Growth of high quality GaN on an Si substrate

• Project/Area Number: 22360009
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Aichi Institute of Technology
• Principal Investigator: SAWAKI Nobuhiko 愛知工業大学, 工学部, 教授 (70023330)
• Co-Investigator(Renkei-kenkyūsha): IWATA Hiroyuki 愛知工業大学, 工学部, 准教授 (20261034) ; HONDA Yoshio 名古屋大学, 大学院・工学研究科, 助教 (60362274)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000); Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2011: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000); Fiscal Year 2010: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
• Keywords: 窒化物半導体 / 有機金属気相成長 / 格子欠陥 / 不純物ドーピング / シリコン基板 / 透過電子顕微鏡観察 / 遠赤外吸収スペクトル / シリコンホトニクス / MOVPE成長 / 疑似格子整合 / TEM / PL / TEM観察 / FTIR評価

Research Abstract

The role of an AlInN buffer layer and an AlN nucleation layer incorporated with small amount of In has been investigated. The threading dislocation density in the grown layer was much reduced by these two layers. The FTIR spectra in a carbon doped (1-101)AlGaN layer showed a local vibration mode which is attributed to Al-C bond. This shows that the p-type conduction is organized by the carbon sitting on an N site.

Research Products

• [Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate (2013)
  • Author(s): N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Journal Title: Proc. SPIE Volume: 8625 Pages: 6-6
  • DOI: 10.1117/12.2002738
• [Journal Article] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate (2012)
  • Author(s): T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
  • Journal Title: phys.stat.sol.(b) Volume: 249 Issue: 3 Pages: 468-471
  • DOI: 10.1002/pssb.201100445
  • Peer Reviewed
• [Journal Article] A local vibration mode in a carbon doped (1-101)AlGaN (2012)
  • Author(s): N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
  • Journal Title: Proc. SPIE Pages: 7-7
  • DOI: 10.1117/12.905529
• [Journal Article] Impurity incorporation in semipolar (1-101)GaN grown on Si substrate (2012)
  • Author(s): N.Sawaki, K.Hagiwara, T.Hikosaka, and Y.Honda
  • Journal Title: Semiconductor Science & Technology Volume: 27 Issue: 2 Pages: 5-5
  • DOI: 10.1088/0268-1242/27/2/024006
  • Peer Reviewed
• [Journal Article] High efficiency InGaN solar cell with a graded p-InGaN top layer (2012)
  • Author(s): N.Sawaki, T.Fujisawa
  • Journal Title: Proc.of SPIE Volume: 8262 Pages: 826210-826210-7
  • DOI: 10.1117/12.905531
  • Peer Reviewed
• [Journal Article] Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN (2011)
  • Author(s): Z.H.Wu, T.Tanikawa, T.Murase, Y.Y.Fang, C.Q.Chen, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
  • Journal Title: Appl. Phys. Lett. Volume: 98 Issue: 5 Pages: 98-98
  • DOI: 10.1063/1.3549561
  • Year and Date: 2011-01-31
  • Peer Reviewed
• [Journal Article] Drastic reduction of dislocation density in semipolar (11-22)GaN stripe crystal on silicon substrate by dual selective metal-organic vapor phase epitaxy (2011)
  • Author(s): T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50 Issue: 1S1 Pages: 01AD04-01AD04
  • DOI: 10.1143/jjap.50.01ad04
  • Peer Reviewed
• [Journal Article] Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates (2011)
  • Author(s): I.W.Feng, X.K.Cao, J.Li, J.Y.Lin,H.X.Jiang, N.Sawaki, Y.Honda,T.Tanikawa, and J.M.Zavada
  • Journal Title: Appl. Phys. Lett. Volume: 98 Issue: 8 Pages: 3-3
  • DOI: 10.1063/1.3556678
  • Peer Reviewed
• [Journal Article] Nitride LEDs on Si substrate (2011)
  • Author(s): N.Sawaki and Y.Honda
  • Journal Title: Science China Technological Sciences Volume: 54 Issue: 1 Pages: 38-41
  • DOI: 10.1007/s11431-010-4182-2
  • Peer Reviewed
• [Journal Article] Reduction of efficiency droop in semipolar (1101)InGaN/GaN light emitting diodes grown on patterned silicon substrates (2011)
  • Author(s): C.H.Chiu, T.Tanikawa, N.Sawaki, 他
  • Journal Title: Appl.Phys.Express Volume: 4 Issue: 1 Pages: 012105-012105
  • DOI: 10.1143/apex.4.012105
  • NAID: 10027782333
  • Peer Reviewed
• [Journal Article] Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN (2011)
  • Author(s): Z.H.Wu
  • Journal Title: Appl.Phys.Lett. Volume: 98
  • Peer Reviewed
• [Journal Article] Nitride LEDs on Si substrate (2011)
  • Author(s): N.Sawaki
  • Journal Title: Science China Volume: 54 Pages: 38-41
  • Peer Reviewed
• [Journal Article] Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates (2011)
  • Author(s): I.W.Feng
  • Journal Title: Appl.Phys.Lett. Volume: 98
  • Peer Reviewed
• [Journal Article] Optical properties of (1-101) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates (2011)
  • Author(s): C.H.Chiu
