Innovative hybrid tandem-type white LED
| Project/Area Number |
21686034
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Meijo University |
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Principal Investigator |
IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
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| Project Period (FY) |
2009 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥25,350,000 (Direct Cost: ¥19,500,000、Indirect Cost: ¥5,850,000)
Fiscal Year 2011: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2010: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2009: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
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| Keywords | 半導体 / GaInN / 超格子 / レーザリフトオフ / 緑・赤色領域 / トンネル接合 / 窒化物半導体太陽電池 / p型GaInN / タンデム構造 / 緑・赤領域 / GaN / LED / III族窒化物半導体 / Pn接合 / 光の3原色 / 透明導電膜 |
|---|
| Research Abstract |
In this study, we proceed following the establishment of fundamental technology for nitride based semiconductor emitters
(1) Technology for fabrication of GaInN based LED with wavelength region from violet to red.
(2) Moth-eye technology
(3) Laser lift off process
(4) Ag-Pd-Cu alloys high reflective contact
(5) Transparent contact
(6) DBR
(7) High hole concentration p-type GaInN
In addition, we have advanced the realization of a new device by applying these techniques.
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Report
(4 results)
Research Products
(89 results)
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[Journal Article] Properties of nitride-based photovoltaic cells under concentrated light illumination2012
Author(s)
S. Yamamoto, M. Mori, Y. Kuwahara, T. Fujii, T. Nakao, S. Kondo, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
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Journal Title
Rapid Research Letters
Volume: Vol.6
Pages: 145-145
Related Report
Peer Reviewed
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[Journal Article] GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate2011
Author(s)
Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
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Journal Title
Applied Physics Express
Volume: Vol.4
Pages: 21001-21001
NAID
Related Report
Peer Reviewed
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[Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011
Author(s)
T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
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Journal Title
physica status solidi(c)
Volume: Volume 8
Pages: 2463-2465
Related Report
Peer Reviewed
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[Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011
Author(s)
T.Fujii, Y.Kuwahara, D.Iida, Y.Fujiyama, Y.Morita, T.Sugiyama, Y.Isobe, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
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Journal Title
physica status solidi c
Volume: 8
Issue: 7-8
Pages: 2463-2465
DOI
Related Report
Peer Reviewed
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[Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010
Author(s)
R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su
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Journal Title
physica status solidi(c)
Volume: Vol.7
Pages: 2180-2182
Related Report
Peer Reviewed
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[Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010
Author(s)
R.Kawai, T.Kondo, A.Suzuki, F.Teramae, T.Kitano, K.Tamura, H.Sakurai, M.Iwaya, H.Amano, S.Kamiyama, I.Akasaki, M.Chen, A.Li, K.Su
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Journal Title
pnysica status solidi (c)
Volume: 7
Pages: 2180-2182
Related Report
Peer Reviewed
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[Presentation] IQE and EQE of the nitride-based UV/DUV LEDs2011
Author(s)
H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
Organizer
CLEO 2011
Place of Presentation
Baltimore, Maryland, USA
Related Report
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[Presentation] High temperature MOVPE of AlGaN for UV/DUV devices and increased pressure MOVPE of InGaN for green/yellow devices2011
Author(s)
H. Amano, T. Ohata, S. Sakakura, T. Sugiyama, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Miyoshi, M. Imade, Y. Mori, K. Ban, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
Organizer
E-MRS ICAM IUMRS 2011 Spring Meeting
Place of Presentation
Nice, France
Related Report
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[Presentation] Internal quantum efficiency of nitride-basedlight emitting devices2011
Author(s)
H. Amano, T. Tabata, G. J. Park, T. Murase, T. Sugiyama, T. Tanikawa, Y. Kawai, Y. Honda, M. Yamaguchi, K. Takeda, M. Iwaya, T. Takeuchi, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori
Organizer
5th Asia-Pacific Workshop on Widegap Semiconductors
Place of Presentation
Toba, Mie, Japan
Related Report
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[Presentation] Fabrication of the High Efficiency GaInN Based Solar Cells2011
Author(s)
M. Iwaya, Y. Kuwahara, T. Fujii, Y. Morita, T. Nakao, S. Yamamoto, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
Organizer
16th Semiconducting and Insulating Materials Conference(SIMC-XVI)
Place of Presentation
School of Information and Communication Technology, KTH, Stockholm
Related Report
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[Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010
Author(s)
Z. H. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Q. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
Organizer
The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
Place of Presentation
Beijing, China
Related Report
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[Presentation] Microstructure of GaInN/GaInN Superlattice on GaN Substrate2010
Author(s)
T.Sugiyama, Y.Kuwahara, Y.Isobe, T.Fujii, K.Nonaka, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
Organizer
International Workshop on Nitride semiconductors
Place of Presentation
Tampa, Florida USA
Related Report
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[Presentation] Homoepitaxial growth of m-plane GaN film on miscut GaN substrates grown by Na flux method2010
Author(s)
Y.Isobe, D.Iida, T.Sakakibara, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, M.Imade, Y.Kitaoka, Y.Mori
Organizer
The 3rd International Symposium on Growth of III-Nitrides
Place of Presentation
Montpellier, France
Related Report
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[Presentation] Optimization of Initial Growth of the Nonpolar m-plane and a-plane GaN Grown on LPE-GaN Substrates by Na Flux Method2010
Author(s)
Y.Isobe, D.Iida, T.Sakakibara, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Imade, Y.Kitaoka, Y.Mori
Organizer
International Workshop on Nitride semiconductors(IWN2010)
Place of Presentation
Tampa, Florida USA
Related Report
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[Presentation] High-InN-molar-fraction Nitride-based Solar Cells using GaInN/GaInN Superlattice2010
Author(s)
Takahiro Fujii, Yosuke Kuwahara, Daisuke Iida, Yasuharu Fujiyama, Yoshiki Morita, Toru Sugiyama, Yasuhiro Isobe, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
Organizer
International Workshop on Nitride semiconductors(IWN2010)
Place of Presentation
Tampa, Florida USA
Related Report
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