Development of high performance large-area X-lay imaging detectors with energy discrimination capabilities

• Project/Area Number: 22240062
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Medical systems
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: YASUDA Kazuhito 名古屋工業大学, 工学研究科, 教授 (60182333)
• Co-Investigator(Kenkyū-buntansha): NIRAULA Madan 名古屋工業大学, 工学研究科, 准教授 (20345945)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥41,080,000 (Direct Cost: ¥31,600,000、Indirect Cost: ¥9,480,000); Fiscal Year 2012: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2011: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2010: ¥31,460,000 (Direct Cost: ¥24,200,000、Indirect Cost: ¥7,260,000)
• Keywords: 検査 / 診断システム / 放射線・X線 / エピタキシャル成長 / 電子デバイス / 結晶成長 / 医療診断

Research Abstract

Improvement of performance of p-like CdTe/n-CdTe/n+-Si heterojunction diode type radiation detectors has been studied. The diode type detectors were fabricated with CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. 8x8 2-dimensional imaging detector arrays were also fabricated by integrating the diode type detectors. Energy discriminated X-ray images were obtained with these arrays. 2-dimensional detector arrays with large substrates size of 24.5x24.5 mm2 and high integration density of 20x20 were also realized.

Research Products

• [Journal Article] Fabrication of radiation imagingdetector arrays using MOVPE grownthick single crystal CdTe layers on Sisubstrates (2012)
  • Author(s): K.Yasuda, M. Niraula, T. Tachi
  • Journal Title: Phys. Status. Solidi Volume: C9(8-9) Issue: 8-9 Pages: 1848-1851
  • DOI: 10.1002/pssc.201100517
  • Peer Reviewed
• [Journal Article] Dark-current characteristics ofradiation detector arrays developedusing MOVPE grown thick CdTe layers onSi substrates (2012)
  • Author(s): K.Yasuda, M. Niraula, N. Fujimura
  • Journal Title: J. Electron. Mater. Volume: 41(10) Issue: 10 Pages: 2754-2758
  • DOI: 10.1007/s11664-012-2121-7
  • Peer Reviewed
• [Journal Article] 放射線エネルギーを識別可能な画像検出器の開発 (2012)
  • Author(s): 安田和人、ニラウラマダン
  • Journal Title: 光アライアンス Volume: 23(6) Pages: 33-36
  • NAID: 40019331899
• [Journal Article] Development of Spectroscopic ImagingArrays Using Epitaxially Grown ThickSingle Crystal CdTe Layers on SiSubstrate (2012)
  • Author(s): M.Niraula, K. Yasuda, N. Fujimura
  • Journal Title: IEEE Trans. Nucl. Sci Volume: 59(6) Issue: 6 Pages: 3201-3204
  • DOI: 10.1109/tns.2012.2215628
  • Peer Reviewed
• [Journal Article] Fabrication and characterization ofX-ray spectroscopic imaging array basedon thick single crystal CdTe epitaxiallayers (2012)
  • Author(s): M.Niraula, K. Yasuda, S. Namba
  • Journal Title: IEEE Trans. Electron Devices Volume: 59(12) Issue: 12 Pages: 3450-3455
  • DOI: 10.1109/ted.2012.2222413
  • Peer Reviewed
• [Journal Article] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development (2012)
  • Author(s): M.Niraula, K.Yasuda, et al.
  • Journal Title: Proc.IEEE 19th International Workshop on the Room Temperature Semiconductor Detectors Volume: N/A
  • Peer Reviewed
• [Journal Article] Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy (2012)
  • Author(s): K.Yasuda, M.Niraula, et al.
  • Journal Title: Ext. Abstracts 2012 US Workshop on the Phys. Chem. II-VI Materials (2012, Seattle) Volume: N/A Pages: 131-134
  • Peer Reviewed
• [Journal Article] MOVPE法によるSi基板上のCdTe厚膜層を用いた放射線検出アレイの開発 (2011)
  • Author(s): 舘忠裕、安田和人、ニラウラマダン
  • Journal Title: 電子情報通信学会技報 Volume: ED2011-26 Pages: 131-134
• [Journal Article] Development of radiation imagingdevices with energy discriminationcapability using thick CdTe layersgrown on Si substrates by metal organicvapor phase epitaxy (2011)
  • Author(s): K.Yasuda, M. Niraula, Y. Agata
  • Journal Title: Proc. SPIE Volume: 7995 Pages: 79952T-79952T
  • DOI: 10.1117/12.888229
  • Peer Reviewed
• [Journal Article] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate (2011)
  • Author(s): M.Niraula, K.Yasuda, et al
  • Journal Title: 18th International Workshop on the Room Temperature Semiconductor Detectors(RTSD) (2011, Valencia, Spain) Volume: (CD-ROM)
  • Peer Reviewed
• [Journal Article] Dark-current characteristics of radiation｀detector arrays developed using MOVPE grown thick CdTe layers on Si substartes (2011)
  • Author(s): K.Yasuda, M.Niraula, et al
  • Journal Title: Ext.Abstracts, 2011 US Workshop on the Phys.Chem.II-VI Materials (2011, Chicago) Pages: 163-166
  • Peer Reviewed
