Formation of Ohmic hole injection in organic semiconductor films
Project/Area Number |
21760005
|
Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Single-year Grants |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Japan Advanced Institute of Science and Technology |
Principal Investigator |
MATSUSHIMA Toshinori Japan Advanced Institute of Science and Technology, マテリアルサイエンス研究科, 助教 (40521985)
|
Project Period (FY) |
2009 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
Keywords | 半導体 / 有機分子 / 新機能材料 / 有機・分子エレクトロニクス / 有機EL素子 / 電気物性 / 電荷移動 / デバイス設計 / 酸化モリブデン / 空間電荷制限電流 / 有機半導体 / 電荷生成 |
Research Abstract |
Current density-voltage characteristics of organic hole-only devices were evaluated when thickness of molybdenum trioxide between an ITO anode and an organic layer was changed. We found that use of optimized molybdenum trioxide thickness induces formation of Ohmic hole injection resulting from reduced hole injection barrier. Hole mobilities of a variety of organic layers were able to be estimated by analyzing the current density-voltage characteristics with a space-charge-limited current theory.
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Report
(3 results)
Research Products
(78 results)
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[Presentation] A Large Shift of Threshold Voltage of Organic Field Effect Transistor by Combination of Photocharge Generation Molecule with Charge-Trapping Polymer2010
Author(s)
Dao Thanh Toan, Satoru Yajima, Ishii Yuya, Heisuke Sakai, Toshinori Matsushima, Motonobu Murakami, Kei Ohkubo, Shunichi Fukuzumi, Hideyuki Murata
Organizer
The 2010 International Chemical Congress of Pacifis Basin Societies (Pacifichem)
Place of Presentation
Honolulu, Hawaii, USA
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