| Budget Amount *help |
¥196,040,000 (Direct Cost: ¥150,800,000、Indirect Cost: ¥45,240,000)
Fiscal Year 2014: ¥22,230,000 (Direct Cost: ¥17,100,000、Indirect Cost: ¥5,130,000)
Fiscal Year 2013: ¥22,100,000 (Direct Cost: ¥17,000,000、Indirect Cost: ¥5,100,000)
Fiscal Year 2012: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
Fiscal Year 2011: ¥26,520,000 (Direct Cost: ¥20,400,000、Indirect Cost: ¥6,120,000)
Fiscal Year 2010: ¥104,390,000 (Direct Cost: ¥80,300,000、Indirect Cost: ¥24,090,000)
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| Outline of Final Research Achievements |
We have studied spin-polarized lasing, which can transform electron-spin information into circular polarization properties in stimulated emission, by employing III-V compound semiconductor quantum dots (QDs) exhibiting strong suppression of spin relaxation.
Spin-injection dynamics and spin relaxation in QDs in addition to fabrication processes of QDs have been studied for the purpose of temporal spin storage during the emission. We show that Pauli spin blocking is a major factor of spin loss during the spin injection into QDs. To resolve this issue, we conclude that high density QDs and tunneling of spins from two-dimensional electron systems realize highly efficient and ultrafast spin injection into QDs. QD light emitting diodes with active layers composed of QDs and metallic ferromagnetic spin electrodes have been fabricated, which indicates circularly polarized electroluminescence reflecting efficient electron-spin injection.
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