Superlattice semiconductor photocathode for the electron beam source with a high brightness and a long NEA-surface lifetime.

• Project/Area Number: 21740305
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Atomic/Molecular/Quantum electronics
• Research Institution: The Institute of Physical and Chemical Research
• Principal Investigator: NISHITANI Tomohiro 独立行政法人理化学研究所, 延與放射線研究室, 客員研究員 (40391320)
• Project Period (FY): 2009 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2010: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000); Fiscal Year 2009: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
• Keywords: フォトカソード / 高輝度電子源 / ガリウムヒ素半導体 / 超格子半導体 / 負電子親和力表面 / 長寿命化 / 高耐久化 / スピン偏極電子源

Research Abstract

The aim of this study is the realization of the novel electron source using a semiconductor photocathode with high brightness and long NEA-surface-lifetime. This study found that the quantum confinement effect in a superlattice structure has the advantage of small energy spread of extracted electrons and the semiconductor which has small electron affinity and large band-gap energy had the advantage of long NEA-surface-lifetime. The p-GaN photocathode with a bulk structure for the long NEA-surface-lifetime and the InGaN-GaN superlattice photocathode for the generation of photoelectrons with small energy spread ware developed. As a successful result, the p-GaN photocathode achieved ten times longer lifetime than the GaAs photocathode with a bulk structure known as the conventional photocathode and the effective quantum confinement effect was observed by the quantum yield spectrum of the InGaN-GaN superlattice photocathode.

