Nano-capacitor fabrication process development by using supercritical fluid
Project/Area Number |
22360329
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Reaction engineering/Process system
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
MOMOSE Takeshi 東京大学, 大学院・工学系研究科, 助教 (10611163)
|
Project Period (FY) |
2010 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
Fiscal Year 2012: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2011: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2010: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
|
Keywords | 超臨界流体 / 薄膜合成 / プロセス開発 / DRAM / FeRAM / 電極 / 高誘電体 / 強 誘電体 / 超臨界流体薄膜合成 / 強誘電体 / ナノキャパシタ / 電極形成 / SrRuO3 / SrTiO3 / BiTiO3 / 超臨界 / 電極金属 / ステップカバレッジ / メモリーデバイス / 薄膜形成 / 金属・酸化膜積層構造形成 |
Research Abstract |
Process for nano-capacitors to be used in DRAMs and FeRAMs using supercritical CO2 (scCO2) was developed. Organic metal compounds were dissolved into scCO2 and reacted to form thin films on a heated substrate. This process, Supercritical Fluid Deposition, SCFD, was used to deposit Ru, Pt, and SrRuO3 as an electrode. TiO2, SrTiO3, and BiTiO3 were also deposited as a high-dielectric constant material and ferroelectric material. The developed processes showed excellent step coverage like as the conventional processes of CVD/ALD with lower deposition temperature.
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Report
(4 results)
Research Products
(18 results)