|Budget Amount *help
¥40,690,000 (Direct Cost: ¥31,300,000、Indirect Cost: ¥9,390,000)
Fiscal Year 2013: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
Fiscal Year 2012: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2011: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000)
Fiscal Year 2010: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Silicon heterojunction solar cells have the potential to achieve high conversion efficiencies. In order to achieve high open circuit voltages, passivation of dangling bonds on the c-Si surface is indispensable. One of the most used passivation materials for heterojunction solar cells is the hydrogenated amorphous silicon (a-Si:H). a-Si:H is known to have a high passivation quality, but it shows harmful epitaxial growth when deposited at relatively high deposition temperatures, deteriorating the passivation effect. In this study wide-bandgap amorphous silicon oxide (a-SiO:H) or nano-crystalline 3C-SiC is applied as an alternative to the conventional a-Si:H to suppress the epitaxial growth, resulting with a very low surface recombination velocity. Up to now, an efficiency of 20.1 % has been achieved with a high open circuit voltage of 708 mV, and the original goals have been met.