Highly spin polarized quantum dots with long spin relaxation time for future circularly polarized light emitting diodes
Project/Area Number |
22360032
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied optics/Quantum optical engineering
|
Research Institution | Waseda University |
Principal Investigator |
|
Project Period (FY) |
2010 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥20,150,000 (Direct Cost: ¥15,500,000、Indirect Cost: ¥4,650,000)
Fiscal Year 2012: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2011: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2010: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
|
Keywords | 光制御 / スピントロニクス / 量子ドット / 円偏光 / フォトルミネッセンス / 発光ダイオード / 半導体 / 薄膜・量子構造 / 光物件 / エピタキシャル成長 / 光物性 / エじタキシャル成長 |
Research Abstract |
For the realization of the circularly polarized light emitting diode, spin polarizations and spin relaxation times of some III-V compound semiconductors were investigated. InAs columnar quantum dots showed 3.42 ns-spin relaxation at 1.06 micron meter. The highly uniform InAs quantum dots exhibited the stable eliptical polarization caused by the in-plane anisostropies of the dot shape and strain distribution. Highly Si doped GaInP showed 210 ns-spin relaxation which is one of the longest spin relaxations ever observed.
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Report
(4 results)
Research Products
(72 results)