Selective formation of germanium-on-insulator structures based on liquid phase epitaxy by laser annealing
| Project/Area Number |
21760009
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
HOSOI Takuji Osaka University, 工学研究科, 助教 (90452466)
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| Project Period (FY) |
2009 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | ゲルマニウム / GOI基板 / SGOI基板 / 液相エピタキシャル成長 / 半導体基板 / SiGe(シリコンゲルマニウム) / GOI(Germanium On Insulator) / GOI (Germanium On Insulator) |
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| Research Abstract |
GOI (Ge-On-Insulator) and SGOI(SiGe-On-Insulator) structures are promising candidates for next-generation semiconductor substrate. We proposed and demonstrated the selective fabrication of single-crystalline Ge wires and high-quality fully relaxed SiGe layers on insulators by liquid-phase epitaxy.
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Report
(3 results)
Research Products
(14 results)