• [Journal Article] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metal organic vapor phase epitaxy (2011)
  • Author(s): K.Yasuda
  • Journal Title: Proc.SPIE 7995 Volume: 7995 0n line Pages: 43-43
  • Peer Reviewed
• [Journal Article] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究 (2010)
  • Author(s): 後藤達彦、安田和人、ニラウラマダン
  • Journal Title: 電子情報通信学会技報 Volume: ED2010-29 Pages: 65-68
• [Journal Article] Electricalproperties of halogen-dopedCdTe layers on Si substrates grown bymetalorganic vapor phase epitaxy (2010)
  • Author(s): K.Yasuda, M. Niraula, H. Oka
  • Journal Title: J.Electron. Mater Volume: 39(7) Issue: 7 Pages: 1118-1123
  • DOI: 10.1007/s11664-010-1241-1
  • Peer Reviewed
• [Journal Article] CdTe厚膜のMOVPE成長と放射線検出器への応用特性 (2010)
  • Author(s): 安田和人、ニラウラマダン、岡 寛樹
  • Journal Title: 放射線 Pages: 41-48
  • NAID: 10026604059
  • Peer Reviewed
• [Journal Article] CdTe厚膜のMOVPE成長と放射線検出器への応用特性 (2010)
  • Author(s): 安田和人
  • Journal Title: 放射線 Volume: 36 Pages: 41-48
  • NAID: 10026604059
  • Peer Reviewed
• [Journal Article] Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy (2010)
  • Author(s): K.Yasuda
  • Journal Title: J.Electron.Mater. Volume: 39(7) Pages: 1118-1123
  • Peer Reviewed
• [Journal Article] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(Si基板上の厚膜CdTe層高品質化の研究) (2010)
  • Author(s): 後藤達彦
  • Journal Title: 電子情報通信学会技報 Volume: ED2010-29 Pages: 65-68
• [Presentation] Development oflarge‐area imaging arrays using epitaxTally grown thick single crystalCdTe layers on Si substrates (2013)
  • Author(s): Madan Nirau1,安田和人
  • Organizer: 2013春期第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-30
• [Presentation] MOVPE法による大面積CdTeX線γ線画像検出器に関する研究(XIII) (2013)
  • Author(s): 山下隼、ニラウラマダン、安田和人
  • Organizer: 2013春期第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-27
• [Presentation] MOVPE法による大面積CdTeX線γ線画像検出器に関する研究(XIII)-CdTe/Si成長層のアニール処理の検討一 (2013)
  • Author(s): 和嶋悠人、ニラウラマダン、安田和人
  • Organizer: 2013春期第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-27
• [Presentation] MOVPE法による大面積CdTe X線γ線画像検出器に関する研究（XIII) (2013)
  • Author(s): 山下隼、安田和人, 他
  • Organizer: 2013春期第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] MOVPE法による大面積CdTe X線γ線画像検出器に関する研究（XIII) CdTe/Si 成長層のアニール処理の検討 (2013)
  • Author(s): 和嶋悠人、安田和人, 他
  • Organizer: 2013春期第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates (2013)
  • Author(s): M.Niraula, 安田和人, 他
  • Organizer: 2013春期第60回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] CdZnTe層成長と特性評価 (2012)
  • Author(s): 和嶋悠人、ニラウラマダン、安田和人
  • Organizer: 2012秋期第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-14
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI)～検出器アレイの暗電流特性(1)～ (2012)
  • Author(s): 難波秀平、ニラウラマダン、安田和人
  • Organizer: 2012春期第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-18
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI)～検出器アレイの暗電流特性(II)～ (2012)
  • Author(s): 館忠裕、ニラウラマダン、安田和人
  • Organizer: 2012春期第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-18
• [Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力をもつX線・γ線画像検出器の開発(H) (2012)
  • Author(s): 村松慎也、ニラウラマダン、安田和人
  • Organizer: 2012春期第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力をもつX線・γ線画像検出器の開発(1) (2012)
  • Author(s): 近藤嵩輝、ニラウラマダン、安田和人
  • Organizer: 2012春期第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-17
• [Presentation] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development (2012)
  • Author(s): M. Niraula, K. Yasuda, S. Namba
  • Organizer: 19th International Workshop on the Room Temperature Semiconductor Detectors (RTSD)
  • Place of Presentation: Anaheim CA
• [Presentation] Post -growth annealing of CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy (2012)
  • Author(s): K. Yasuda, M. Niraula, S. Namba
  • Organizer: 2012 US Workshop on the Phys. Chem. II-VI Materials
  • Place of Presentation: Seattle
• [Presentation] MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development (2012)
  • Author(s): M.Niraula, K.Yasuda, et al.
  • Organizer: IEEE 19th International Workshop on the Room Temperature Semiconductor Detectors(RTSD)
  • Place of Presentation: Anaheim, USA
  • Invited
• [Presentation] Post growth annealing of CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy (2012)
  • Author(s): K.Yasuda, M.Niraula, et al.
  • Organizer: 2012 US Workshop on the Phys. Chem. II-VI Materials
  • Place of Presentation: Seattle, USA
• [Presentation] MOVPE法による大面積CdTe X線γ線画像検出器に関する研究 CdZnTe層成長と特性評価 (2012)
