| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Research Abstract |
Thermochemical design of the solution formulation, electrochemical heteroepitaxial growth, and diode structure for the photovoltaic device have been investigated for electrochemically constructing the 1.3-eV -bandgap-p-CuO/n-ZnO photovoltaic devices with the theoretical conversion efficiency around 28%. The electrodeposited -oriented CuO diode with Si-O buffer and n-ZnO layers revealed an excellent rectification feature in-dark and phovoltaic performance with the open-circuit voltage of 0.43V.
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