  • Journal Title: J.Crystal Growth Volume: 318 Pages: 500-504
  • Peer Reviewed
• [Journal Article] HVPE growth of a-plane GaN on a GaN template (110)Si substrate (2010)
  • Author(s): T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, and N.Sawaki
  • Journal Title: physica status solidi C Volume: 7 Issue: 7-8 Pages: 1760-1763
  • DOI: 10.1002/pssc.200983563
  • Peer Reviewed
• [Journal Article] HVPE growth of a-plane GaN on a GaN template (110) Si substrate (2010)
  • Author(s): T.Tanikawa
  • Journal Title: physica status solidi C Volume: 7 Pages: 1760-1763
  • Peer Reviewed
• [Journal Article] Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation (2010)
  • Author(s): B.J.Kim
  • Journal Title: Physica E Volume: 42 Pages: 2575-2578
  • Peer Reviewed
• [Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate (2013)
  • Author(s): K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma 2013
  • Place of Presentation: Nagoya.
  • Year and Date: 2013-01-31
• [Presentation] nda, M.Yamaguchi, and H.Amano, "Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate (2013)
  • Author(s): T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Ho
  • Organizer: ISPlasma 2013
  • Place of Presentation: Nagoya.
  • Year and Date: 2013-01-31
• [Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate (2013)
  • Author(s): S.Ito, T.Nakagita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasam 2013
  • Place of Presentation: Nagoya.
  • Year and Date: 2013-01-31
• [Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate (2013)
  • Author(s): N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: SPIE Photonics West 2013, Feb. 4
  • Place of Presentation: San Francisco (USA).
• [Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate (2013)
  • Author(s): N.Sawaki, T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: SPIE Photonics West 2013
  • Place of Presentation: San Francisco (USA)
• [Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate (2013)
  • Author(s): S.Ito, T.Nakagita, H.Iwata, N.Sawakui, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma 2012
  • Place of Presentation: Nagoya (Japan)
• [Presentation] Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate (2013)
  • Author(s): T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma 2013
  • Place of Presentation: Nagoya (Japan)
• [Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate (2013)
  • Author(s): K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma 2013
  • Place of Presentation: Nagoya (Japan)
• [Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer (2012)
  • Author(s): S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: International Workshop on NitrideSemiconductors
  • Place of Presentation: Sapporo.
  • Year and Date: 2012-10-18
• [Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE (2012)
  • Author(s): S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasam 2012
  • Place of Presentation: Kasugai.
  • Year and Date: 2012-03-07
• [Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE (2012)
  • Author(s): S.Kawakita, N.Sawaki, 他
  • Organizer: ISPlasma 2012
  • Place of Presentation: Kasugai, Aichi, Japan
  • Year and Date: 2012-03-07
• [Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate (2012)
  • Author(s): K.Hagiwara, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma 2012
  • Place of Presentation: Kasugai.
  • Year and Date: 2012-03-06
• [Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate (2012)
  • Author(s): K.Hagiwara, N.Sawaki, 他
  • Organizer: ISPlasma 2012
  • Place of Presentation: Kasugai, Aichi, Japan
  • Year and Date: 2012-03-06
• [Presentation] A local vibration mode in a carbon doped (1-101)AlGaN (2012)
  • Author(s): N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: SPIE Photonics West 2012
  • Place of Presentation: San Francisco (USA).
  • Year and Date: 2012-01-23
• [Presentation] A local vibration mode in a carbon doped (1-101)AlGaN (2012)
  • Author(s): N.Sawaki, K.Hagiwara, 他
  • Organizer: SPIE Photonics West 2012
  • Place of Presentation: SanFrancisco, CA, USA
  • Year and Date: 2012-01-23
• [Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer (2012)
  • Author(s): S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: Sapporo (Japan)
• [Presentation] Growth, characterization, and crystallographic orientation of overgrown GaN layers on nanostructures by HVPE (2011)
  • Author(s): M.J.Kim, M.J.Shin, N.Sawaki, 他
  • Organizer: 9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: Grasgow, UK
  • Year and Date: 2011-07-13
• [Presentation] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate (2011)
