| Project/Area Number |
21760268
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
IMURA Masataka National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, ICYS-MANA研究員 (80465971)
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| Project Period (FY) |
2009 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Keywords | ダイヤモンド / 窒化物半導体 / 電子デバイス / ヘテロ構造 / 窒化アルミニウム / 電界効果トランジスタ / 転位 / 透過型電子顕微鏡 / 結晶成長 / デバイス設計 / 電子電気材料 / 光スイッチ / 環境材料 |
|---|
| Research Abstract |
AlN epitaxial layers were successfully grown on diamond substrates as heteroepitaxial growth by MOVPE. The electronic devices, such as FETs, were fabricated by using AlN/diamond heterostructure. As a result, the device behaved as a p-channel FET with normally-on depletion mode. The AlN/diamond heterostructure FETs were highly promising for the next generation power electronics.
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