Study of photoconductivity of Ga-doped ZnO thin films

Research Project

Project/Area Number	22560027
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Single-year Grants
Section	一般
Research Field	Thin film/Surface and interfacial physical properties
Research Institution	Kochi National College of Technology
Principal Investigator	KISHIMOTO Seiichi 高知工業高等専門学校, 機械工学科, 教授 (90177816)
Project Period (FY)	2010 – 2012
Project Status	Completed (Fiscal Year 2012)
Budget Amount *help	¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000) Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000) Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000) Fiscal Year 2010: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Keywords	酸化亜鉛 / 薄膜 / 光伝導度 / 紫外線 / 多結晶薄膜 / GZO膜
Research Abstract	Ga doped ZnO thin films and undoped ZnO thin films were evaluated from the out-of-plane XRD measurement, Hall-effect measurement, photo-absorption measurement, and photoconductivity measurement. Improvement of crystallinity improves the response of the optical conductivity, and increase the photoconductivity.

Report

(4 results)