  • [Book] 窒化物基板および格子整合基板の成長とデバイス特性2009

    • Author(s)
      岩谷素顕、川島毅士、飯田大輔、千田亮太、上山智、天野浩、赤崎勇
    • Publisher
      CMC出版
    • Related Report
      2011 Final Research Report
  • [Book] オプトロニクス9月号「注目の無極性面・半極性面窒化物半導体発光デバイス」2009

    • Author(s)
      岩谷素顕
    • Total Pages
      6
    • Publisher
      テクノタイムズ社
    • Related Report
      2009 Annual Research Report
  • [Patent(Industrial Property Rights)] 白色発光ダイオード2010

    • Inventor(s)
      岩谷素顕、上山智、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Patent Publication Number
      2011-249460
    • Filing Date
      2010-05-25
    • Related Report
      2011 Final Research Report
  • [Patent(Industrial Property Rights)] 半導体素子、及び半導体素子の転位低減方法2010

    • Inventor(s)
      岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
    • Industrial Property Rights Holder
      名城大学
    • Patent Publication Number
      2012-009784
    • Filing Date
      2010-06-28
    • Related Report
      2011 Final Research Report
  • [Patent(Industrial Property Rights)] 特許半導体素子、及び半導体素子の転位低減方法2010

    • Inventor(s)
      岩谷素顕、竹内哲也、上山智、天野浩、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Number
      2010-146772
    • Filing Date
      2010
    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] 特許III族窒化物系太陽電池2010

    • Inventor(s)
      岩谷素顕、竹内哲也、上山智、天野浩、赤崎勇
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Number
      2010-146771
    • Filing Date
      2010
    • Related Report
      2010 Annual Research Report
  • [Patent(Industrial Property Rights)] 特許III族窒化物系太陽電池及びその製造方法2010

    • Inventor(s)
      岩谷素顕、竹内哲也、上山智、天野浩
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Number
      2010-146773
    • Filing Date
      2010
    • Related Report
      2010 Annual Research Report

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Published: 2009-04-01   Modified: 2016-04-21  

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