Research Products

• [Journal Article] GaN半導体型フォトカソードの量子効率の寿命測定と波長依存性 (2012)
  • Author(s): 早瀬和哉
  • Journal Title: 電気学会論文誌、IEEJ Transaction Volume: (In press)
  • Peer Reviewed
• [Journal Article] Superlattice Photocathode for High Brightness and Long NEA-surface lifetime (2011)
  • Author(s): T. Nishitani, M. Tabuchi, K. Motoki, T. Takashima, A. Era, Y. Takeda
  • Journal Title: Journal of Physics : Conference Series Volume: 298 Pages: 012010-012010
  • DOI: 10.1088/1742-6596/298/1/012010
  • Peer Reviewed
• [Journal Article] A study on XAFS analysis of Cs/GaAs NEA surface (2011)
  • Author(s): Atsushi Era, Masao Tabuchi, Tomohiro Nishitani, and Yoshikazu Takeda
  • Journal Title: Journal of Physics : Conference Series Volume: 298 Pages: 012012-012012
  • DOI: 10.1088/1742-6596/298/1/012012
  • Peer Reviewed
• [Journal Article] A study of an electron affinity of cesium telluride thin film (2011)
  • Author(s): H Sugiyama, K Ogawa, J Azuma, K Takahashi, M Kamada, T Nishitani, M Tabuchi, T Motoki, K Takashima, A Era and Y Takeda
  • Journal Title: Journal of Physics : Conference Series Volume: 298 Pages: 012014-012014
  • DOI: 10.1088/1742-6596/298/1/012014
  • Peer Reviewed
• [Journal Article] High Brightness Spin-Polarized Electron Source using Semiconductor Photocathodes (2009)
  • Author(s): Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro
  • Journal Title: Japanese Journal of Applied Physics Volume: 48 Issue: 6S Pages: 06FF02-06FF02
  • DOI: 10.1143/jjap.48.06ff02
  • NAID: 210000066935
• [Journal Article] Superlattice Photocathode With High Brightness And Long NEA-surface Lifetime (2009)
  • Author(s): Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro
  • Journal Title: The American Institute of Physics : Conference Proceedings Volume: Volume1149 Pages: 1047-1051
  • DOI: 10.1063/1.3215590
  • Peer Reviewed
• [Journal Article] High Brightness Spin-Polarized Electron Source using Semiconductor Photocathodes (2009)
  • Author(s): Tomohiro Nishitani
  • Journal Title: Japanese journal of Applied Physics 48
  • NAID: 210000066935
  • Peer Reviewed
• [Journal Article] Superlattice Photocathode With High Brightness And Long NEA-surface Lifetime (2009)
  • Author(s): Tomohiro Nishitani
  • Journal Title: AIP Conference Proceedings 1149 Pages: 1047-1051
  • Peer Reviewed
• [Journal Article] Quantum yield degradation from extraction of photocurrent and residual gas in a p-GaN photocathode with an NEA surface Kazuya Hayase
  • Author(s): Tomohiro Nishitani, Takashi Meguro
  • Journal Title: The Electronic Journal Edition of IEEJ Transactions
  • Peer Reviewed
• [Journal Article] Superlattice Photocathode for High Brightness and Long NEA-surface lifetime
  • Author(s): Tomohiro Nishitani
  • Journal Title: Journal of Physics Volume: (In press)
• [Journal Article] A study on XAFS analysis of Cs/GaAs NEA surface
  • Author(s): Atsushi Era
  • Journal Title: Journal of Physics Volume: (In press)
• [Presentation] 超格子構造を持つ半導体フォトカソードを用いた電子源の高輝度化 (2011)
  • Author(s): 西谷智博
  • Organizer: 日本顕微鏡学会
  • Place of Presentation: 福岡
  • Year and Date: 2011-05-18
• [Presentation] 高耐久・高輝度AlGaAs-GaAs超格子フォトカソードの開発 (2010)
  • Author(s): 西谷智博
  • Organizer: 第4回フォトカソード研究会
  • Place of Presentation: 広島県東広島市
  • Year and Date: 2010-11-12
• [Presentation] 超格子半導体フォトカソードを用いたパルス電子ビーム源の開発 (2010)
  • Author(s): 西谷智博
  • Organizer: 第66回日本顕微鏡学会学術講演会
  • Place of Presentation: 愛知県名古屋市
  • Year and Date: 2010-05-23
• [Presentation] 超格子半導体フォトカソードを用いたパルス電子ビーム源の開発 (2010)
  • Author(s): 西谷智博
  • Organizer: 日本顕微鏡学会学術講演会
  • Place of Presentation: 愛知県名古屋市
  • Year and Date: 2010-05-23
• [Presentation] 負電子親和力表面の半導体を用いた30keVフォトカソード電子銃の開発 (2009)
  • Author(s): 西谷智博,田渕雅夫,竹田美和,鈴木祐史,元木和也
  • Organizer: 日本顕微鏡学会第64回学術講演会
  • Place of Presentation: 宮城県仙台国際センター
  • Year and Date: 2009-05-26
• [Presentation] 負電子親和力表面を持つ半導体フォトカソードの半導体材料と電子源装置の開発 (2009)
  • Author(s): 西谷智博
  • Organizer: 第3回フォトカソード研究会
  • Place of Presentation: 愛知県名古屋大学
• [Presentation] High brightness electron source for pulse electron gun using semiconductor photocathodes with NEA surface (2009)
  • Author(s): Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Kazuya Motoki, Kento Takashima
  • Organizer: The Twelfth Frontiers of Electron Microscopy in Materials Science(FEMMS2009)
  • Place of Presentation: Sasebo, Japan
• [Presentation] Development of Pulse Electron Gun with High Brightness Electron Source Using Superlattice Photocathode (2009)
  • Author(s): Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki and Takashi Meguro
  • Organizer: OIST Workshop,"Fundamentals of Quantum Mechanics and Its Applications"
  • Place of Presentation: Okinawa, Japan
• [Presentation] Development of Pulse Electron Gun with High Brightness Electron Source Using Superlattice Photocathode (2009)
  • Author(s): 西谷智博
  • Organizer: OIST Workshop, "Fundamentals of Quantum Mechanics and Its Applications"
  • Place of Presentation: Okinawa, Japan
• [Presentation] 負電子親和力表面の半導体を用いた30keV フォトカソード電子銃の開発 (2009)
  • Author(s): 西谷智博
  • Organizer: 日本顕微鏡学会第64 回学術講演会
  • Place of Presentation: 仙台
• [Presentation] 負電子親和力表面を持つ半導体フォトカソードの半導体材料と電子源装置の開発 (2009)
  • Author(s): 西谷智博
  • Organizer: 第3回フォトカソード研究会
  • Place of Presentation: 名古屋大学
• [Patent(Industrial Property Rights)] PHOTOCATHODE SIMICONDUCTOR DEVICE (2010)
  • Inventor(s): 西谷智博
  • Industrial Property Rights Holder: 独立行政法人理化学研究所
  • Acquisition Date: 2010-05-06
  • Overseas
• [Patent(Industrial Property Rights)] PHOTOCATHODE SIMICONDUCTOR DEVICE (2009)
  • Inventor(s): 西谷智博
  • Industrial Property Rights Holder: 独立行政法人理化学研究所
  • Filing Date: 2009-10-27
  • Overseas