Study on low temperature thin film formation method by controlling chemical bonds on solid surface
| Project/Area Number |
22560713
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Yokohama National University |
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Principal Investigator |
HABUKA Hitoshi 横浜国立大学, 大学院・工学研究院, 教授 (40323927)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 材料合成プロセス / 炭化珪素 / 表面活性化 / 低温薄膜形成 |
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| Research Abstract |
In order to prepare the chemically active surface, we performed various methods, such as (1) the formation of thin silicon film, (2) plasma etching of silicon surface (removing native oxide and organic contamination). The silicon carbide thin film was formed using monomethylsilane gas on such the active surface with surveying its optimum condition. Based on the results, the silicon carbide thin film formation was tried on surfaces of aluminum, stainless steel and polyimide.
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Report
(4 results)
Research Products
(29 results)