  • Author(s): T.Tanikawa, N.Sawaki, 他
  • Organizer: 9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
  • Place of Presentation: Grasgow, UK
  • Year and Date: 2011-07-12
• [Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate (2011)
  • Author(s): K.Hagiwara, R.Katayama, M.Amano, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
  • Place of Presentation: T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano, "High-quality GaN grown on (111)Si using an AlInN intermediate layer," Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), May 23 (2011), Toba.
  • Year and Date: 2011-05-25
• [Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate (2011)
  • Author(s): K.Hagiwara, N.Sawaki, 他
  • Organizer: Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-25
• [Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer (2011)
  • Author(s): S.Kawakita, H.Iwata, D.Kato, T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
  • Place of Presentation: Toba.
  • Year and Date: 2011-05-23
• [Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer (2011)
  • Author(s): S.Kawakita, N.Sawaki, 他
  • Organizer: Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
  • Place of Presentation: Toba, Mie, Japan
  • Year and Date: 2011-05-23
• [Presentation] Growth and properties of semipolar GaN on patterned Si substrate (2011)
  • Author(s): N.Sawaki
  • Organizer: DPG Spring Meetings, Deutsche Physikalische Gesellschaft
  • Place of Presentation: Dresden (Germany).
  • Year and Date: 2011-05-17
• [Presentation] Growth and properties of semipolar GaN on patterned Si substrate (2011)
  • Author(s): N.Sawaki
  • Organizer: DPG Spring Meetings, Deutsche Physikalische Gesellschaft
  • Place of Presentation: Dresden, Germany
  • Year and Date: 2011-03-17
• [Presentation] TEM analyses of high-quality GaN grown on (111) Si using an AlInN in termediate layer (2011)
  • Author(s): S.Kawakita
  • Organizer: ISPlasma 2011
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2011-03-07
• [Presentation] Intentional Carbon Doping to GaN by MOVPE (2011)
  • Author(s): K.Yamashita
  • Organizer: ISPlasma 2011
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2011-03-07
• [Presentation] FTIR spectra and LVMs in a carbon doped (1-101)GaN grown on a (001)Si substrate by MOVPE," ISPlasma (2011)
  • Author(s): K.Hagiwara, M.Amano, R.Katayama, N.Sawaki, Y.Honda, T.Hikosaka, T.Tanikawa, N.Koide, M.Yamaguchi, and H.Amano
• [Presentation] TEM analyses of high-quality GaN grown on (111)Si using an AlInN intermediate layer (2011)
  • Author(s): S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
  • Organizer: ISPlasma
• [Presentation] Raman spectroscopic study of residual strain in (1-101) GaN and (0001) GaN layers grown on Si substrate (2010)
  • Author(s): T.Sugiura
  • Organizer: 30th Intern.Conf.Physics of Semiconductors (ICPS2010)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2010-07-29
• [Presentation] Effect of lateral vapor-phase diffusion in the selective MOVPE of InGaN/GaN MQW on GaN microfacet structure (2010)
  • Author(s): T.Tanikawa
  • Organizer: 29th Electronic Materials Symposium (EMS2010)
  • Place of Presentation: Shuzenji, Japan
  • Year and Date: 2010-07-14
• [Presentation] HVPE growth of ultraviolet light emission double-heterostructure (2010)
  • Author(s): H.S.Jeon
  • Organizer: Intern.Conf.on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] Growth of SAG Double-Hetero Structure on GaN Substrate Using by HVPE (2010)
  • Author(s): H.S.Jeon
  • Organizer: Intern.Conf.on Growth of III-Nitrides (ISGN-3)
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-05
• [Presentation] 加工シリコン基板上への窒化物半導体選択ヘテロエピタキシ (2010)
  • Author(s): 澤木宣彦
  • Organizer: 仙台結晶成長学会バルク結晶分科会研究会
  • Place of Presentation: 東北大学、仙台市
  • Year and Date: 2010-06-18
• [Presentation] Nitride LEDs on Si substrate (2010)
  • Author(s): N.Sawaki
  • Organizer: ISSLED-8
  • Place of Presentation: Beijing、China
  • Year and Date: 2010-05-20
• [Book] Integration with silicon based microelectronics (2011)
  • Author(s): J.Li, J.Y.Lin, H.X.Jiang, and N.Sawaki, CRC Press (Taylor & Francis Group)
  • Total Pages: 593
  • Publisher: III-V compound semiconductors;
• [Book] III-V compound semiconductors ; Integration with silicon based microelectronics (2011)
  • Author(s): T.Li
  • Total Pages: 593
  • Publisher: CRC Press (Taylor & Francis Group)
• [Remarks] 愛知工業大学研究報告
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• [Remarks]
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• [Remarks]
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