  • Author(s): 難波秀平, 安田和人, 他
  • Organizer: 2012秋期第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate (2011)
  • Author(s): M.Niraula, K.Yasuda, et al
  • Organizer: IEEE 18th International Workshop on the Room Temperature Semiconductor Detectors
  • Place of Presentation: Valencia, Spain(Invited)
  • Year and Date: 2011-10-25
• [Presentation] Dark-current characteristics of radiation detector arrays developed using MOVPE grown thick CdTe layers on Si substartes (2011)
  • Author(s): K.Yasuda, M.Niraula, et al
  • Organizer: 2011 us Workshop on the Phys.Chem.II-VI Materials
  • Place of Presentation: Chicago, USA
  • Year and Date: 2011-10-04
• [Presentation] Fabrication of radiation imaging detector arrays using MOVPE grown thick single crystal CdTe layers on Si substrates (2011)
  • Author(s): K.Yasuda, M.Niraula, et al
  • Organizer: 15-th International Conference on II-VI Compounds
  • Place of Presentation: Mayan Riviera, Mexico
  • Year and Date: 2011-08-23
• [Presentation] MOVPE法によるSi基板上のCdTe厚膜層を用いた放射線検出アレイの開発 (2011)
  • Author(s): 舘忠裕、犬塚博章、安田和人, 他
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 名古屋大学
  • Year and Date: 2011-05-20
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(IX) (2011)
  • Author(s): 藤村直也、ニラウラマダン、安田和人
  • Organizer: 2011春期応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-27
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(X) (2011)
  • Author(s): 館忠裕、ニラウラマダン、安田和人
  • Organizer: 2011春期応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-27
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(X) (2011)
  • Author(s): 館忠裕
  • Organizer: 2011春期応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学、神奈川県
  • Year and Date: 2011-03-27
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(IX) (2011)
  • Author(s): 藤村直也
  • Organizer: 2011春期応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学、神奈川県
  • Year and Date: 2011-03-27
• [Presentation] Dark-current characteristics of radiation detector arrays developed using MOVPE grown thick CdTe layers on Si substartes (2011)
  • Author(s): K. Yasuda, M. Niraula
  • Organizer: 2011 US Workshop on the Phys. Chem. II-VI Materials
  • Place of Presentation: Chicago
• [Presentation] Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrate (2011)
  • Author(s): M. Niraula, K. Yasuda, N. Fu j imura
  • Organizer: 18th International Workshop on the Room Temperature Semiconductor Detectors(RTSD)
  • Place of Presentation: Valencia, Spain
• [Presentation] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metal organic vapor phase epitaxy (2010)
  • Author(s): K.Yasuda
  • Organizer: 7th International Conference on Thin Film Physics and Application
  • Place of Presentation: Tongji Univ., Shanghai, China(招待講演)
• [Presentation] Hetero-epitaxial growth and doping properties of CdTe Layers by metalorganicvapor phase epitaxy (2010)
  • Author(s): K.Yasuda
  • Organizer: The 2010 International Symposium on Optoelectronic Materials and Devices
  • Place of Presentation: Chicago, USA(招待講演)
• [Presentation] Development of radiation imaging devices with energy discrimination capability using thick CdTe layers grown on Si substrates by metal organic vapor phase epitaxy
  • Author(s): K. Yasuda, M. Niraula, Y. Agata
  • Organizer: 7th International Conference on Thin Film Physics and Application
  • Place of Presentation: Tongji Univ., Shanghai, China
• [Book] MRS Symp. Proceedings Nuclear Radiation Detection Materials (2012)
  • Author(s): K. Yasuda, A. Burger, M. Fiederle
  • Publisher: MRS Spring Meeting
• [Remarks]
  • URL: http://yasuda.web.nitech.ac.jp/
• [Remarks] 中日新聞2011年11月4日掲載
• [Remarks] 日刊工業新聞 2011年11月4日 掲載
• [Remarks] 科学新聞2011年11月18日掲載
• [Remarks]
  • URL: http://yasuda.web.nitech.ac.jp/
• [Remarks]
  • URL: http://yasuda.web.nitech.ac.jp/
• [Patent(Industrial Property Rights)] 放射線検出器の製造方法 (2011)
  • Inventor(s): 安田和人,ニラウラマダン
  • Industrial Property Rights Holder: 名古屋工業大学
  • Industrial Property Number: 2011-109374
  • Filing Date: 2011-05-16
• [Patent(Industrial Property Rights)] Method for manufacturing asemiconductor radiation detector (2011)
  • Inventor(s): 安田和人,ニラウラマダン
  • Industrial Property Rights Holder: 中部TLO
  • Acquisition Date: 2011-07-06
  • Overseas
• [Patent(Industrial Property Rights)] 放射線検出器の製造方法 (2011)
  • Inventor(s): 安田和人, ニラウラマダン
  • Industrial Property Rights Holder: 名古屋工業大学
  • Industrial Property Number: 2011-109374
  • Filing Date: 2011-05-16